Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userSuppression of second-harmonic generation from linear bands in the topological multifold semimetal RhSi
108
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Recent experiments in the topological Weyl semimetal TaAs have observed record-breaking second-harmonic generation, a non-linear optical response at $2omega$ generated by an incoming light source at $omega$. However, whether second-harmonic generation is enhanced in topological semimetals in general is a challenging open question because their band structure entangles the contributions arising from trivial bands and topological band crossings. In this work, we circumvent this problem by studying RhSi, a chiral topological semimetal with a simple band structure with topological multifold fermions close to the Fermi energy. We measure second-harmonic generation (SHG) in a wide frequency window, $omegain [0.27,1.5]$eV and, using first principle calculations, we establish that, due to their linear dispersion, the contribution of multifold fermions to SHG is subdominant as compared with other regions in the Brillouin zone. Our calculations suggest that parts of the bands where the dispersion is relatively flat contribute significantly to SHG. As a whole, our results suggest avenues to enhance SHG responses.
rate research
Read More
Chiral topological semimetals are materials that break both inversion and mirror symmetries. They host interesting phenomena such as the quantized circular photogalvanic effect (CPGE) and the chiral magnetic effect. In this work, we report a comprehensive theoretical and experimental analysis of the linear and non-linear optical responses of the chiral topological semimetal RhSi, which is known to host multifold fermions. We show that the characteristic features of the optical conductivity, which display two distinct quasi-linear regimes above and below 0.4 eV, can be linked to excitations of different kinds of multifold fermions. The characteristic features of the CPGE, which displays a sign change at 0.4 eV and a large non-quantized response peak of around 160 $mu textrm{A V}^{-2}$ at 0.7 eV, are explained by assuming that the chemical potential crosses a flat hole band at the Brillouin zone center. Our theory predicts that, in order to observe a quantized CPGE in RhSi, it is necessary to increase the chemical potential as well as the quasiparticle lifetime. More broadly our methodology, especially the development of the broadband terahertz emission spectroscopy, could be widely applied to study photo-galvanic effects in noncentrosymmetric materials and in topological insulators in a contact-less way and accelerate the technological development of efficient infrared detectors based on topological semimetals.
We report the optical conductivity in high-quality crystals of the chiral topological semimetal CoSi, which hosts exotic quasiparticles known as multifold fermions. We find that the optical response is separated into several distinct regions as a function of frequency, each dominated by different types of quasiparticles. The low-frequency intraband response is captured by a narrow Drude peak from a high-mobility electron pocket of double Weyl quasi-particles, and the temperature dependence of the spectral weight is consistent with its Fermi velocity. By subtracting the low-frequency sharp Drude and phonon peaks at low temperatures, we reveal two intermediate quasi-linear inter-band contributions separated by a kink at 0.2 eV. Using Wannier tight-binding models based on first-principle calculations, we link the optical conductivity above and below 0.2 eV to interband transitions near the double Weyl fermion and a threefold fermion, respectively. We analyze and determine the chemical potential relative to the energy of the threefold fermion, revealing the importance of transitions between a linearly dispersing band and a flat band. More strikingly, below 0.1 eV our data are best explained if spin-orbit coupling is included, suggesting that at these energies the optical response is governed by transitions between a previously unobserved four-fold spin-3/2 node and a Weyl node. Our comprehensive combined experimental and theoretical study provides a way to resolve different types of multifold fermions in CoSi at different energy. More broadly our results provide the necessary basis to interpret the burgeoning set of optical and transport experiments in chiral topological semimetals.
We show that the lack of inversion symmetry in monolayer MoS2 allows strong optical second harmonic generation. Second harmonic of an 810-nm pulse is generated in a mechanically exfoliated monolayer, with a nonlinear susceptibility on the order of 1E-7 m/V. The susceptibility reduces by a factor of seven in trilayers, and by about two orders of magnitude in even layers. A proof-of-principle second harmonic microscopy measurement is performed on samples grown by chemical vapor deposition, which illustrates potential applications of this effect in fast and non-invasive detection of crystalline orientation, thickness uniformity, layer stacking, and single-crystal domain size of atomically thin films of MoS2 and similar materials.
Topological materials often exhibit remarkably linear, non-saturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically non-trivial states in the emergence of such a behaviour has been difficult to establish in experiments. Here, we show how strong interaction between the topological surface states (TSS) with a positive g-factor and the bulk carriers can lead to a smearing of the Landau levels giving rise to an LMR behavior in a semi-metallic Heusler compound. The role of TSS is established by controllably reducing the surface-bulk coupling by a combination of substitution alloying and the application of high magnetic field, when the LMR behavior transmutes into a quantum Hall phase arising from the TSS. Our work establishes that small changes in the coupling strength between the surface and the bulk carriers can have a profound impact on the magnetotransport behavior in topological materials. In the process, we lay out a strategy to both reveal and manipulate the exotic properties of TSS in compounds with a semi-metallic bulk band structure, as is the case in multi-functional Heusler compounds.
It was reported earlier [Phys. Rev. Lett. 106, 056401 (2011)] that the skutterudite structure compound CoSb$_3$ displays a unique band structure with a topological transition versus a symmetry-preserving sublattice (Sb) displacement very near the structural ground state. The transition is through a massless Dirac-Weyl semimetal, point Fermi surface phase which is unique in that (1) it appears in a three dimensional crystal, (2) the band critical point occurs at $k$=0, and (3) linear bands are degenerate with conventional (massive) bands at the critical point (before inclusion of spin-orbit coupling). Further interest arises because the critical point separates a conventional (trivial) phase from a topological phase. In the native cubic structure this is a zero-gap topological semimetal; we show how spin-orbit coupling and uniaxial strain converts the system to a topological insulator (TI). We also analyze the origin of the linear band in this class of materials, which is the characteristic that makes them potentially useful in thermoelectric applications or possibly as transparent conductors. We characterize the formal charge as Co$^{+}$ $d^8$, consistent with the gap, with its $bar{3}$ site symmetry, and with its lack of moment. The Sb states are characterized as $p_x$ (separately, $p_y$) $sigma$-bonded $Sb_4$ ring states occupied and the corresponding antibonding states empty. The remaining (locally) $p_z$ orbitals form molecular orbitals with definite parity centered on the empty $2a$ site in the skutterudite structure. Eight such orbitals must be occupied; the one giving the linear band is an odd orbital singlet $A_{2u}$ at the zone center. We observe that the provocative linearity of the band within the gap is a consequence of the aforementioned near-degeneracy, which is also responsible for the small band gap.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
