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Register a new userRadiation-induced quantum interference in low-dimensional $n$-$p$ junctions
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We predict and analyze {it radiation-induced quantum interference effect} in low-dimensional $n$-$p$ junctions. This phenomenon manifests itself by large oscillations of the photocurrent as a function of the gate voltage or the frequency of the radiation. The oscillations result from the quantum interference between two electron paths accompanied by resonant absorption of photons. They resemble Ramsey quantum beating and Stueckelberg oscillations well-known in atomic physics. The effect can be observed in one- and two-dimensional $n$-$p$ junctions based on nanowires, carbon nanotubes, monolayer or bilayer graphene nanoribbons.
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We investigate the electron transport through a graphene p-n junction under a perpendicular magnetic field. By using Landauar-Buttiker formalism combining with the non-equilibrium Green function method, the conductance is studied for the clean and disordered samples. For the clean p-n junction, the conductance is quite small. In the presence of disorders, it is strongly enhanced and exhibits plateau structure at suitable range of disorders. Our numerical results show that the lowest plateau can survive for a very broad range of disorder strength, but the existence of high plateaus depends on system parameters and sometimes can not be formed at all. When the disorder is slightly outside of this disorder range, some conductance plateaus can still emerge with its value lower than the ideal value. These results are in excellent agreement with the recent experiment.
Interference represents one of the most striking manifestation of quantum physics in low-dimensional systems. Despite evidences of quantum interference in charge transport have been known for a long time, only recently signatures of interference induced thermal properties have been reported, paving the way for the phase-coherent manipulation of heat in mesoscopic devices. In this work we show that anomalous thermoelectric properties and efficient heat rectification can be achieved by exploiting the phase-coherent edge states of quantum Hall systems. By considering a tunneling geometry with multiple quantum point contacts, we demonstrate that the interference paths effectively break the electron-hole symmetry, allowing for a thermoelectric charge current flowing either from hot to cold or viceversa, depending on the details of the tunnel junction. Correspondingly, an interference induced heat current is predicted, and we are able to explain these results in terms of an intuitive physical picture. Moreover, we show that heat rectification can be achieved by coupling two quantum Hall systems with different filling factors, and that this effect can be enhanced by exploiting the interference properties of the tunnel junction.
Recent research in two-dimensional (2D) materials has boosted a renovated interest in the p-n junction, one of the oldest electrical components which can be used in electronics and optoelectronics. 2D materials offer remarkable flexibility to design novel p-n junction device architectures, not possible with conventional bulk semiconductors. In this Review we thoroughly describe the different 2D p-n junction geometries studied so far, focusing on vertical (out-of-plane) and lateral (in-plane) 2D junctions and on mixed-dimensional junctions. We discuss the assembly methods developed to fabricate 2D p-n junctions making a distinction between top-down and bottom-up approaches. We also revise the literature studying the different applications of these atomically thin p-n junctions in electronic and optoelectronic devices. We discuss experiments on 2D p-n junctions used as current rectifiers, photodetectors, solar cells and light emitting devices. The important electronics and optoelectronics parameters of the discussed devices are listed in a table to facilitate their comparison. We conclude the Review with a critical discussion about the future outlook and challenges of this incipient research field.
Electrical transport in three dimensional topological insulators(TIs) occurs through spin-momentum locked topological surface states that enclose an insulating bulk. In the presence of a magnetic field, surface states get quantized into Landau levels giving rise to chiral edge states that are naturally spin-polarized due to spin momentum locking. It has been proposed that p-n junctions of TIs in the quantum Hall regime can manifest unique spin dependent effects, apart from forming basic building blocks for highly functional spintronic devices. Here, for the first time we study electrostatically defined n-p-n junctions of bulk insulating topological insulator BiSbTe$_{1.25}$Se$_{1.75}$ in the quantum Hall regime. We reveal the remarkable quantization of longitudinal resistance into plateaus at 3/2 and 2/3 h/e$^2$, apart from several partially developed fractional plateaus. Theoretical modeling combining the electrostatics of the dual gated TI n-p-n junction with Landauer Buttiker formalism for transport through a network of chiral edge states explains our experimental data, while revealing remarkable differences from p-n junctions of graphene and two-dimensional electron gas systems. Our work not only opens up a route towards exotic spintronic devices but also provides a test bed for investigating the unique signatures of quantum Hall effects in topological insulators.
Spatial separation of electrons and holes in graphene gives rise to existence of plasmon waves confined to the boundary region. Theory of such guided plasmon modes within hydrodynamics of electron-hole liquid is developed. For plasmon wavelengths smaller than the size of charged domains plasmon dispersion is found to be omega ~ q^(1/4). Frequency, velocity and direction of propagation of guided plasmon modes can be easily controlled by external electric field. In the presence of magnetic field spectrum of additional gapless magnetoplasmon excitations is obtained. Our findings indicate that graphene is a promising material for nanoplasmonics.
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