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Register a new userElectronic Characterization of a Charge-Transfer Complex Monolayer on Graphene
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Organic charge-transfer complexes (CTCs) formed by strong electron acceptor and strong electron donor molecules are known to exhibit exotic effects such as superconductivity and charge density waves. We present a low-temperature scanning tunneling microscopy and spectroscopy (LT-STM/STS) study of a two-dimensional (2D) monolayer CTC of tetrathiafulvalene (TTF) and fluorinated tetracyanoquinodimethane (F4TCNQ), self-assembled on the surface of oxygen-intercalated epitaxial graphene on Ir(111) (G/O/Ir(111)). We confirm the formation of the charge-transfer complex by dI/dV spectroscopy and direct imaging of the singly-occupied molecular orbitals. High-resolution spectroscopy reveals a gap at zero bias, suggesting the formation of a correlated ground state at low temperatures. These results point to the possibility to realize and study correlated ground states in charge-transfer complex monolayers on weakly interacting surfaces.
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Electronic analogue of generalized Goos-H{a}nchen shifts is investigated in the monolayer graphene superlattice with one-dimensional periodic potentials of square barriers. It is found that the lateral shifts for the electron beam transmitted through the monolayer graphene superlattice can be negative as well as positive near the band edges of zero-$bar{k}$ gap, which are different from those near the band edges of Bragg gap. These negative and positive beam shifts have close relation to the Dirac point. When the condition $q_A d_A= -q_B d_B= m pi$ ($m=1,2,3...$) is satisfied, the beam shifts can be controlled from negative to positive when the incident energy is above the Dirac point, and vice versa. In addition, the beam shifts can be greatly enhanced by the defect mode inside the zero-$bar{k}$ gap. These intriguing phenomena can be verified in a relatively simple optical setup, and have potential applications in the graphene-based electron wave devices.
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Charge doping in transition metal dichalcogenide is currently a subject of high importance for future electronic and optoelectronic applications. Here we demonstrate chemical doping in CVD grown monolayer (1L) of WS2 by a few commonly used laboratory solvents by investigating the room temperature photoluminescence (PL). The appearance of distinct trionic emission in the PL spectra and quenched PL intensities suggest n-type doping in WS2. The temperature-dependent PL spectra of the doped 1L-WS2 reveal significant enhancement of trion emission intensity over the excitonic emission at low temperature indicating the stability of trion at low temperature. The temperature dependent exciton-trion population dynamic has been modeled using the law of mass action of trion formation. These results shed light on the solution-based chemical doping in 1L WS2 and its profound effect on the photoluminescence which is essential for the control of optical and electrical properties for optoelectronics applications.
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