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Floquet engineering of Mott insulators with strong spin-orbit coupling

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 Added by Naoya Arakawa
 Publication date 2021
  fields Physics
and research's language is English




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We propose a method for controlling the exchange interactions of Mott insulators with strong spin-orbit coupling. We consider a multiorbital system with strong spin-orbit coupling and a circularly polarized light field and derive its effective Hamiltonian in the strong-interaction limit. Applying this theory to a minimal model of $alpha$-RuCl$_{3}$, we show that the magnitudes and signs of three exchange interactions, $J$, $K$, and $Gamma$, can be changed simultaneously. Then, considering another case in which one of the hopping integrals has a different value and the other parameters are the same as those for $alpha$-RuCl$_{3}$, we show that the Heisenberg interaction $J$ can be made much smaller than the anisotropic exchange interactions $K$ and $Gamma$.



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The electronic properties of Mott insulators realized in (111) bilayers of perovskite transition-metal oxides are studied. The low-energy effective Hamiltonians for such Mott insulators are derived in the presence of a strong spin-orbit coupling. These models are characterized by the antiferromagnetic Heisenberg interaction and the anisotropic interaction whose form depends on the $d$ orbital occupancy. From exact diagonalization analyses on finite clusters, the ground state phase diagrams are derived, including a Kitaev spin liquid phase in a narrow parameter regime for $t_{2g}$ systems. Slave-boson mean-field analyses indicate the possibility of novel superconducting states induced by carrier doping into the Mott-insulating parent systems, suggesting the present model systems as unique playgrounds for studying correlation-induced novel phenomena. Possible experimental realizations are also discussed.
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