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Register a new userModulation of Charge Transport at Grain Boundaries in SrTiO3: Toward a High Thermoelectric Power Factor at Room Temperature
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Modulation of the grain boundary properties in thermoelectric materials that have thermally activated electrical conductivity is crucial in order to achieve high performance at low temperatures. In this work, we show directly that the modulation of the potential barrier at the grain boundaries in perovskite SrTiO3 changes the low-temperature dependency of the bulk materials electrical conductivity. By sintering samples in a reducing environment of increasing strength, we produced La0.08Sr0.9TiO3 (LSTO) ceramics that gradually change their electrical conductivity behavior from thermally activated to single-crystal-like, with only minor variations in the Seebeck coefficient. Imaging of the surface potential by Kelvin probe force microscopy found lower potential barriers at the grain boundaries in the LSTO samples that had been processed in the more reducing environments. A theoretical model using the band offset at the grain boundary to represent the potential barrier agreed well with the measured grain boundary potential dependency of conductivity. The present work showed an order of magnitude enhancement in electrical conductivity (from 85 to 1287 S cm-1) and power factor (from 143 to 1745 {mu}W m-1 K-2) at 330 K by this modulation of charge transport at grain boundaries. This significant reduction in the impact of grain boundaries on charge transport in SrTiO3 provides an opportunity to achieve the ultimate phonon glass electron crystal by appropriate experimental design and processing.
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A d-orbital electron has an anisotropic electron orbital and is a source of magnetism. The realization of a 2-dimensional electron gas (2DEG) embedded at a LaAlO3/SrTiO3 interface surprised researchers in materials and physical sciences because the 2DEG consists of 3d-electrons of Ti with extraordinarily large carrier mobility, even in the insulating oxide heterostructure. To date, a wide variety of physical phenomena, such as ferromagnetism and the quantum Hall effect, have been discovered in this 2DEG systems, demonstrating the ability of the d-electron 2DEG systems to provide a material platform for the study of interesting physics. However, because of both ferromagnetism and the Rashba field, long-range spin transport and the exploitation of spintronics functions have been believed difficult to implement in the d-electron 2DEG systems. Here, we report the experimental demonstration of room-temperature spin transport in the d-electron-based 2DEG at a LaAlO3/SrTiO3 interface, where the spin relaxation length is ca. exceeding 200 nm. Our finding, which counters the conventional understandings to d-electron 2DEGs, opens a new field of d-electron spintronics. Furthermore, this work highlights a novel spin function in the conductive oxide system.
Two-dimensional electron gas (2DEG) formed at the interface between SrTiO3 (STO) and LaAlO3 (LAO) insulating layer is supposed to possess strong Rashba spin-orbit coupling. To date, the inverse Edelstein effect (i.e. spin-to-charge conversion) in the 2DEG layer is reported. However, the direct effect of charge-to-spin conversion, an essential ingredient for spintronic devices in a current induced spin-orbit torque scheme, has not been demonstrated yet. Here we show, for the first time, a highly efficient spin generation with the efficiency of ~6.3 in the STO/LAO/CoFeB structure at room temperature by using spin torque ferromagnetic resonance. In addition, we suggest that the spin transmission through the LAO layer at high temperature range is attributed to the inelastic tunneling via localized states in the LAO band gap. Our findings may lead to potential applications in the oxide insulator based spintronic devices.
We describe measurements of 100 nK temperature oscillations at room temperature, driven at the complex interface between p-doped Germanium, a nm size metal layer, and an electrolyte. We show that heat is deposited at this interface by thermoelectric effects, however the precise microscopic mechanism remains to be established. The temperature measurement is accomplished by observing the modulation of black body radiation from the interface. We argue that this geometry offers a method to study molecular scale dissipation phenomena. The Debye layer on the electrolyte side of the interface controls much of the dynamics. Interpreting the measurements from first principles, we show that in this geometry the Debye layer behaves like a low frequency transmission line.
Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.
Flexoelectricity is a type of ubiquitous and prominent electromechanical coupling, pertaining to the response of electrical polarization to mechanical strain gradients while not restricted to the symmetry of materials. However, large elastic deformation in most solids is usually difficult to achieve and the strain gradient at minuscule is challenging to control. Here we exploit the exotic structural inhomogeneity of grain boundary to achieve a huge strain gradient (~ 1.2 nm-1) within 3 ~ 4 unit-cells, and thus obtain atomic-scale flexoelectric polarization up to ~ 38 {mu}C/cm2 at a 24 LaAlO3 grain boundary. The nanoscale flexoelectricity also modifies the electrical activity of grain boundaries. Moreover, we prove that it is a general and feasible way to form large strain gradients at atomic scale by altering the misorientation angles of grain boundaries in different dielectric materials. Thus, engineering of grain boundaries provides an effective pathway to achieve tunable flexoelectricity and broadens the electromechanical functionalities of non-piezoelectric materials.
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