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Register a new userInvestigating microwave loss of SiGe using superconducting transmon qubits
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Silicon-Germanium (SiGe) is a material that possesses a multitude of applications ranging from transistors to eletro-optical modulators and quantum dots. The diverse properties of SiGe also make it attractive to implementations involving superconducting quantum computing. Here we demonstrate the fabrication of transmon quantum bits on SiGe layers and investigate the microwave loss properties of SiGe at cryogenic temperatures and single photon microwave powers. We find relaxation times of up to 100 $mu$s, corresponding to a quality factor Q above 4 M for large pad transmons. The high Q values obtained indicate that the SiGe/Si heterostructure is compatible with state of the art performance of superconducting quantum circuits.
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Superconducting qubits are sensitive to a variety of loss mechanisms including dielectric loss from interfaces. By changing the physical footprint of the qubit it is possible to modulate sensitivity to surface loss. Here we show a systematic study of planar superconducting transmons of differing physical footprints to optimize the qubit design for maximum coherence. We find that qubits with small footprints are limited by surface loss and that qubits with large footprints are limited by other loss mechanisms which are currently not understood.
The performance of superconducting circuits for quantum computing is limited by materials losses. In particular, coherence times are typically bounded by two-level system (TLS) losses at single photon powers and millikelvin temperatures. The identification of low loss fabrication techniques, materials, and thin film dielectrics is critical to achieving scalable architectures for superconducting quantum computing. Superconducting microwave resonators provide a convenient qubit proxy for assessing performance and studying TLS loss and other mechanisms relevant to superconducting circuits such as non-equilibrium quasiparticles and magnetic flux vortices. In this review article, we provide an overview of considerations for designing accurate resonator experiments to characterize loss, including applicable types of loss, cryogenic setup, device design, and methods for extracting material and interface losses, summarizing techniques that have been evolving for over two decades. Results from measurements of a wide variety of materials and processes are also summarized. Lastly, we present recommendations for the reporting of loss data from superconducting microwave resonators to facilitate materials comparisons across the field.
Superconducting transmon qubits comprise one of the most promising platforms for quantum information processing due to their long coherence times and to their scalability into larger qubit networks. However, their weakly anharmonic spectrum leads to spectral crowding in multiqubit systems, making it challenging to implement fast, high-fidelity gates while avoiding leakage errors. To address this challenge, we use a protocol known as SWIPHT [Phys. Rev. B 91, 161405(R) (2015)], which yields smooth, simple microwave pulses designed to suppress leakage without sacrificing gate speed through spectral selectivity. Here, we determine the parameter regimes in which SWIPHT is effective and demonstrate that in these regimes it systematically produces two-qubit gate fidelities for cavity-coupled transmons in the range 99.6%-99.9% with gate times as fast as 23 ns. Our results are obtained from full numerical simulations that include current experimental levels of relaxation and dephasing. These high fidelities persist over a wide range of system parameters that encompass many current experimental setups and are insensitive to small parameter variations and pulse imperfections.
We characterize highly coherent transmon qubits fabricated with a direct-write photolithography system. Multi-layer evaporation and oxidation allows us to change the critical current density by reducing the effective tunneling area and increasing the barrier thickness. Surface treatments before resist application and again before evaporation result in high coherence devices. With optimized surface treatments we achieve energy relaxation $T_1$ times in excess of $80 mu$s for three dimensional transmon qubits with Josephson junction lithographic areas of 2 $mumathrm{m}^2$.
We report the realization of quantum microwave circuits using hybrid superconductor-semiconductor Josephson elements comprised of InAs nanowires contacted by NbTiN. Capacitively-shunted single elements behave as transmon qubits with electrically tunable transition frequencies. Two-element circuits also exhibit transmon-like behavior near zero applied flux, but behave as flux qubits at half the flux quantum, where non-sinusoidal current-phase relations in the elements produce a double-well Josephson potential. These hybrid Josephson elements are promising for applications requiring microwave superconducting circuits operating in magnetic field.
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