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Register a new userEnhancement of spin-orbit coupling in Dirac semimetal Cd$_{3}$As$_{2}$ films by Sb-doping
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We present a study on magnetotransport in films of the topological Dirac semimetal Cd$_{3}$As$_{2}$ doped with Sb grown by molecular beam epitaxy. In our weak antilocalization analysis, we find a significant enhancement of the spin-orbit scattering rate, indicating that Sb doping leads to a strong increase of the pristine band-inversion energy. We discuss possible origins of this large enhancement by comparing Sb-doped Cd$_{3}$As$_{2}$ with other compound semiconductors. Sb-doped Cd$_{3}$As$_{2}$ will be a suitable system for further investigations and functionalization of topological Dirac semimetals.
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To probe the charge scattering mechanism in Cd$_{3}$As$_{2}$ single crystal, we have analyzed the temperature and magnetic field dependence of the Seebeck coefficient ($S$). The large saturation value of $S$ at high field clearly demonstrates the linear energy dispersion of three-dimensional Dirac fermion. A wide tunability of the charge scattering mechanism has been realized by varying the strength of the magnetic field and carrier density via In doping. With the increase in magnetic field, the scattering time crosses over from being nearly energy independent to a regime of linear dependence. On the other hand, the scattering time enters into the inverse energy-dependent regime and the Fermi surface strongly modifies with 2% In doping at Cd site. With further increase in In content from 2 to 4%, we did not observe any Shubnikov-de Haas oscillation up to 9 T field, but the magnetoresistance is found to be quite large as in the case of undoped sample.
Cd$_3$As$_2$ is one of the prototypical topological Dirac semimetals. Here, we manipulate the band inversion responsible for the emergence of Dirac nodes by alloying Cd$_3$As$_2$ with topologically trivial Zn$_3$As$_2$. We observe the expected topological phase transition around a Zn concentration of $xsim 1$ while the carrier density monotonically decreases as $x$ is increased. For larger $x$, the thermoelectric figure of merit exhibits comparably large values exceeding 0.3 at room temperature, due to the combined effects of a strong enhancement of the thermopower, an only moderate increase of the resistivity, and a suppression of the thermal conductivity. Complementary quantum-oscillation data and optical-conductivity measurements allow to infer that the enhanced thermoelectric performance is due to a flattening of the band structure in the higher-$x$ region in Cd$_{3-x}$Zn$_x$As$_2$.
We demonstrate an enhancement of the spin-orbit coupling in silicon (Si) thin films by doping with bismuth (Bi), a heavy metal, using ion implantation. Quantum corrections to conductance at low temperature in phosphorous-doped Si before and after Bi implantation is measured to probe the increase of the spin-orbit coupling, and a clear modification of magnetoconductance signals is observed: Bi doping changes magnetoconductance from weak localization to the crossover between weak localization and weak antilocalization. The elastic diffusion length, phase coherence length and spin-orbit coupling length in Si with and without Bi implantation are estimated, and the spin-orbit coupling length after the Bi doping becomes the same order of magnitude (Lso = 54 nm) with the phase coherence length (L{phi} = 35 nm) at 2 K. This is an experimental proof that the spin-orbit coupling strength in Si thin film is tunable by doping with heavy metals.
We report magnetotransport properties of BaZnBi$_{2}$ single crystals. Whereas electronic structure features Dirac states, such states are removed from the Fermi level by spin-orbit coupling (SOC) and consequently electronic transport is dominated by the small hole and electron pockets. Our results are consistent with three dimensional (3D) but also with quasi two dimensional (2D) portions of the Fermi surface. The spin-orbit coupling-induced gap in Dirac states is much larger when compared to isostructural SrMnBi$_{2}$. This suggests that not only long range magnetic order but also mass of the alkaline earth atoms A in ABX$_{2}$ (A = alkaine earth, B = transition metal and X=Bi/Sb) are important for the presence of low-energy states obeying the relativistic Dirac equation at the Fermi surface
Unconventional surface states protected by non-trivial bulk orders are sources of various exotic quantum transport in topological materials. One prominent example is the unique magnetic orbit, so-called Weyl orbit, in topological semimetals where two spatially separated surface Fermi-arcs are interconnected across the bulk. The recent observation of quantum Hall states in Dirac semimetal Cd3As2 bulks have drawn attention to the novel quantization phenomena possibly evolving from the Weyl orbit. Here we report surface quantum oscillation and its evolution into quantum Hall states in Cd3As2 thin film samples, where bulk dimensionality, Fermi energy, and band topology are systematically controlled. We reveal essential involvement of bulk states in the quantized surface transport and the resultant quantum Hall degeneracy depending on the bulk occupation. Our demonstration of surface transport controlled in film samples also paves a way for engineering Fermi-arc-mediated transport in topological semimetals.
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