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Drawing inspiration from bilayer graphene, this paper introduces its photonic analog comprising two stacked graphene-like photonic crystals, that are coupled in the near-field through spoof surface plasmons. Beyond the twist degree of freedom that can radically alter the band structure of the bilayer photonic graphene, the photonic dispersion can be also tailored via the interlayer coupling which exhibits an exponential dependence on the distance between the two photonic crystals. We theoretically, numerically, and experimentally characterize the band structures of AA- and AB-stacked bilayer photonic graphene, as well as for twisted bilayer photonic graphene with even and odd sublattice exchange symmetries. Furthermore, we numerically predict the existence of magic angles in bilayer photonic graphene, which are associated with ultra-flat bands resulted from interlayer hybridization. Finally, we demonstrate that the bilayer photonic graphene at a particular twist angle satisfying even sublattice exchange symmetry is a high-order photonic topological insulator. The proposed bilayer photonic graphene could constitute a useful platform for identifying new quantum materials and inspiring next-generation photonic devices with new degrees of freedom and emerging functionality.
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Topological valley kink states have become a significant research frontier with considerable intriguing applications such as robust on-chip communications and topological lasers. Unlike guided modes with adjustable widths in most conventional waveguides, the valley kink states are usually highly confined around the domain walls and thus lack the mode width degree of freedom (DOF), posing a serious limitation to potential device applications. Here, by adding a photonic crystal (PhC) featuring a Dirac point between two valley PhCs with opposite valley-Chern numbers, we design and experimentally demonstrate topological valley-locked waveguides (TVLWs) with tunable mode widths. The photoinc TVLWs could find unique applications, such as high-energy-capacity topological channel intersections, valley-locked energy concentrators, and topological cavities with designable confinement, as verified numerically and experimentally. The TVLWs with width DOF could be beneficial to interface with the exsisting photonic waveguides and devices, and serve as a novel platform for practical use of topological lasing, field enhancement, on-chip communicaitons, and high-capacity energy transport.
We report on the rst evidence of direct micropeak machining using a photonic jet (PJ) with nanosecond laser pulses. PJ is a high concentrated propagative light beam with a full width at half maximum (FWHM) smaller than the diraction limit. In our case, PJs are generated with a shaped optical ber tip. Micropeaks with a FWHM of around 1 $mu$m, a height until 590 nm and an apex radius of 14 nm, were repeatability achieved on a silicon wafer. The experiments have been carried out in ambient air using a 100/140 multimode silica ber with a shaped tip along with a 35 kHz pulsed laser emitting 100 ns pulses at 1064 nm. This study shows that the phenomenon occurs only at low energies, just under the ablation threshold. Bulk material appears to have moved around to achieve the peaks in a selforganized process. We hypothesize that the matter was melted and not vaporized; hydrodynamic ow of molten material governed by surfacetension forces may be the causes. This surface modication has many applications. For example, this paper reports on the decrease of wettability of a textured silicon wafer.
Reconfigurability of photonic integrated circuits (PICs) has become increasingly important due to the growing demands for electronic-photonic systems on a chip driven by emerging applications, including neuromorphic computing, quantum information, and microwave photonics. Success in these fields usually requires highly scalable photonic switching units as essential building blocks. Current photonic switches, however, mainly rely on materials with weak, volatile thermo-optic or electro-optic modulation effects, resulting in a large footprint and high energy consumption. As a promising alternative, chalcogenide phase-change materials (PCMs) exhibit strong modulation in a static, self-holding fashion. Here, we demonstrate nonvolatile electrically reconfigurable photonic switches using PCM-clad silicon waveguides and microring resonators that are intrinsically compact and energy-efficient. With phase transitions actuated by in-situ silicon PIN heaters, near-zero additional loss and reversible switching with high endurance are obtained in a complementary metal-oxide-semiconductor (CMOS)-compatible process. Our work can potentially enable very large-scale general-purpose programmable integrated photonic processors.
At photonic Dirac points, electromagnetic waves are governed by the same equations as two-component massless relativistic fermions. However, photonic Dirac points are known to occur in pairs in photonic graphene and other similar photonic crystals, which necessitates special precautions to excite only states near one of the Dirac points. Systems hosting unpaired photonic Dirac points are significantly harder to realize, as they require broken time-reversal symmetry. Here, we report on the first observation of an unpaired Dirac point in a planar two-dimensional photonic crystal. The structure incorporates gyromagnetic materials, which break time-reversal symmetry; the unpaired Dirac point occurs when a parity-breaking parameter is fine-tuned to a topological transition between a photonic Chern insulator and a conventional photonic insulator phase. Evidence for the unpaired Dirac point is provided by transmission and field-mapping experiments, including a demonstration of strongly non-reciprocal reflection. This photonic crystal is suitable for investigating the unique features of two-dimensional Dirac states, such as one-way Klein tunneling.
Modern microelectronic processors have migrated towards parallel computing architectures with many-core processors. However, such expansion comes with diminishing returns exacted by the high cost of data movement between individual processors. The use of optical interconnects has burgeoned as a promising technology that can address the limits of this data transfer. While recent pushes to enhance optical communication have focused on developing wavelength-division multiplexing technology, this approach will eventually saturate the usable bandwidth, and new dimensions of data transfer will be paramount to fulfill the ever-growing need for speed. Here we demonstrate an integrated intra- and inter-chip multi-dimensional communication scheme enabled by photonic inverse design. Using broad-band inverse-designed mode-division multiplexers, we combine wavelength- and mode- multiplexing of data at a rate exceeding terabit-per-second. Crucially, as we take advantage of an orthogonal optical basis, our approach is inherently scalable to a multiplicative enhancement over the current state of the art.
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