Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userRealization of AlSb in the double layer honeycomb structure: a robust new class of two-dimensional material
414
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Exploring new two-dimensional (2D) van der Waals (vdW) systems is at the forefront of materials physics. Here, through molecular beam epitaxy on graphene-covered SiC(0001), we report successful growth of AlSb in the double-layer honeycomb (DLHC) structure, a 2D vdW material which has no direct analogue to its 3D bulk and is predicted kinetically stable when freestanding. The structural morphology and electronic structure of the experimental 2D AlSb are characterized with spectroscopic imaging scanning tunneling microscopy and cross-sectional imaging scanning transmission electron microscopy, which compare well to the proposed DLHC structure. The 2D AlSb exhibits a bandgap of 0.93 eV versus the predicted 1.06 eV, which is substantially smaller than the 1.6 eV of bulk. We also attempt the less-stable InSb DLHC structure; however, it grows into bulk islands instead. The successful growth of a DLHC material here opens the door for the realization of a large family of novel 2D DLHC traditional semiconductors with unique excitonic, topological, and electronic properties.
rate research
Read More
Motivated by the recent synthesis of two-dimensional monolayer AlSb, we theoretically investigate its ground state and electronic properties using the first-principles calculations coupled with Bethe-Salpeter equation. An excitonic instability is revealed as a result of larger exciton binding energy than the corresponding one-electron energy gap by $sim$0.1 eV, which is an indicative of a many-body ground state accompanied by spontaneous exciton generation. Including the spin-orbit coupling is proven to be a must to correctly predict the ground state. At room temperature, the two-dimensional monolayer AlSb is a direct gap semiconductor with phonon-limited electron and hole mobilities both around 1700 cm$^2$/V$cdot$s. These results show that monolayer AlSb may provide a promising platform for realization of the excitonic insulator and for applications in the next-generation electronic devices.
The Kitaev model predicts that quantum spin liquids (QSLs) will form at low temperatures under certain special conditions, and materials hosting the QSL state are frequently sought. The layered honeycomb lattice material {alpha}-RuCl3 has emerged as a prime candidate for displaying the Kitaev QSL state. Here we describe a new polymorph of RuI3 with a layered honeycomb lattice structure, synthesized at moderately high pressures and stable under ambient conditions. Preliminary characterization reveals metallic, paramagnetic behavior, the absence of long-range magnetic order down to 0.35 K and an unusually large T-linear contribution to the heat capacity at low temperatures. We propose that this RuI3 phase, with a layered honeycomb lattice and strong spin-orbit coupling, provides a new route for the characterization of quantum materials.
Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When the underlying material exhibits additional charge or spin order, the resistive states can be directly coupled, further allowing for electrical control of the collective phases. Here, we report the observation of abrupt, memristive switching of tunneling current in nanoscale junctions of ultrathin CrI$_3$, a natural layer antiferromagnet. The coupling to spin order enables both tuning of the resistance hysteresis by magnetic field, and electric-field switching of magnetization even in multilayer samples.
We propose a new concept of two-dimensional (2D) Dirac semiconductor which is characterized by the emergence of fourfold degenerate band crossings near the band edge and provide a generic approach to realize this novel semiconductor in the community of material science. Based on the first-principle calculations and symmetry analysis, we discover recently synthesised triple-layer (TL)-BiOS2 is such Dirac semiconductor that features Dirac cone at X/Y point, protected by nonsymmorphic symmetry. Due to sandwich-like structure, each Dirac fermion in TL-BiOS2 can be regarded as a combination of two Weyl fermions with opposite chiralities, degenerate in momentum-energy space but separated in real space. Such Dirac semiconductor carries layer-dependent helical spin textures that never been reported before. Moreover, novel topological phase transitions are flexibly achieved in TL-BiOS2: (i) an vertical electric field can drive it into Weyl semiconductor with switchable spin polarization direction, (ii) an extensive strain is able to generate ferroelectric polarization and actuate it into Weyl nodal ring around X point and into another type of four-fold degenerate point at Y point. Our work extends the Dirac fermion into semiconductor systems and provides a promising avenue to integrate spintronics and optoelectronics in topological materials.
Atomically thin, two-dimensional (2D) indium selenide (InSe) has attracted considerable attention due to large tunability in the band gap (from 1.4 to 2.6 eV) and high carrier mobility. The intriguingly high dependence of band gap on layer thickness may lead to novel device applications, although its origin remains poorly understood, and generally attributed to quantum confinement effect. In this work, we demonstrate via first-principles calculations that strong interlayer coupling may be mainly responsible for this phenomenon, especially in the fewer-layer region, and it could also be an essential factor influencing other material properties of {beta}-InSe and {gamma}-InSe. Existence of strong interlayer coupling manifests itself in three aspects: (i) indirect-to-direct band gap transitions with increasing layer thickness; (ii) fan-like frequency diagrams of the shear and breathing modes of few-layer flakes; (iii) strong layer-dependent carrier mobilities. Our results indicate that multiple-layer InSe may be deserving of attention from FET-based technologies and also an ideal system to study interlayer coupling, possibly inherent in other 2D materials.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
