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Register a new userElectrical Tuning of Fresnel Lens in Reflection
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Added by
Christopher Damgaard-Carstensen
Publication date
2021
fields
Physics
and research's language is
English
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Optical metasurfaces have been extensively investigated, demonstrating diverse and multiple functionalities with complete control over the transmitted and reflected fields. Most optical metasurfaces are however static, with only a few configurations offering (rather limited) electrical control, thereby jeopardizing their application prospects in emerging flat optics technologies. Here, we suggest an approach to realize electrically tunable optical metasurfaces, demonstrating dynamic Fresnel lens focusing. The active Fresnel lens (AFL) exploits the electro-optic Pockels effect in a 300-nm-thick lithium niobate layer sandwiched between a continuous thick and nanostructured gold film serving as electrodes. We fabricate and characterize the AFL, focusing 800-900 nm radiation at the distance of 40 $mathrm{mu}$m with the focusing efficiency of 15 % and demonstrating the modulation depth of 1.5 % with the driving voltage of $pm 10$ V within the bandwidth of $sim! 4$ MHz. We believe that the electro-optic metasurface concept introduced is useful for designing dynamic flat optics components.
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When a monochromatic electromagnetic plane-wave arrives at the flat interface between its transparent host (i.e., the incidence medium) and an amplifying (or gainy) second medium, the incident beam splits into a reflected wave and a transmitted wave. In general, there is a sign ambiguity in connection with the k-vector of the transmitted beam, which requires at the outset that one decide whether the transmitted beam should grow or decay as it recedes from the interface. The question has been posed and addressed most prominently in the context of incidence at large angles from a dielectric medium of high refractive index onto a gain medium of lower refractive index. Here, the relevant sign of the transmitted k-vector determines whether the evanescent-like waves within the gain medium exponentially grow or decay away from the interface. We examine this and related problems in a more general setting, where the incident beam is taken to be a finite-duration wavepacket whose footprint in the interfacial plane has a finite width. Cases of reflection from and transmission through a gainy slab of finite-thickness as well as those associated with a semi-infinite gain medium will be considered. The broadness of the spatio-temporal spectrum of our incident wavepacket demands that we develop a general strategy for deciding the signs of all the k-vectors that enter the gain medium. Such a strategy emerges from a consideration of the causality constraint that is naturally imposed on both the reflected and transmitted wavepackets.
Group-IV color centers in diamond have attracted significant attention as solid-state spin qubits because of their excellent optical and spin properties. Among these color centers, the tin-vacancy (SnV$^{,textrm{-}}$) center is of particular interest because its large ground-state splitting enables long spin coherence times at temperatures above 1$,$K. However, color centers typically suffer from inhomogeneous broadening, which can be exacerbated by nanofabrication-induced strain, hindering the implementation of quantum nodes emitting indistinguishable photons. Although strain and Raman tuning have been investigated as promising techniques to overcome the spectral mismatch between distinct group-IV color centers, other approaches need to be explored to find methods that can offer more localized control without sacrificing emission intensity. Here, we study electrical tuning of SnV$^{,textrm{-}}$ centers in diamond via the direct-current Stark effect. We demonstrate a tuning range beyond 1.7$,$GHz. We observe both quadratic and linear dependence on the applied electric field. We also confirm that the tuning effect we observe is a result of the applied electric field and is distinct from thermal tuning due to Joule heating. Stark tuning is a promising avenue toward overcoming detunings between emitters and enabling the realization of multiple identical quantum nodes.
The conventional lenss tunability drawback always restricts their application compared to the metasurface lens (metalens). On the other side, reconfigurable metalenses offer the benefits of ultrathin thickness and capable of tunability. Therefore achieving reconfigurable functionalities in a single metasurface has attracted significant research interest for potential terahertz (THz) applications. In this paper, an adjustable metasurface is presented using Vanadium dioxide (VO2) to manipulate the electromagnetic waves and provide the full reflection phase. The phase-change metasurface is composed of a VO2 nanofilm, a silicon spacer, and a gold layer embedded in the structures bottom. By employing the reconfigurable metasurface with the specific phase distribution, the incident beam can converge to determined points in any arbitrary manner, including the number of the focal points, focal points location, and power intensity ratio. Numerical simulations demonstrate that the proposed reconfigurable metasurface can concentrate power on one or more than one focal point in reflection modes as expected. Additionally, the VO2-based metasurface can control concentration width in a real-time manner using a novel proposed method. The simulation and theoretical results are in good agreement to verify the validity and feasibility of 2-bit metalens design, which has considerable potential in wireless high-speed communication and super-resolution imaging.
Hybrid dielectric metasurfaces have emerged as a promising approach to enhancing near field confinement and thus achieving high optical nonlinearity using low loss dielectrics. Additional flexibility in design and fabrication of hybrid metasurfaces allows dynamic control of light, which is value-added for a wider range of applications. Here, we demonstrate a tunable and efficient third harmonic generation (THG) via hybrid metasurfaces with phase change material Ge2Sb2Te5 (GST) deposited on top of amorphous silicon nanostructutes. Fano resonance is excited to confine the incident light inside the hybrid metasurfaces, and an experimental quality factor ($Q$-factor) of 125 is achieved at the fundamental pump wavelength around 1210 nm. We demonstrate the switching between a turn-on state of Fano resonance in the amorphous state of GST and a turn-off state in its crystalline state and also gradual multistate tuning of THG emission at its intermediate state. We achieve a high THG conversion efficiency of ${eta} = 2.9*10^{-6}$ %, which is more than ~32 times of that of a GST-based Fabry-P`erot cavity under a similar pump laser power, thanks to the enhanced field confinement due to the Fano resonance. Our results show the strong potential of GST-based hybrid dielectric metasurfaces for efficient and tunable nonlinear optical devices.
Layered two-dimensional (2D) materials provide a wide range of unique properties as compared to their bulk counterpart, making them ideal for heterogeneous integration for on-chip interconnects. Hence, a detailed understanding of the loss and index change on Si integrated platform is a prerequisite for advances in opto-electronic devices impacting optical communication technology, signal processing, and possibly photonic-based computing. Here, we present an experimental guide to characterize transition metal dichalcogenides (TMDs), once monolithically integrated into the Silicon photonic platform at 1.55 um wavelength. We describe the passive tunable coupling effect of the resonator in terms of loss induced as a function of 2D material layer coverage length and thickness. Further, we demonstrate a TMD-ring based hybrid platform as a refractive index sensor where resonance shift has been mapped out as a function of flakes thickness which correlates well with our simulated data. These experimental findings on passive TMD-Si hybrid platform open up a new dimension by controlling the effective change in loss and index, which may lead to the potential application of 2D material based active on chip photonics.
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