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Register a new userElectronic Bloch oscillation in a pristine monolayer graphene
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In a pristine monolayer graphene subjected to a constant electric field along the layer, the Bloch oscillation of an electron is studied in a simple and efficient way. By using the electronic dispersion relation, the formula of a semi-classical velocity is derived analytically, and then many aspects of Bloch oscillation, such as its frequency, amplitude, as well as the direction of the oscillation, are investigated. It is interesting to find that the electric field affects the component of motion, which is non-collinear with electric field, and leads the particle to be accelerated or oscillated in another component.
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We investigate the electronic Bloch oscillation in bilayer graphene gradient superlattices using transfer matrix method. By introducing two kinds of gradient potentials of square barriers along electrons propagation direction, we find that Bloch oscillations up to terahertz can occur. Wannier-Stark ladders, as the counterpart of Bloch oscillation, are obtained as a series of equidistant transmission peaks, and the localization of the electronic wave function is also signature of Bloch oscillation. Forthermore, the period of Bloch oscillation decreases linearly with increasing gradient of barrier potentials.
Electrons in two-dimensional hexagonal materials have valley degree of freedom, which can be used to encode and process quantum information. The valley-selective excitations, governed by the circularly polarised light resonant with the materials band-gap, continues to be the foundation of valleytronics. It is often assumed that achieving valley selective excitation in pristine graphene with all-optical means is not possible due to the inversion symmetry of the system. Here we demonstrate that both valley-selective excitation and valley-selective high-harmonic generation can be achieved in pristine graphene by using the combination of two counter-rotating circularly polarized fields, the fundamental and its second harmonic. Controlling the relative phase between the two colours allows us to select the valleys where the electron-hole pairs and higher-order harmonics are generated. We also describe an all-optical method for measuring valley polarization in graphene with a weak probe pulse. This work offers a robust recipe to write and read valley-selective electron excitations in materials with zero bandgap and zero Berry curvature.
Coherent light-matter interaction can be used to manipulate the energy levels of atoms, molecules and solids. When light with frequency {omega} is detuned away from a resonance {omega}o, repulsion between the photon-dressed (Floquet) states can lead to a shift of energy resonance. The dominant effect is the optical Stark shift (1/({omega}0-{omega})), but there is an additional contribution from the so-called Bloch-Siegert shift (1/({omega}o+{omega})). Although it is common in atoms and molecules, the observation of Bloch-Siegert shift in solids has so far been limited only to artificial atoms since the shifts were small (<1 {mu}eV) and inseparable from the optical Stark shift. Here we observe an exceptionally large Bloch-Siegert shift (~10 meV) in monolayer WS2 under infrared optical driving by virtue of the strong light-matter interaction in this system. Moreover, we can disentangle the Bloch-Siegert shift entirely from the optical Stark shift, because the two effects are found to obey opposite selection rules at different valleys. By controlling the light helicity, we can confine the Bloch-Siegert shift to occur only at one valley, and the optical Stark shift at the other valley. Such a valley-exclusive Bloch-Siegert shift allows for enhanced control over the valleytronic properties in two-dimensional materials, and offers a new avenue to explore quantum optics in solids.
Electronic analogue of generalized Goos-H{a}nchen shifts is investigated in the monolayer graphene superlattice with one-dimensional periodic potentials of square barriers. It is found that the lateral shifts for the electron beam transmitted through the monolayer graphene superlattice can be negative as well as positive near the band edges of zero-$bar{k}$ gap, which are different from those near the band edges of Bragg gap. These negative and positive beam shifts have close relation to the Dirac point. When the condition $q_A d_A= -q_B d_B= m pi$ ($m=1,2,3...$) is satisfied, the beam shifts can be controlled from negative to positive when the incident energy is above the Dirac point, and vice versa. In addition, the beam shifts can be greatly enhanced by the defect mode inside the zero-$bar{k}$ gap. These intriguing phenomena can be verified in a relatively simple optical setup, and have potential applications in the graphene-based electron wave devices.
Based on a low temperature scanning tunneling microscopy study, we present a direct visualization of a cycloaddition reaction performed for some specific fluorinated maleimide molecules deposited on graphene. These studies showed that the cycloaddition reactions can be carried out on the basal plane of graphene, even when there are no pre-existing defects. In the course of covalently grafting the molecules to graphene, the sp2 conjugation of carbon atoms was broken and local sp3 bonds were created. The grafted molecules perturbed the graphene lattice, generating a standing-wave pattern with an anisotropy which was attributed to a (1,2) cycloaddition, as revealed by T-matrix approximation calculations. DFT calculations showed that while both (1,4) and (1,2) cycloaddition were possible on free standing graphene, only the (1,2) cycloaddition could be obtained for graphene on SiC(0001). Globally averaging spectroscopic techniques, XPS and ARPES, were used to determine the modification in the elemental composition of the samples induced by the reaction, indicating an opening of an electronic gap in graphene.
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