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Register a new userSuppression of superconductivity in FeSe films under tensile strain
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We have studied the effect of tensile strain on the superconductivity in FeSe films. 50 nm, 100 nm, and 200 nm FeSe films were grown on MgO, SrTiO$_3$, and LaAlO$_3$ substrates by using a pulsed laser deposition technique. X-ray diffraction analysis showed that the tetragonal phase is dominant in all of our FeSe films. The 50 nm FeSe films on MgO and SrTiO$_3$ are under tensile strain, while the 50 nm FeSe film on LaAlO$_3$ and the other thick FeSe films are unstrained. Superconducting transitions have been observed in unstrained FeSe films with T$_{onset}$ $approx$ 8 K, which is close to the bulk value. However, no sign of superconductivity has been observed in FeSe films under tensile strain down to 5 K. There is evidence to show that tensile strain suppresses superconductivity in FeSe films.
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Single-layer FeSe films with extremely expanded in-plane lattice constant of 3.99A are fabricated by epitaxially growing FeSe/Nb:SrTiO3/KTaO3 heterostructures, and studied by in situ angle-resolved photoemission spectroscopy. Two elliptical electron pockets at the Brillion zone corner are resolved with negligible hybridization between them, indicating the symmetry of the low energy electronic structure remains intact as a free-standing single-layer FeSe, although it is on a substrate. The superconducting gap closes at a record high temperature of 70K for the iron based superconductors. Intriguingly, the superconducting gap distribution is anisotropic but nodeless around the electron pockets, with minima at the crossings of the two pockets. Our results put strong constraints on the current theories, and support the coexistence of both even and odd parity spin-singlet pairing channels as classified by the lattice symmetry.
There is an ongoing debate about the relative importance of structural change versus doping charge carriers on the mechanism of superconductivity in Fe-based materials. Elucidating this issue is a major challenge since it would require a large number of samples where structure properties or the carrier density is systematically varied. FeSe, with its structural simplicity, is an ideal platform for addressing this question. It has been demonstrated that the superconductivity in this material can be controlled through crystal lattice tuning, as well as electronic structure manipulation. Here, we apply a high-throughput methodology to FeSe to systematically delineate the interdependence of its structural and electronic properties. Using a dual-beam pulsed laser deposition, we have generated FeSe films with a marked gradient in the superconducting transition temperature (below 2 K < Tc < 12 K) across 1 cm width of the films. The Tc gradient films display ~ 1% continuous stretch and compression in the out-of-plane and in-plane lattice constants respectively, triggering the continuous enhancement of superconductivity. Combining transport and angular-resolved photoemission measurements on uniform FeSe films with tunable Tc from 3 K to 14 K, we find that the electron carrier density is intimately correlated with Tc, i.e., it increases by a factor of 6 and ultimately surpasses the almost constant hole concentration. Our transmission electron microscope and band structure calculations reveal that rather than by shifting the chemical potential, the enhanced superconductivity is linked to the selective adjustment of the dxy band dispersion across the Fermi level by means of reduced local lattice distortions. Therefore, such novel mechanism provides a key to understand discrete superconducting phases in FeSe.
Strain is a powerful experimental tool to explore new electronic states and understand unconventional superconductivity. Here, we investigate the effect of uniaxial strain on the nematic and superconducting phase of single crystal FeSe using magnetotransport measurements. We find that the resistivity response to the strain is strongly temperature dependent and it correlates with the sign change in the Hall coefficient being driven by scattering, coupling with the lattice and multiband phenomena. Band structure calculations suggest that under strain the electron pockets develop a large in-plane anisotropy as compared with the hole pocket. Magnetotransport studies at low temperatures indicate that the mobility of the dominant carriers increases with tensile strain. Close to the critical temperature, all resistivity curves at constant strain cross in a single point, indicating a universal critical exponent linked to a strain-induced phase transition. Our results indicate that the superconducting state is enhanced under compressive strain and suppressed under tensile strain, in agreement with the trends observed in FeSe thin films and overdoped pnictides, whereas the nematic phase seems to be affected in the opposite way by the uniaxial strain. By comparing the enhanced superconductivity under strain of different systems, our results suggest that strain on its own cannot account for the enhanced high $T_c$ superconductivity of FeSe systems.
FeSe is a unique superconductor that can be manipulated to enhance its superconductivity using different routes while its monolayer form grown on different substrates reaches a record high temperature for a two-dimensional system. In order to understand the role played by the substrate and the reduced dimensionality on superconductivity, we examine the superconducting properties of exfoliated FeSe thin flakes by reducing the thickness from bulk down towards 9 nm. Magnetotransport measurements performed in magnetic fields up to 16T and temperatures down to 2K help to build up complete superconducting phase diagrams of different thickness flakes. While the thick flakes resemble the bulk behaviour, by reducing the thickness the superconductivity of FeSe flakes is suppressed. In the thin limit we detect signatures of a crossover towards two-dimensional behaviour from the observation of the vortex-antivortex unbinding transition and strongly enhanced anisotropy. Our study provides detailed insights into the evolution of the superconducting properties from three-dimensional bulk behaviour towards the two-dimensional limit of FeSe in the absence of a dopant substrate.
Stabilized FeSe thin films in ambient pressure with tunable superconductivity would be a promising candidate for superconducting electronic devices yet its superconducting transition temperature (Tc) is below 10 K in bulk materials. By carefully controlling the depositions on twelve kinds of substrates using pulsed laser deposition technique, high quality single crystalline FeSe samples were fabricated with full width of half maximum 0.515? in the rocking curve and clear four-fold symmetry in phi-scan from x-ray diractions. The films have a maximum Tc 15 K on the CaF2 substrate and do not show obvious decay in the air for more than half a year. Slightly tuning the stoichiometry of the FeSe targets, the Tc becomes adjustable from 15 to < 2 K with quite narrow transition widths less than 2 K, and shows a positive relation with the out-of-plane (c-axis) lattice parameter of the films. However, there is no clear relation between the Tc and the surface atomic distance of the substrates. By reducing the thickness of the films, the Tc decreases and fades away in samples of less than 10 nm, suggesting that the strain effect is not responsible for the enhancement of Tc in our experiments.
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