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Register a new userExploiting the wide dynamic range of Silicon photomultipliers for Quantum Optics applications
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Silicon photomultipliers are photon-number-resolving detectors endowed with hundreds of cells enabling them to reveal high-populated quantum optical states. In this paper, we address such a goal by showing the possible acquisition strategies that can be adopted and discussing their advantages and limitations. In particular, we determine the best acquisition solution in order to properly reveal the nature, either classical or nonclassical, of mesoscopic quantum optical states.
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We develop a polarization characterization platform for optical devices in free-space quantum communications. We demonstrate an imaging polarimeter, which analyzes both incident polarization states and the angle of incidence, attached to a six-axis collaborative robot arm, enabling polarization characterization at any position and direction with consistent precision. We present a detailed description of each subsystem including the calibration and polarization-test procedure, and analyze polarization-measurement errors caused by imperfect orientations of the robot arm using a Mueller-matrix model of polarimeters at tilt incidence. We perform a proof-of-principle experiment for an angle-dependent polarization test for a commercial silver-coated mirror for which the polarization states of the reflected light can be accurately calculated. Quantitative agreement between the theory and experiment validates our methodology. We demonstrate the polarization test for a 20.3 cm lens designed for a quantum optical transmitter in Canadas Quantum Encryption and Science Satellite (QEYSSat) mission.
AMIGA (Auger Muons and Infill for the Ground Array) is an upgrade of the Pierre Auger Observatory designed to extend its energy range of detection and to directly measure the muon content of the cosmic ray primary particle showers. The array will be formed by an infill of surface water-Cherenkov detectors associated with buried scintillation counters employed for muon counting. Each counter is composed of three scintillation modules, with a 10 m$^2$ detection area per module. In this paper, a new generation of detectors, replacing the current multi-pixel photomultiplier tube (PMT) with silicon photo sensors (aka. SiPMs), is proposed. The selection of the new device and its front-end electronics is explained. A method to calibrate the counting system that ensures the performance of the detector is detailed. This method has the advantage of being able to be carried out in a remote place such as the one where the detectors are deployed. High efficiency results, i.e. 98 % efficiency for the highest tested overvoltage, combined with a low probability of accidental counting ($sim$2 %), show a promising performance for this new system.
We report on high-efficiency superconducting nanowire single-photon detectors based on amorphous WSi and optimized at 1064 nm. At an operating temperature of 1.8 K, we demonstrated a 93% system detection efficiency at this wavelength with a dark noise of a few counts per second. Combined with cavity-enhanced spontaneous parametric down-conversion, this fiber-coupled detector enabled us to generate narrowband single photons with a heralding efficiency greater than 90% and a high spectral brightness of $0.6times10^4$ photons/(s$cdot$mW$cdot$MHz). Beyond single-photon generation at large rate, such high-efficiency detectors open the path to efficient multiple-photon heralding and complex quantum state engineering.
We demonstrate a quantum random number generator based on the random nature of the phase difference between two independent laser sources. The speed of random bit generation is determined by the photodetector bandwidth and the linewidth of the lasers used. The system implemented is robust and generates a probability distribution of quantum origin which is intrinsically uniform and thus in principle needs no randomness extraction. The phase is measured with telecom equipment routinely used for high capacity coherent optical communications, which allows to keep track of the phase drift of the lasers and is readily available in the telecommunication industry.
We have used Molecular Beam Epitaxy (MBE)-based delta doping technology to demonstrate near 100% internal quantum efficiency (QE) on silicon electron-multiplied Charge Coupled Devices (EMCCDs) for single photon counting detection applications. Furthermore, we have used precision techniques for depositing antireflection (AR) coatings by employing Atomic Layer Deposition (ALD) and demonstrated over 50% external QE in the far and near-ultraviolet in megapixel arrays. We have demonstrated that other device parameters such as dark current are unchanged after these processes. In this paper, we report on these results and briefly discuss the techniques and processes employed.
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