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Register a new userSwitching magnon chirality in artificial antiferromagnet
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Magnons in antiferromagnets can support both right-handed and left-handed chiralities, which shed a light on the chirality-based spintronics. Here we demonstrate the switching and reading of magnon chirality in an artificial antiferromagnet. The coexisting antiferromagnetic and ferromagnetic characteristic resonance modes are discovered, which permits a high tunability in the modulation of magnon chirality. The reading of the chirality is accomplished via the chirality-dependent spin pumping as well as spin rectification effect. Our result illustrates an ideal antiferromagnetic platform for handling magnon chirality and paves the way for chirality-based spintronics.
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Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microscopic imaging of aniferromagnetic domains is one of the key prerequisites for understading physical principles of the device operation. However, adapting common magnetometry techniques to the dipolar-field-free antiferromagnets has been a major challenge. Here we demonstrate in a collinear antiferromagnet a thermoelectric detection method by combining the magneto-Seebeck effect with local heat gradients generated by scanning far-field or near-field techniques. In a 20 nm epilayer of uniaxial CuMnAs we observe reversible 180 deg switching of the Neel vector via domain wall displacement, controlled by the polarity of the current pulses. We also image polarity-dependent 90 deg switching of the Neel vector in a thicker biaxial film, and domain shattering induced at higher pulse amplitudes. The antiferromagnetic domain maps obtained by our laboratory technique are compared to measurements by the established synchrotron microscopy using X-ray magnetic linear dichroism.
In the development of spin-based electronic devices, a particular challenge is the manipulation of the magnetic state with high speed and low power consumption. Although research has focused on the current-induced spin-orbit torque based on strong spin-orbit coupling, the charge-based and the torque-driven devices have fundamental limitations: Joule heating, phase mismatching and overshooting. In this work, we investigate numerically and theoretically alternative switching scenario of antiferromagnetic insulator in one-dimensional confined nanowire sandwiched with two electrodes. As the electric field could break inversion symmetry and induce Dzyaloshinskii-Moriya interaction and pseudo-dipole anisotropy, the resulting spiral texture takes symmetric or antisymmetric configuration due to additional coupling with the crystalline anisotropy. Therefore, by competing two spiral states, we show that the magnetization reversal of antiferromagnets is realized, which is valid in ferromagnetic counterpart. Our finding provides promising opportunities to realize the rapid and energy-efficient electrical manipulation of magnetization for future spin-based electronic devices.
Since the first experimental observation of all-optical switching phenomena, intensive research has been focused on finding suitable magnetic systems that can be integrated as storage elements within spintronic devices and whose magnetization can be controlled through ultra-short single laser pulses. We report here atomistic spin simulations of all-optical switching in multilayered structures alternating n monolayers of Tb and m monolayers of Co. By using a two temperature model, we numerically calculate the thermal variation of the magnetization of each sublattice as well as the magnetization dynamics of [Tbn/Com] multilayers upon incidence of a single laser pulse. In particular, the condition to observe thermally-induced magnetization switching is investigated upon varying systematically both the composition of the sample (n,m) and the laser fluence. The samples with one monolayer of Tb as [Tb1/Co2] and [Tb1/Co3] are showing thermally induced magnetization switching above a fluence threshold. The reversal mechanism is mediated by the residual magnetization of the Tb lattice while the Co is fully demagnetized in agreement with the models developed for ferrimagnetic alloys. The switching is however not fully deterministic but the error rate can be tuned by the damping parameter. Increasing the number of monolayers the switching becomes completely stochastic. The intermixing at the Tb/Co interfaces appears to be a promising way to reduce the stochasticity. These results predict for the first time the possibility of TIMS in [Tb/Co] multilayers and suggest the occurrence of sub-picosecond magnetization reversal using single laser pulses.
The concept of a nano-actuator that uses ferroelectric switching to generate enhanced displacements is explored using a phase-field model. The actuator has a ground state in the absence of applied electric field that consists of polarized domains oriented to form a flux closure. When electric field is applied, the polarization reorients through ferroelectric switching and produces strain. The device is mechanically biased by a substrate and returns to the ground state when electric field is removed, giving a repeatable actuation cycle. The mechanical strains which accompany ferroelectric switching are several times greater than the strains attained due to the piezoelectric effect alone. We also demonstrate a second design of actuator in which the displacements are further increased by the bending of a ferroelectric beam. Phase-field modelling is used to track the evolution of domain patterns in the devices during the actuation cycle, and to study the design parameters so as to enhance the achievable actuation strains.
We developed a capacitor type heat flow switching device, in which electron thermal conductivity of the electrodes is actively controlled through the carrier concentration varied by an applied bias voltage. The devices consist of an amorphous p-type Si-Ge-Au alloy layer, an amorphous SiO$_2$ as the dielectric layer, and a n-type Si substrate. Both amorphous materials are characterized by very low lattice thermal conductivity, less than 1 Wm-1K-1. The Si-Ge-Au amorphous layer with 40 nm in thickness was deposited by means of molecular beam deposition technique on the 100 nm thick SiO$_2$ layer formed at the top surface of Si substrate. Bias voltage-dependent thermal conductivity and heat flow density of the fabricated device were evaluated by a time-domain thermoreflectance method at room temperature. Consequently, we observed a 55 percent increase in thermal conductivity.
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