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Register a new userEnhancement of Superconductivity Linked with Linear-in-Temperature/Field Resistivity in Ion-Gated FeSe Films
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Iron selenide (FeSe) - the structurally simplest iron-based superconductor, has attracted tremendous interest in the past years. While the transition temperature (Tc) of bulk FeSe is $sim$ 8 K, it can be significantly enhanced to 40 - 50 K by various ways of electron doping. However, the underlying physics for such great enhancement of Tc and so the Cooper pairing mechanism still remain puzzles. Here, we report a systematic study of the superconducting- and normal-state properties of FeSe films via ionic liquid gating. With fine tuning, Tc evolves continuously from below 10 K to above 40 K; in situ two-coil mutual inductance measurements unambiguously confirm the gating is a uniform bulk effect. Close to Tc, the normal-state resistivity shows a linear dependence on temperature and the linearity extends to lower temperatures with the superconductivity suppressed by high magnetic fields. At high fields, the normal-state magnetoresistance exhibits a linear-in-field dependence and obeys a simple scaling relation between applied field and temperature. Consistent behaviors are observed for different-Tc states throughout the gating process, suggesting the pairing mechanism very likely remains the same from low- to high-Tc state. Importantly, the coefficient of the linear-in-temperature resistivity is positively correlated with Tc, similarly to the observations in cuprates, Bechgaard salts and iron pnictide superconductors. Our study points to a short-range antiferromagnetic exchange interaction mediated pairing mechanism in FeSe.
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In this study, we investigated the gate voltage dependence of $T_{mathrm c}$ in electrochemically etched FeSe films with an electric-double layer transistor structure. The $T_{mathrm c}^{mathrm {zero}}$ value of the etched FeSe films with a lower gate voltage ($V_{mathrm g}$ = 2.5 and 3.3 V) reaches 46 K, which is the highest value among almost all reported values from the resistivity measurements except for the data by Ge et al. This enhanced $T_{mathrm c}$ remains unchanged even after the discharge process, unlike the results for electrostatic doping without an etching process. Our results suggest that the origin of the increase in $T_{mathrm c}$ is not electrostatic doping but rather the electrochemical reaction at the surface of an etched films.
Searching for superconducting materials with high transition temperature (TC) is one of the most exciting and challenging fields in physics and materials science. Although superconductivity has been discovered for more than 100 years, the copper oxides are so far the only materials with TC above 77 K, the liquid nitrogen boiling point. Here we report an interface engineering method for dramatically raising the TC of superconducting films. We find that one unit-cell (UC) thick films of FeSe grown on SrTiO3 (STO) substrates by molecular beam epitaxy (MBE) show signatures of superconducting transition above 50 K by transport measurement. A superconducting gap as large as 20 meV of the 1 UC films observed by scanning tunneling microcopy (STM) suggests that the superconductivity could occur above 77 K. The occurrence of superconductivity is further supported by the presence of superconducting vortices under magnetic field. Our work not only demonstrates a powerful way for finding new superconductors and for raising TC, but also provides a well-defined platform for systematic study of the mechanism of unconventional superconductivity by using different superconducting materials and substrates.
The cuprates and iron-based high-temperature superconductors share many common features: layered strongly anisotropic crystal structure, strong electronic correlations, interplay between different types of electronic ordering, the intrinsic spatial inhomogeneity due to doping. The understanding of complex interplay between these factors is crucial for a directed search of new high-temperature superconductors. Here we show the appearance of inhomogeneous gossamer superconductivity in bulk FeSe compound at ambient pressure and at temperature 5 times higher than its zero-resistance $T_c$. This discovery helps to understand numerous remarkable superconducting properties of FeSe. We also find and prove a general property: if inhomogeneous superconductivity in a anisotropic conductor first appears in the form of isolated superconducting islands, it reduces electric resistivity anisotropically with maximal effect along the least conducting axis. This gives a simple and very general tool to detect inhomogeneous superconductivity in anisotropic compounds, which is critically important to study the onset of high-temperature superconductivity.
We have studied the effect of tensile strain on the superconductivity in FeSe films. 50 nm, 100 nm, and 200 nm FeSe films were grown on MgO, SrTiO$_3$, and LaAlO$_3$ substrates by using a pulsed laser deposition technique. X-ray diffraction analysis showed that the tetragonal phase is dominant in all of our FeSe films. The 50 nm FeSe films on MgO and SrTiO$_3$ are under tensile strain, while the 50 nm FeSe film on LaAlO$_3$ and the other thick FeSe films are unstrained. Superconducting transitions have been observed in unstrained FeSe films with T$_{onset}$ $approx$ 8 K, which is close to the bulk value. However, no sign of superconductivity has been observed in FeSe films under tensile strain down to 5 K. There is evidence to show that tensile strain suppresses superconductivity in FeSe films.
There is an ongoing debate about the relative importance of structural change versus doping charge carriers on the mechanism of superconductivity in Fe-based materials. Elucidating this issue is a major challenge since it would require a large number of samples where structure properties or the carrier density is systematically varied. FeSe, with its structural simplicity, is an ideal platform for addressing this question. It has been demonstrated that the superconductivity in this material can be controlled through crystal lattice tuning, as well as electronic structure manipulation. Here, we apply a high-throughput methodology to FeSe to systematically delineate the interdependence of its structural and electronic properties. Using a dual-beam pulsed laser deposition, we have generated FeSe films with a marked gradient in the superconducting transition temperature (below 2 K < Tc < 12 K) across 1 cm width of the films. The Tc gradient films display ~ 1% continuous stretch and compression in the out-of-plane and in-plane lattice constants respectively, triggering the continuous enhancement of superconductivity. Combining transport and angular-resolved photoemission measurements on uniform FeSe films with tunable Tc from 3 K to 14 K, we find that the electron carrier density is intimately correlated with Tc, i.e., it increases by a factor of 6 and ultimately surpasses the almost constant hole concentration. Our transmission electron microscope and band structure calculations reveal that rather than by shifting the chemical potential, the enhanced superconductivity is linked to the selective adjustment of the dxy band dispersion across the Fermi level by means of reduced local lattice distortions. Therefore, such novel mechanism provides a key to understand discrete superconducting phases in FeSe.
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