No Arabic abstract
Using the recently developed time-dependent Landauer-Buttiker formalism and Jefimenkos retarded solutions to the Maxwell equations, we show how to compute the time-dependent electromagnetic field produced by the charge and current densities in nanojunctions out of equilibrium. We then apply this formalism to a benzene ring junction, and show that geometry-dependent quantum interference effects can be used to control the magnetic field in the vicinity of the molecule. Then, treating the molecular junction as a quantum emitter, we demonstrate clear signatures of the local molecular geometry in the non-local radiated power.
The conductance of breaking metallic nanojunctions shows plateaus alternated with sudden jumps, corresponding to the stretching of stable atomic configurations and atomic rearrangements, respectively. We investigate the structure of the conductance plateaus both by measuring the voltage dependence of the plateaus slope on individual junctions and by a detailed statistical analysis on a large amount of contacts. Though the atomic discreteness of the junction plays a fundamental role in the evolution of the conductance, we find that the fine structure of the conductance plateaus is determined by quantum interference phenomenon to a great extent.
Working within the Nonequilibrium Greens Function (NEGF) formalism, a formula for the two-time current correlation function is derived for the case of transport through a nanojunction in response to an arbitrary time-dependent bias. The one-particle Hamiltonian and the Wide Band Limit Approximation (WBLA) are assumed, enabling us to extract all necessary Greens functions and self energies for the system, extending the analytic work presented previously [Ridley et al. Phys. Rev. B (2015)]. We show that our new expression for the two-time correlation function generalises the Buttiker theory of shot and thermal noise on the current through a nanojunction to the time-dependent bias case including the transient regime following the switch-on. Transient terms in the correlation function arise from an initial state that does not assume (as is usually done) that the system is initially uncoupled, i.e. our approach is partition-free. We show that when the bias loses its time-dependence, the long time-limit of the current correlation function depends on the time difference only, as in this case an ideal steady state is reached. This enables derivation of known results for the single frequency power spectrum and for the zero frequency limit of this power spectrum. In addition, we present a technique which for the first time facilitates fast calculations of the transient quantum noise, valid for arbitrary temperature, time and voltage scales. We apply this to the quantum dot and molecular wire systems for both DC and AC biases, and find a novel signature of the traversal time for electrons crossing the wire in the time-dependent cross-lead current correlations.
We consider nanojunctions in the single-electron tunnelling regime which, due to a high degree of spatial symmetry, have a degenerate many body spectrum. As a consequence, interference phenomena which cause a current blocking can occur at specific values of the bias and gate voltage. We present here a general formalism to give necessary and sufficient conditions for interference blockade also in the presence of spin polarized leads. As an example we analyze a triple quantum dot single electron transistor (SET). For a set-up with parallel polarized leads, we show how to selectively prepare the system in each of the three states of an excited spin triplet without application of any external magnetic field.
We predict and analyze {it radiation-induced quantum interference effect} in low-dimensional $n$-$p$ junctions. This phenomenon manifests itself by large oscillations of the photocurrent as a function of the gate voltage or the frequency of the radiation. The oscillations result from the quantum interference between two electron paths accompanied by resonant absorption of photons. They resemble Ramsey quantum beating and Stueckelberg oscillations well-known in atomic physics. The effect can be observed in one- and two-dimensional $n$-$p$ junctions based on nanowires, carbon nanotubes, monolayer or bilayer graphene nanoribbons.
(Dated: July 17, 2017) We calculate the electric charge current flowing through a vibrating molecular nanojunction, which is driven by an ac voltage, in its regime of nonlinear oscillations. Without loss of generality, we model the junction by a vibrating molecule which is doubly clamped to two metallic leads which are biased by time-periodic ac voltages. Dressed-electron tunneling between the leads and the molecule drives the mechanical degree of freedom out of equilibrium. In the deep quantum regime, where only a few vibrational quanta are excited, the formation of coherent vibrational resonances affects the dressed-electron tunneling. In turn, back action modifies the electronic ac current passing through the junction. The concert of nonlinear vibrations and ac driving induces quantum transport currents which are antiresonant to the applied ac voltage. Quantum back action on the flowing nonequilibriun current allows us to obtain rather sharp spectroscopic information on the population of the mechanical vibrational states.