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The continuing improvement in quantum efficiency (above 90% for single visible photons), reduction in noise (below 1 electron per pixel), and shrink in pixel pitch (less than 1 micron) motivate billion-pixel X-ray cameras (BiPC-X) based on commercial CMOS imaging sensors. We describe BiPC-X designs and prototype construction based on flexible tiling of commercial CMOS imaging sensors with millions of pixels. Device models are given for direct detection of low energy X-rays ($<$ 10 keV) and indirect detection of higher energies using scintillators. Modified Birkss law is proposed for light-yield nonproportionality in scintillators as a function of X-ray energy. Single X-ray sensitivity and spatial resolution have been validated experimentally using laboratory X-ray source and the Argonne Advanced Photon Source. Possible applications include wide field-of-view (FOV) or large X-ray aperture measurements in high-temperature plasmas, the state-of-the-art synchrotron, X-ray Free Electron Laser (XFEL), and pulsed power facilities.
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A vacuum-compatible photon-counting hybrid pixel detector has been installed in the ultra-high vacuum (UHV) reflectometer of the four-crystal monochromator (FCM) beamline of the Physikalisch-Technische Bundesanstalt (PTB) at the electron storage ring BESSY II in Berlin, Germany. The setup is based on the PILATUS3 100K module. The detector can be used in the entire photon energy range accessible at the beamline from 1.75 to 10 keV. Complementing the already installed vacuum-compatible PILATUS 1M detector used for small-angle scattering (SAXS) and grazing incidence SAXS (GISAXS), it is possible to access larger scattering angles. The water-cooled module is located on the goniometer arm and can be positioned from -90{deg} to 90{deg} with respect to the incoming beam at a distance of about 200 mm from the sample. To perform absolute scattering experiments the linearity, homogeneity and the angular dependence of the quantum efficiency, including their relative uncertainties, have been investigated. In addition, first results of the performance in wide-angle X-ray scattering (WAXS), X-ray diffraction (XRD) and X-ray reflectometry (XRR) are presented.
The color X-ray camera (SLcam) is a full-field single photon imager. As stand-alone camera, it is applicable for energy and space-resolved X-ray detection measurements. The exchangeable poly-capillary optics in front of a beryllium entrance window conducts X-ray photons from the probe to distinguished energy dispersive pixels on a pnCCD. The dedicated software enables the acquisition and the online processing of the spectral data for all 69696 pixels, leading to a real-time visualization of the element distribution in a sample. No scanning system is employed. A first elemental composition image of the sample is visible within minutes while statistics is improving in the course of time. Straight poly-capillary optics allows for 1:1 imaging with a space resolution of 50 um and no limited depth of sharpness, ideal to map uneven objects. Using conically shaped optics, a magnification of 6 times was achieved with a space resolution of 10 um. We present a measurement with a laboratory source showing the camera capability to perform fast full-field X-ray Fluorescence (FF-XRF) imaging with an easy, portable and modular setup.
The performance of hybrid GaAs pixel detectors as X-ray imaging sensors were investigated at room temperature. These hybrids consist of 300 mu-m thick GaAs pixel detectors, flip-chip bonded to a CMOS Single Photon Counting Chip (PCC). This chip consists of a matrix of 64 x 64 identical square pixels (170 mu-m x 170 mu-m) and covers a total area of 1.2 cm**2. The electronics in each cell comprises a preamplifier, a discriminator with a 3-bit threshold adjust and a 15-bit counter. The detector is realized by an array of Schottky diodes processed on semi-insulating LEC-GaAs bulk material. An IV-charcteristic and a detector bias voltage scan showed that the detector can be operated with voltages around 200 V. Images of various objects were taken by using a standard X-ray tube for dental diagnostics. The signal to noise ratio (SNR) was also determined. The applications of these imaging systems range from medical applications like digital mammography or dental X-ray diagnostics to non destructive material testing (NDT). Because of the separation of detector and readout chip, different materials can be investigated and compared.
We present ECLAIRs, the Gamma-ray burst (GRB) trigger camera to fly on-board the Chinese-French mission SVOM. ECLAIRs is a wide-field ($sim 2$,sr) coded mask camera with a mask transparency of 40% and a 1024 $mathrm{cm}^2$ detection plane coupled to a data processing unit, so-called UGTS, which is in charge of locating GRBs in near real time thanks to image and rate triggers. We present the instrument science requirements and how the design of ECLAIRs has been optimized to increase its sensitivity to high-redshift GRBs and low-luminosity GRBs in the local Universe, by having a low-energy threshold of 4 keV. The total spectral coverage ranges from 4 to 150 keV. ECLAIRs is expected to detect $sim 200$ GRBs of all types during the nominal 3 year mission lifetime. To reach a 4 keV low-energy threshold, the ECLAIRs detection plane is paved with 6400 $4times 4~mathrm{mm}^2$ and 1 mm-thick Schottky CdTe detectors. The detectors are grouped by 32, in 8x4 matrices read by a low-noise ASIC, forming elementary modules called XRDPIX. In this paper, we also present our current efforts to investigate the performance of these modules with their front-end electronics when illuminated by charged particles and/or photons using radioactive sources. All measurements are made in different instrument configurations in vacuum and with a nominal in-flight detector temperature of $-20^circ$C. This work will enable us to choose the in-flight configuration that will make the best compromise between the science performance and the in-flight operability of ECLAIRs. We will show some highlights of this work.
The X-ray SOI pixel sensor onboard the FORCE satellite will be placed in the low earth orbit and will consequently suffer from the radiation effects mainly caused by geomagnetically trapped cosmic-ray protons. Based on previous studies on the effects of radiation on SOI pixel sensors, the positive charges trapped in the oxide layer significantly affect the performance of the sensor. To improve the radiation hardness of the SOI pixel sensors, we introduced a double-SOI (D-SOI) structure containing an additional middle Si layer in the oxide layer. The negative potential applied on the middle Si layer compensates for the radiation effects, due to the trapped positive charges. Although the radiation hardness of the D-SOI pixel sensors for applications in high-energy accelerators has been evaluated, radiation effects for astronomical application in the D-SOI sensors has not been evaluated thus far. To evaluate the radiation effects of the D-SOI sensor, we perform an irradiation experiment using a 6-MeV proton beam with a total dose of ~ 5 krad, corresponding to a few tens of years of in-orbit operation. This experiment indicates an improvement in the radiation hardness of the X- ray D-SOI devices. On using an irradiation of 5 krad on the D-SOI device, the energy resolution in the full-width half maximum for the 5.9-keV X-ray increases by 7 $pm$ 2%, and the chip output gain decreases by 0.35 $pm$ 0.09%. The physical mechanism of the gain degradation is also investigated; it is found that the gain degradation is caused by an increase in the parasitic capacitance due to the enlarged buried n-well.
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