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Register a new userElectronic structure and charge-density wave transition in monolayer VS_{2}
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Vanadium disulfide (VS_{2}) attracts elevated interests for its charge-density wave (CDW) phase transition, ferromagnetism, and catalytic reactivity, but the electronic structure of monolayer has not been well understood yet. Here we report synthesis of epitaxial 1T VS_{2} monolayer on bilayer graphene grown by molecular-beam epitaxy (MBE). Angle-resolved photoemission spectroscopy (ARPES) measurements reveal that Fermi surface with six elliptical pockets centered at the M points shows gap opening at low temperature. Temperature-dependence of the gap size suggests existence of CDW phase transition above room temperature. Our observations provide important evidence to understand the strongly correlated electron physics and the related surface catalytic properties in two-dimensional transition-metal dichalcogenides (TMDCs).
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Charge density waves in transition metal dichalcogenides have been intensively studied for their close correlation with Mott insulator, charge-transfer insulator, and superconductor. VTe2 monolayer recently comes into sight because of its prominent electron correlations and the mysterious origin of CDW orders. As a metal of more than one type of charge density waves, it involves complicated electron-electron and electron-phonon interactions. Through a scanning tunneling microscopy study, we observed triple-Q 4-by-4 and single-Q 4-by-1 modulations with significant charge and orbital separation. The triple-Q 4-by-4 order arises strongly from the p-d hybridized states, resulting in a charge distribution in agreement with the V-atom clustering model. Associated with a lower Fermi level, the local single-Q 4-by-1 electronic pattern is generated with the p-d hybridized states remaining 4-by-4 ordered. In the spectroscopic study, orbital- and atomic- selective charge-density-wave gaps with the size up to ~400 meV were resolved on the atomic scale.
Monolayer 2H-NbSe2 has recently been shown to be a 2-dimensional superconductor, with a coexisting charge-density wave (CDW). As both phenomena are intimately related to electron-lattice interaction, a natural question is how superconductivity and CDW are interrelated through electron-phonon coupling (EPC), which is important to the understanding of 2-dimensional superconductivity. This work investigates the superconductivity of monolayer NbSe2 in CDW phase using the anisotropic Migdal-Eliashberg formalism based on first principles calculations. The mechanism of the competition between and coexistence of the superconductivity and CDW is studied in detail by analyzing EPC. It is found that the intra-pocket scattering is related to superconductivity, leading to almost constant value of superconducting gaps on parts of the Fermi surface. The inter-pocket scattering is found to be responsible for CDW, leading to partial or full bandgap on the remaining Fermi surface. Recent experiment indicates that there is transitioning from regular superconductivity in thin-film NbSe2 to two-gap superconductivity in the bulk, which is shown here to have its origin in the extent of Fermi surface gapping of K and K pockets induced by CDW. Overall blue shifts of the phonons and sharp decrease of Eliashberg spectrum are found when the CDW forms.
The so-called stripe phase of the manganites is an important example of the complex behaviour of metal oxides, and has long been interpreted as the localisation of charge at atomic sites. Here, we demonstrate via resistance measurements on La_{0.50}Ca_{0.50}MnO_3 that this state is in fact a prototypical charge density wave (CDW) which undergoes collective transport. Dramatic resistance hysteresis effects and broadband noise properties are observed, both of which are typical of sliding CDW systems. Moreover, the high levels of disorder typical of manganites result in behaviour similar to that of well-known disordered CDW materials. Our discovery that the manganite superstructure is a CDW shows that unusual transport and structural properties do not require exotic physics, but can emerge when a well-understood phase (the CDW) coexists with disorder.
Emergent phenomena driven by electronic reconstructions in oxide heterostructures have been intensively discussed. However, the role of these phenomena in shaping the electronic properties in van der Waals heterointerfaces has hitherto not been established. By reducing the material thickness and forming a heterointerface, we find two types of charge-ordering transitions in monolayer VSe2 on graphene substrates. Angle-resolved photoemission spectroscopy (ARPES) uncovers that Fermi-surface nesting becomes perfect in ML VSe2. Renormalization group analysis confirms that imperfect nesting in three dimensions universally flows into perfect nesting in two dimensions. As a result, the charge density wave transition temperature is dramatically enhanced to a value of 350 K compared to the 105 K in bulk VSe2. More interestingly, ARPES and scanning tunneling microscopy measurements confirm an unexpected metal-insulator transition at 135 K, driven by lattice distortions. The heterointerface plays an important role in driving this novel metal-insulator transition in the family of monolayered transition metal dichalcogenides.
The transition metal dichalcogenide (TMD) $1T$-TaS$_{2}$ exhibits a rich set of charge density wave (CDW) orders. Recent investigations suggested that using light or electric field can manipulate the commensurate (C) CDW ground state. Such manipulations are considered to be determined by the charge carrier doping. Here we simulate by first-principles calculations the carrier doping effect on CCDW in $1T$-TaS$_{2}$. We investigate the charge doping effects on the electronic structures and phonon instabilities of $1T$ structure and analyze the doping induced energy and distortion ratio variations in CCDW structure. We found that both in bulk and monolayer $1T$-TaS$_{2}$, CCDW is stable upon electron doping, while hole doping can significantly suppress the CCDW, implying different mechanisms of such reported manipulations. Light or positive perpendicular electric field induced hole doping increases the energy of CCDW, so that the system transforms to NCCDW or similar metastable state. On the other hand, even the CCDW distortion is more stable upon in-plain electric field induced electron injection, some accompanied effects can drive the system to cross over the energy barrier from CCDW to nearly commensurate (NC) CDW or similar metastable state. We also estimate that hole doping can introduce potential superconductivity with $T_{c}$ of $6sim7$ K. Controllable switching of different states such as CCDW/Mott insulating state, metallic state, and even the superconducting state can be realized in $1T$-TaS$_{2}$, which makes the novel material have very promising applications in the future electronic devices.
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