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Register a new userTunable ferroelectricity in hBN intercalated twisted double-layer graphene
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Van der Waals (vdW) assembly of two-dimensional materials has been long recognized as a powerful tool to create unique systems with properties that cannot be found in natural compounds. However, among the variety of vdW heterostructures and their various properties, only a few have revealed metallic and ferroelectric behaviour signatures. Here we show ferroelectric semimetal made of double-gated double-layer graphene separated by an atomically thin crystal of hexagonal boron nitride, which demonstrating high room temperature mobility of the order of 10 m$^2$V$^{-1}$s$^{-1}$ and exhibits robust ambipolar switching in response to the external electric field. The observed hysteresis is tunable, reversible and persists above room temperature. Our fabrication method expands the family of ferroelectric vdW compounds and offers a route for developing novel phase-changing devices.
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We analyze the effect of screening provided by the additional graphene layer in double layer graphene heterostructures (DLGs) on transport characteristics of DLG devices in the metallic regime. The effect of gate-tunable charge density in the additional layer is two-fold: it provides screening of the long-range potential of charged defects in the system, and screens out Coulomb interactions between charge carriers. We find that the efficiency of defect charge screening is strongly dependent on the concentration and location of defects within the DLG. In particular, only a moderate suppression of electron-hole puddles around the Dirac point induced by the high concentration of remote impurities in the silicon oxide substrate could be achieved. A stronger effect is found on the elastic relaxation rate due to charged defects resulting in mobility strongly dependent on the electron denisty in the additional layer of DLG. We find that the quantum interference correction to the resistivity of graphene is also strongly affected by screening in DLG. In particular, the dephasing rate is strongly suppressed by the additional screening that supresses the amplitude of electron-electron interaction and reduces the diffusion time that electrons spend in proximity of each other. The latter effect combined with screening of elastic relaxation rates results in a peculiar gate tunable weak-localization magnetoresistance and quantum correction to resistivity. We propose suitable experiments to test our theory and discuss the possible relevance of our results to exisiting data.
We study room temperature spin transport in graphene devices encapsulated between a layer-by-layer-stacked two-layer-thick chemical vapour deposition (CVD) grown hexagonal boron nitride (hBN) tunnel barrier, and a few-layer-thick exfoliated-hBN substrate. We find mobilities and spin-relaxation times comparable to that of SiO$_2$ substrate based graphene devices, and obtain a similar order of magnitude of spin relaxation rates for both the Elliott-Yafet and DYakonov-Perel mechanisms. The behaviour of ferromagnet/two-layer-CVD-hBN/graphene/hBN contacts ranges from transparent to tunneling due to inhomogeneities in the CVD-hBN barriers. Surprisingly, we find both positive and negative spin polarizations for high-resistance two-layer-CVD-hBN barrier contacts with respect to the low-resistance contacts. Furthermore, we find that the differential spin injection polarization of the high-resistance contacts can be modulated by DC bias from -0.3 V to +0.3 V with no change in its sign, while its magnitude increases at higher negative bias. These features mark a distinctive spin injection nature of the two-layer-CVD-hBN compared to the bilayer-exfoliated-hBN tunnel barriers.
A variety of correlated phases have recently emerged in select twisted van der Waals (vdW) heterostructures owing to their flat electronic dispersions. In particular, heterostructures of twisted double bilayer graphene (tDBG) manifest electric field-tunable correlated insulating (CI) states at all quarter fillings of the conduction band, accompanied by nearby states featuring signatures suggestive of superconductivity. Here, we report electrical transport measurements of tDBG in which we elucidate the fundamental role of spontaneous symmetry breaking within its correlated phase diagram. We observe abrupt resistivity drops upon lowering the temperature in the correlated metallic phases neighboring the CI states, along with associated nonlinear $I$-$V$ characteristics. Despite qualitative similarities to superconductivity, concomitant reversals in the sign of the Hall coefficient instead point to spontaneous symmetry breaking as the origin of the abrupt resistivity drops, while Joule heating appears to underlie the nonlinear transport. Our results suggest that similar mechanisms are likely relevant across a broader class of semiconducting flat band vdW heterostructures.
We use temperature-dependent resistivity in small-angle twisted double bilayer graphene to measure bandwidths and gaps of the bands. This electron-hole asymmetric system has one set of non-dispersing bands that splits into two flat bands with the electric field - distinct from the twisted bilayer system. With electric field, the gap between two emergent flat bands increases monotonically and bandwidth is tuned from 1 meV to 15 meV. These two flat bands with gap result in a series of thermally induced insulator to metal transitions - we use a model, at charge neutrality, to measure the bandwidth using only transport measurements. Having two flat bands with tunable gap and bandwidth offers an opportunity to probe the emergence of correlations.
When twisted to angles near 1{deg}, graphene multilayers provide a new window on electron correlation physics by hosting gate-tuneable strongly-correlated states, including insulators, superconductors, and unusual magnets. Here we report the discovery of a new member of the family, density-wave states, in double bilayer graphene twisted to 2.37{deg}. At this angle the moire states retain much of their isolated bilayer character, allowing their bilayer projections to be separately controlled by gates. We use this property to generate an energetic overlap between narrow isolated electron and hole bands with good nesting properties. Our measurements reveal the formation of ordered states with reconstructed Fermi surfaces, consistent with density-wave states, for equal electron and hole densities. These states can be tuned without introducing chemical dopants, thus opening the door to a new class of fundamental studies of density-waves and their interplay with superconductivity and other types of order, a central issue in quantum matter physics.
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