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Register a new userElectronic subbands in the a-LaAlO$_3$/KTaO$_3$ interface revealed by quantum oscillations in high magnetic fields
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Investigating Shubnikov-de Haas (SdH) oscillations in high magnetic fields, we experimentally infer the electronic band structure of the quasi-two-dimensional electron gas (2DEG) at the ionic-liquid gated amorphous (a)-LaAlO$_3$/KTaO$_3$ interface. The angular dependence of SdH oscillations indicates a 2D confinement of a majority of electrons at the interface. However, additional SdH oscillations with an angle-independent frequency observed at high tilt angles indicate the coexistence of 3D charge carriers extending deep into the KTaO$_3$. The SdH oscillations measured in magnetic fields perpendicular to the interface show four frequencies corresponding to four 2D subbands with different effective masses (0.20 $m_e$ - 0.55 $m_e$). The single-frequency oscillations originating from 3D electrons yields a larger effective mass of $sim$ 0.70 $m_e$. Overall, the inferred subbands are in good agreement with the theoretical-calculations and angle-resolved photoemission spectroscopy studies on 2DEG at KTaO$_3$ surface.
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We have investigated the illumination effect on the magnetotransport properties of a two-dimensional electron system at the LaAlO$_3$/SrTiO$_3$ interface. The illumination significantly reduces the zero-field sheet resistance, eliminates the Kondo effect at low-temperature, and switches the negative magnetoresistance into the positive one. A large increase in the density of high-mobility carriers after illumination leads to quantum oscillations in the magnetoresistance originating from the Landau quantization. The carrier density ($sim 2 times 10^{12}$ cm$^{-2}$) and effective mass ($sim 1.7 ~m_e$) estimated from the oscillations suggest that the high-mobility electrons occupy the d$_{xz/yz}$ subbands of Ti:t$_{2g}$ orbital extending deep within the conducting sheet of SrTiO$_3$. Our results demonstrate that the illumination which induces additional carriers at the interface can pave the way to control the Kondo-like scattering and study the quantum transport in the complex oxide heterostructures.
We investigated the electronic structure of the SrTiO$_3$/LaAlO$_3$ superlattice (SL) by resonant soft x-ray scattering. The (003) peak, which is forbidden for our ideal SL structure, was observed at all photon energies, indicating reconstruction at the interface. From the peak position analyses taking into account the effects of refraction, we obtained evidence for electronic reconstruction of Ti 3d and O $2p$ states at the interface. From reflectivity analyses, we concluded that the AlO$_2$/LaO/TiO$_2$/SrO and the TiO$_2$/SrO/AlO$_2$/LaO interfaces are quite different, leading to highly asymmetric properties.
Ab initio calculations using the local spin density approximation and also including the Hubbard $U$ have been performed for three low energy configurations of the interface between LaAlO$_3$ and TiO$_2$-anatase. Two types of interfaces have been considered: LaO/TiO$_2$ and AlO$_2$/TiO, the latter with Ti-termination and therefore a missing oxygen. A slab-geometry calculation was carried out and all the atoms were allowed to relax in the direction normal to the interface. In all the cases considered, the interfacial Ti atom acquires a local magnetic moment and its formal valence is less than +4. When there are oxygen vacancies, this valence decreases abruptly inside the anatase slab while in the LaO/TiO$_2$ interface the changes are more gradual.
We have studied the electronic properties of the 2D electron liquid present at the LaAlO$_3$/SrTiO$_3$ interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650{deg}C exhibit the highest low temperature mobility ($approx 10000 textrm{ cm}^2/textrm{Vs}$) and the lowest sheet carrier density ($approx 5times 10^{12} textrm{ cm}^{-2}$). These samples show metallic behavior and Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at higher temperatures (800-900{deg}C) display carrier densities in the range of $approx 2-5 times 10^{13} textrm{ cm}^{-2}$ and mobilities of $approx 1000 textrm{ cm}^2/textrm{Vs}$ at 4K. Reducing their carrier density by field effect to $8times 10^{12} textrm{ cm}^{-2}$ lowers their mobilites to $approx 50 textrm{ cm}^2/textrm{Vs}$ bringing the conductance to the weak-localization regime.
Recent experiments have shown that transition metal oxide heterostructures such as SrTiO$_3$-based interfaces, exhibit large, gate tunable, spintronic responses. Our theoretical study showcases key factors controlling the magnitude of the conversion, measured by the inverse Edelstein and Spin Hall effects, and their evolution with respect to an electrostatic doping. The origin of the response can be linked to spin-orbital textures. These stem from the broken inversion symmetry at the interface which produces an unusual form of the interfacial spin-orbit coupling, provided a bulk atomic spin-orbit contribution is present. The amplitudes and variations of these observables are direct consequences of the multi-orbital subband structure of these materials, featuring avoided and topological crossings. Interband contributions to the coefficients lead to enhanced responses and non-monotonic evolution with doping. We highlight these effects using analytical approaches and low energy modeling.
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