No Arabic abstract
Controlling thermal transport is important for a range of devices and technologies, from phase change memories to next-generation electronics. This is especially true in nano-scale devices where thermal transport is altered by the influence of surfaces and changes in dimensionality. In superconducting nanowire single-photon detectors, the thermal boundary conductance (TBC) between the nanowire and the substrate it is fabricated on influences most of the performance metrics that make these detectors attractive for applications. This includes the maximum count rate, latency, jitter, and quantum efficiency. Despite its importance, the study of TBC in superconducting nanowire devices has not been done systematically, primarily due to the lack of a straightforward characterization method. Here, we show that simple electrical measurements can be used to estimate the TBC between nanowires and substrates and that these measurements match acoustic mismatch theory across a variety of substrates. Numerical simulations allow us to refine our understanding, however, open questions remain. This work should enable thermal engineering in superconducting nanowire electronics and cryogenic detectors for improved device performance.
Intrinsic Josephson junctions in high-temperature superconductor Bi2Sr2CaCu2O8 are known for their capability to emit high-power terahertz photons with widely tunable frequencies. Hotspots, as inhomogeneous temperature distributions across the junctions, are believed to play a critical role in synchronizing the gauge-invariant phase difference among the junctions, so as to achieve coherent strong emission. Previous optical imaging techniques have indirectly suggested that the hotspot temperature can go higher than the superconductor critical temperature. However, such optical approaches often disturb the local temperature profile and are too slow for device applications. In this paper, we demonstrate an on-chip in situ sensing technique that can precisely quantify the local temperature profile. This is achieved by fabricating a series of micro sensor junctions on top of an emitter junction and measuring the critical current on the sensors versus the bias current applied to the emitter. This fully electronic on-chip design could enable efficient close-loop control of hotspots in BSCCO junctions and significantly enhance the functionality of superconducting terahertz emitters.
We have fabricated disordered superconducting nanowires of molybdenium silicide. A molybdenium nanowire is first deposited on top of silicon, and the alloy is formed by rapid thermal annealing. The method allows tuning of the crystal growth to optimise, e.g., the resistivity of the alloy for potential applications in quantum phase slip devices and superconducting nanowire single-photon detectors. The wires have effective diameters from 42 to 79 nm, enabling the observation of crossover from conventional superconductivity to regimes affected by thermal and quantum fluctuations. In the smallest diameter wire and at temperatures well below the superconducting critical temperature, we observe residual resistance and negative magnetoresistance, which can be considered as fingerprints of quantum phase slips.
We have used a neon focused-ion-beam to fabricate both nanoscale Nb Dayem bridges and NbN phase-slip nanowires located at the short-circuited end of quarter-wavelength coplanar waveguide resonators. The Dayem bridge devices show flux-tunability and intrinsic quality factor exceeding 10,000 at 300 mK up to local fields of at least 60 mT. The NbN nanowires show signatures of incoherent quantum tunnelling of flux at 300 mK.
We study the microwave impedance of extremely high aspect ratio (length/width ~ 5,000) superconducting niobium nitride nanowires. The nanowires are fabricated in a compact meander geometry that is in series with the center conductor of a 50 ohm coplanar waveguide transmission line. The transmission coefficient of the sample is measured up to 20 GHz. At high frequency, a peak in the transmission coefficient is seen. Numerical simulations show that this is a half-wave resonance along the length of the nanowire, where the nanowire acts as a high impedance, slow wave transmission line. This resonance sets the upper frequency limit for these nanowires as inductive elements. Fitting simulations to the measured resonance enables a precise determination of the nanowires complex sheet impedance at the resonance frequency. The real part is a measure of dissipation, while the imaginary part is dominated by kinetic inductance. We characterize the dependence of the sheet resistance and sheet inductance on both temperature and current and compare the results to recent theoretical predictions for disordered superconductors. These results can aid in the understanding of high frequency devices based on superconducting nanowires. They may also lead to the development of novel superconducting devices such as ultra-compact resonators and slow-wave structures.
We have measured the resistance vs. temperature of more than 20 superconducting nanowires with nominal widths ranging from 10 to 22 nm and lengths from 100 nm to 1050 nm. With decreasing cross-sectional areas, the wires display increasingly broad resistive transitions. The data are in very good agreement with a model that includes both thermally activated phase slips close to Tc and quantum phase slips (QPS) at low temperatures, but disagree with an earlier model based on a critical value of R_n/Rq. Our measurements provide strong evidence for QPS in thin superconducting wires.