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Imaging the Neel vector switching in the monolayer antiferromagnet MnPSe$_3$ with strain-controlled Ising order

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 Added by Zhuoliang Ni
 Publication date 2021
  fields Physics
and research's language is English




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The family of monolayer two-dimensional (2D) materials hosts a wide range of interesting phenomena, including superconductivity, charge density waves, topological states and ferromagnetism, but direct evidence for antiferromagnetism in the monolayer has been lacking. Nevertheless, antiferromagnets have attracted enormous interest recently in spintronics due to the absence of stray fields and their terahertz resonant frequency. Despite the great advantages of antiferromagnetic spintronics, controlling and detecting Neel vectors have been limited in bulk materials. In this work, we developed a sensitive second harmonic generation (SHG) microscope and detected long-range Neel antiferromagnetic (AFM) order and Neel vector switching down to the monolayer in MnPSe$_3$. Temperature-dependent SHG measurement in repetitive thermal cooling surprisingly collapses into two curves, which correspond to the switching of an Ising type Neel vector reversed by the time-reversal operation, instead of a six-state clock ground state expected from the threefold rotation symmetry in the structure. We imaged the spatial distribution of the Neel vectors across samples and rotated them by an arbitrary angle irrespective of the lattice in the sample plane by applying strain. By studying both a Landau theory and a microscopic model that couples strain to nearest-neighbor exchange, we conclude that the phase transition of the XY model in the presence of strain falls into the Ising universality class instead of the XY one, which could explain the extreme strain tunability. Finally, we found that the 180{deg} AFM domain walls are highly mobile down to the monolayer after thermal cycles, paving the way for future control of the antiferromagnetic domains by strain or external fields on demand for ultra-compact 2D AFM terahertz spintronics.



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245 - V. Saidl , P. Nemec , P. Wadley 2016
Recent breakthroughs in electrical detection and manipulation of antiferromagnets have opened a new avenue in the research of non-volatile spintronic devices. Antiparallel spin sublattices in antiferromagnets, producing zero dipolar fields, lead to the insensitivity to magnetic field perturbations, multi-level stability, ultra-fast spin dynamics and other favorable characteristics which may find utility in fields ranging from magnetic memories to optical signal processing. However, the absence of a net magnetic moment and the ultra-short magnetization dynamics timescales make antiferromagnets notoriously difficult to study by common magnetometers or magnetic resonance techniques. In this paper we demonstrate the experimental determination of the Neel vector in a thin film of antiferromagnetic CuMnAs which is the prominent material used in the first realization of antiferromagnetic memory chips. We employ a femtosecond pump-probe magneto-optical experiment based on magnetic linear dichroism. This table-top optical method is considerably more accessible than the traditionally employed large scale facility techniques like neutron diffraction and X-ray magnetic dichroism measurements. This optical technique allows an unambiguous direct determination of the Neel vector orientation in thin antiferromagnetic films utilized in devices directly from measured data without fitting to a theoretical model.
Metallic antiferromagnets with broken inversion symmetry on the two sublattices, strong spin-orbit coupling and high N{e}el temperatures offer new opportunities for applications in spintronics. Especially Mn$_{2}$Au, with high N{e}el temperature and conductivity, is particularly interesting for real-world applications. Here, manipulation of the orientation of the staggered magnetization,textit{ i.e.} the N{e}el vector, by current pulses has been recently demonstrated, with the read-out limited to studies of anisotropic magnetoresistance or X-ray magnetic linear dichroism. Here, we report on the in-plane reflectivity anisotropy of Mn$_{2}$Au (001) films, which were N{e}el vector aligned in pulsed magnetic fields. In the near-infrared, the anisotropy is $approx$ 0.6%, with higher reflectivity for the light polarized along the N{e}el vector. The observed magnetic linear dichroism is about four times larger than the anisotropic magnetoresistance. This suggests the dichroism in Mn$_{2}$Au is a result of the strong spin-orbit interactions giving rise to anisotropy of interband optical transitions, in-line with recent studies of electronic band-structure. The considerable magnetic linear dichroism in the near-infrared could be used for ultrafast optical read-out of the N{e}el vector in Mn$_{2}$Au.
72 - T. H. Kim , S. Hwang , S. Y. Hamh 2021
We suggest coherent switching of canted antiferromagnetic (AFM) spins using spin-orbit torque (SOT) in small magnet. The magnetic system of orthoferrite features biaxial easy anisotropy and the Dzyaloshinskii Moriya interaction, which is perpendicular to the easy axes and therefore creates weak magnetization (m). A damping-like component of the SOT induces Neel reorientation along one of the easy axes and then exerts torque on m, leading to tilting of the Neel order l. The torque on the magnetization becomes stronger due to coupling with the induced Oersted field or the field-like component of the SOT, enhancing the tilting of l. Therefore, l is found to experience deterministic switching after the SOT is turned off. Based upon both numerical and analytical analysis of the coherent switching, XOR logic gates are also found to be implemented in a single magnetic layer. In addition, we investigate how magnetic parameters affect the critical reorientation angle and current density in a simple layered structure of platinum and a canted AFM. Our findings are expected to provide an alternative spin-switching mechanism for ultrafast applications such as spin logic and electronic devices.
We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.
Electrical detection of the 180 deg spin reversal, which is the basis of the operation of ferromagnetic memories, is among the outstanding challenges in the research of antiferromagnetic spintronics. Analogous effects to the ferromagnetic giant or tunneling magnetoresistance have not yet been realized in antiferromagnetic multilayers. Anomalous Hall effect (AHE), which has been recently employed for spin reversal detection in non-collinear antiferromagnets, is limited to materials that crystalize in ferromagnetic symmetry groups. Here we demonstrate electrical detection of the 180 deg Neel vector reversal in CuMnAs which comprises two collinear spin sublattices and belongs to an antiferromagnetic symmetry group with no net magnetic moment. We detect the spin reversal by measuring a second-order magnetotransport coefficient whose presence is allowed in systems with broken space inversion symmetry. The phenomenology of the non-linear transport effect we observe in CuMnAs is consistent with a microscopic scenario combining anisotropic magneto-resistance (AMR) with a transient tilt of the Neel vector due to a current-induced, staggered spin-orbit field. We use the same staggered spin-orbit field, but of a higher amplitude, for the electrical switching between reversed antiferromagnetic states which are stable and show no sign of decay over 25 hour probing times.
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