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Photoinduced Transient States of Antiferromagnetic Orderings in La${}_{1/3}$Sr${}_{2/3}$FeO${}_{3}$ and SrFeO${}_{3}$ Thin Films Observed through Time-resolved Resonant Soft X-ray Scattering

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 Added by Kohei Yamamoto
 Publication date 2021
  fields Physics
and research's language is English




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The relationship between the magnetic interaction and photoinduced dynamics in antiferromagnetic perovskites is investigated in this study. In La${}_{1/3}$Sr${}_{2/3}$FeO${}_{3}$ thin films, commensurate spin ordering is accompanied by charge disproportionation, whereas SrFeO${}_{3}$ thin films show incommensurate helical antiferromagnetic spin ordering due to increased ferromagnetic coupling compared to La${}_{1/3}$Sr${}_{2/3}$FeO${}_{3}$. To understand the photoinduced spin dynamics in these materials, we investigate the spin ordering through time-resolved resonant soft X-ray scattering. In La${}_{1/3}$Sr${}_{2/3}$FeO${}_{3}$, ultrafast quenching of the magnetic ordering within 130 fs through a nonthermal process is observed, triggered by charge transfer between the Fe atoms. We compare this to the photoinduced dynamics of the helical magnetic ordering of SrFeO${}_{3}$. We find that the change in the magnetic coupling through optically induced charge transfer can offer an even more efficient channel for spin-order manipulation.



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72 - J. Klein 2002
Due to the complex interplay of magnetic, structural, electronic, and orbital degrees of freedom, biaxial strain is known to play an essential role in the doped manganites. For coherently strained La(2/3)Ca(1/3)MnO(3) thin films grown on SrTiO(3) substrates, we measured the magnetotransport properties both parallel and perpendicular to the substrate and found an anomaly of the electrical transport properties. Whereas metallic behavior is found within the plane of biaxial strain, for transport perpendicular to this plane an insulating behavior and non-linear current-voltage characteristics (IVCs) are observed. The most natural explanation of this anisotropy is a strain induced transition from an orbitally disordered ferromagnetic state to an orbitally ordered state associated with antiferromagnetic stacking of ferromagnetic manganese oxide planes.
Polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ (LSMO) thin films were synthesized by pulsed laser ablation on single crystal (100) yttria-stabilized zirconia (YSZ) substrates to investigate the mechanism of magneto-transport in a granular manganite. Different degrees of granularity is achieved by using the deposition temperature (T$_{D}$) of 700 and 800 $^{0}$C. Although no significant change in magnetic order temperature (T$_C$) and saturation magnetization is seen for these two types of films, the temperature and magnetic field dependence of their resistivity ($rho$(T, H)) is strikingly dissimilar. While the $rho$(T,H) of the 800 $^{0}$C film is comparable to that of epitaxial samples, the lower growth temperature leads to a material which undergoes insulator-to-metal transition at a temperature (T$_{P}$ $approx$ 170 K) much lower than T$_C$. At T $ll$ T$_P$, the resistivity is characterized by a minimum followed by ln $emph{T}$ divergence at still lower temperatures. The high negative magnetoresistance ($approx$ 20$%$) and ln $emph{T}$ dependence below the minimum are explained on the basis of Kondo-type scattering from blocked Mn-spins in the intergranular material. Further, a striking feature of the T$_D$ = 700 $^{0}$C film is its two orders of magnitude larger anisotropic magnetoresistance (AMR) as compared to the AMR of epitaxial films. We attribute it to unquenching of the orbital angular momentum of 3d electrons of Mn ions in the intergranular region where crystal field is poorly defined.
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We have measured the contribution of magnetic domain walls (DWs) to the electric resistance in epitaxial manganite films patterned by electron-beam lithography into a track containing a set of notches. We find a DW resistance-area (RA) product of ~2.5 10^(-13) Ohm/m^2 at low temperature and bias, which is several orders of magnitude larger than the values reported for 3d ferromagnets. However, the current-voltage characteristics are highly linear which indicates that the DWs are not phase separated but metallic. The DWRA is found to increase upon increasing the injected current, presumably reflecting some deformation of the wall by spin-transfer. When increasing temperature, the DWRA vanishes at ~225K which is likely related to the temperature dependence of the film anisotropy.
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