No Arabic abstract
Sudden ionisation of a relatively large molecule can initiate a correlation-driven process dubbed charge migration, where the electron density distribution is expected to rapidly change. Capturing this few-femtosecond/attosecond charge redistribution represents the real-time observation of the electron correlation in the molecule. So far, there has been no experimental evidence of this process. Here we report on a time-resolved study of the correlation-driven charge migration process occurring in the bio-relevant molecule adenine after ionisation by a 15-35 eV attosecond pulse . We find that, the production of intact doubly charged adenine - via a shortly-delayed laser-induced second ionisation event - represents the signature of a charge inflation mechanism resulting from the many-body excitation. This conclusion is supported by first-principles time-dependent simulations. Our findings opens new important perspectives for the control of the molecular reactivity at the electronic timescale.
We investigate theoretically charge migration following prompt double ionization of a polyatomic molecule (C$_2$H$_4$BrI) and find that for double ionization, correlation-driven charge migration appears to be particularly prominent, i.e., we observe exceptionally rich dynamics solely driven by the electron-electron interaction even in the situation when the electrons are emitted from outer-valence orbitals. These strongly correlated electron dynamics are witnessed in the theoretically determined time-resolved transient absorption cross section. Strikingly, features in the cross section can be traced back to electron hole populations and time-dependent partial charges and hence, can be interpreted with surprising ease. Remarkably, by taking advantage of element specific core-to-valence transitions, the hole population dynamics can be followed both in time and space. With this, not only do we report the high relevance of correlation-driven charge migration following double ionization but our findings also highlight the outstanding role of attosecond transient absorption spectroscopy (ATAS) as one of the most promising techniques for monitoring ultrafast electron dynamics in complex molecular systems.
The possibility of suddenly ionized molecules undergoing extremely fast electron hole dynamics prior to significant structural change was first recognized more than 20 years ago and termed charge migration. The accurate probing of ultrafast electron hole dynamics requires measurements that have both sufficient temporal resolution and can detect the localization of a specific hole within the molecule. We report an investigation of the dynamics of inner valence hole states in isopropanol where we use an x-ray pump/x-ray probe experiment, with site and state-specific probing of a transient hole state localized near the oxygen atom in the molecule, together with an ab initio theoretical treatment. We record the signature of transient hole dynamics and make the first observation of dynamics driven by frustrated Auger-Meitner transitions. We verify that the hole lifetime is consistent with our theoretical prediction. This state-specific measurement paves the way to widespread application for observations of transient hole dynamics localized in space and time in molecules and thus to charge transfer phenomena that are fundamental in chemical and material physics.
The spin transition in LaCoO$_3$ has been investigated within the density-functional theory + dynamical mean-field theory formalism using continuous time quantum Monte Carlo. Calculations on the experimental rhombohedral atomic structure with two Co sites per unit cell show that an independent treatment of the Co atoms results in a ground state with strong charge fluctuations induced by electronic correlations. Each atom shows a contribution from either a $d^5$ or a $d^7$ state in addition to the main $d^6$ state. These states play a relevant role in the spin transition which can be understood as a low spin-high spin (LS-HS) transition with significant contributions ($sim$ $10$ %) to the LS and HS states of $d^5$ and $d^7$ states respectively. A thermodynamic analysis reveals a significant kinetic energy gain through introduction of charge fluctuations, which in addition to the potential energy reduction lowers the total energy of the system.
We thoroughly examine the ground state of the triangular lattice of Pb on Si(111) using scanning tunneling microscopy. We detect charge-order, accompanied by a subtle structural reconstruction. Applying the extended variational cluster approach we map out the phase diagram as a function of local and non-local Coulomb interactions. Comparing the experimental data with the theoretical modeling leads us to conclude that electron correlations are the driving force of the charge-ordered state in Pb/Si(111), rather than Fermi surface nesting. These results resolve the discussion about the origin of the well known $3times 3$ reconstruction forming below $86,$K. By exploiting the tunability of correlation strength, hopping parameters and bandfilling, this material class represents a promising platform to search for exotic states of matter, in particular, for chiral topological superconductivity.
Topological insulators (TIs) host unusual surface states with Dirac dispersion and helical spin texture and hold high potentials for novel applications in spintronics and quantum computing. Control of the chemical potential in these materials is challenging but crucial to realizing the hotly pursued exotic physics, including efficient spin generation1,2, Majorana Fermions3-5, and exciton condensation6,7. Here we report a simple and effective method that can in-situ tune the chemical potential of single-crystal Bi2-xSbxSe3 nanoribbons, with a magnitude significantly larger than traditional electrostatic gating. An electric field parallel to a device channel can shift the chemical potential across the Dirac point, both inside and outside the channel. We attribute this non-local reversible modulation of chemical potential to electric-field-induced charge hopping among defect states, further supported by photocurrent mapping. Our approach enables engineering chemical potential distributions in TIs and opens up tremendous opportunities for investigating fundamental transport mechanisms of charge and composite particles in these materials.