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Register a new userAmplitude mode of charge density wave in TTF[Ni(dmit)2]2 observed by electronic Raman scattering
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Added by
Maximilien Cazayous
Publication date
2021
fields
Physics
and research's language is
English
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We measured the optical signature of the charge density waves (CDWs) in the multiband conductor TTF[Ni(dmit)2]2 by electronic Raman scattering. At low energies, a hump develops below 60 K. This hump is associated to the amplitude mode of the CDW with an energy around 9 meV. Raman symmetry-resolved measurements show that the CDW amplitude mode is anisotropic and that the CDW can be associated to the band nesting of Ni(dmit)2 chains.
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Vanadium disulfide (VS_{2}) attracts elevated interests for its charge-density wave (CDW) phase transition, ferromagnetism, and catalytic reactivity, but the electronic structure of monolayer has not been well understood yet. Here we report synthesis of epitaxial 1T VS_{2} monolayer on bilayer graphene grown by molecular-beam epitaxy (MBE). Angle-resolved photoemission spectroscopy (ARPES) measurements reveal that Fermi surface with six elliptical pockets centered at the M points shows gap opening at low temperature. Temperature-dependence of the gap size suggests existence of CDW phase transition above room temperature. Our observations provide important evidence to understand the strongly correlated electron physics and the related surface catalytic properties in two-dimensional transition-metal dichalcogenides (TMDCs).
Polarized Raman scattering measurements have been performed on Na0.5CoO2 single crystal from 8 to 305 K. Both the A1g and E1g phonon modes show a softening below Tc1 ~ 83 K. Additionally, the A1g phonon mode, which is forbidden in the scattering geometry of cross polarization for the triangular CoO2 layers, appears below Tc1. In contrast, the metal-insulator transition at Tc2 ~ 46 K has only secondary effect on the Raman spectra. The phonon softening and the ``forbidden Raman intensity follow closely magnetic order parameter and the gap function at the Fermi surface, indicating that the distortion of CoO6 octahedra at Tc1, instead of the Na ordering at ~350 K, is the relevant structural component of the 83 K phase transition.
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The transition metal dichalcogenide (TMD) $1T$-TaS$_{2}$ exhibits a rich set of charge density wave (CDW) orders. Recent investigations suggested that using light or electric field can manipulate the commensurate (C) CDW ground state. Such manipulations are considered to be determined by the charge carrier doping. Here we simulate by first-principles calculations the carrier doping effect on CCDW in $1T$-TaS$_{2}$. We investigate the charge doping effects on the electronic structures and phonon instabilities of $1T$ structure and analyze the doping induced energy and distortion ratio variations in CCDW structure. We found that both in bulk and monolayer $1T$-TaS$_{2}$, CCDW is stable upon electron doping, while hole doping can significantly suppress the CCDW, implying different mechanisms of such reported manipulations. Light or positive perpendicular electric field induced hole doping increases the energy of CCDW, so that the system transforms to NCCDW or similar metastable state. On the other hand, even the CCDW distortion is more stable upon in-plain electric field induced electron injection, some accompanied effects can drive the system to cross over the energy barrier from CCDW to nearly commensurate (NC) CDW or similar metastable state. We also estimate that hole doping can introduce potential superconductivity with $T_{c}$ of $6sim7$ K. Controllable switching of different states such as CCDW/Mott insulating state, metallic state, and even the superconducting state can be realized in $1T$-TaS$_{2}$, which makes the novel material have very promising applications in the future electronic devices.
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