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Register a new userNeutron diffraction study of magnetism in van der Waals layered MnBi$_{2n}$Te$_{3n+1}$
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Two-dimensional van der Waals MnBi$_{2n}$Te$_{3n+1}$ (n = 1, 2, 3, 4) compounds have been recently found to be intrinsic magnetic topological insulators rendering quantum anomalous Hall effect and diverse topological states. Here, we summarize and compare the crystal and magnetic structures of this family, and discuss the effects of chemical composition on their magnetism. We found that a considerable fraction of Bi occupies at the Mn sites in MnBi$_{2n}$Te$_{3n+1}$ (n = 1, 2, 3, 4) while Mn is no detectable at the non-magnetic atomic sites within the resolution of neutron diffraction experiments. The occupancy of Mn monotonically decreases with the increase of n. The polarized neutron diffraction on the representative MnBi$_{4}$Te$_{7}$ reveals that its magnetization density is exclusively accumulated at the Mn site, in good agreement with the results from the unpolarized neutron diffraction. The defects of Bi at the Mn site naturally explain the continuously reduced saturated magnetic moments from n = 1 to n = 4. The experimentally estimated critical exponents of all the compounds generally suggest a three-dimensional character of magnetism. Our work provides material-specified structural parameters that may be useful for band structure calculations to understand the observed topological surface states and for designing quantum magnetic materials through chemical doping.
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We propose MnBi$_{2n}$Te$_{3n+1}$ as a magnetically tunable platform for realizing various symmetry-protected higher-order topology. Its canted antiferromagnetic phase can host exotic topological surface states with a Mobius twist that are protected by nonsymmorphic symmetry. Moreover, opposite surfaces hosting Mobius fermions are connected by one-dimensional chiral hinge modes, which offers the first material candidate of a higher-order topological Mobius insulator. We uncover a general mechanism to feasibly induce this exotic physics by applying a small in-plane magnetic field to the antiferromagnetic topological insulating phase of MnBi$_{2n}$Te$_{3n+1}$, as well as other proposed axion insulators. For other magnetic configurations, two classes of inversion-protected higher-order topological phases are ubiquitous in this system, which both manifest gapped surfaces and gapless chiral hinge modes. We systematically discuss their classification, microscopic mechanisms, and experimental signatures. Remarkably, the magnetic-field-induced transition between distinct chiral hinge mode configurations provides an effective topological magnetic switch.
Fe$_{1+x}$Te is a two dimensional van der Waals antiferromagnet that becomes superconducting on anion substitution on the Te site. The parent phase of Fe$_{1+x}$Te is sensitive to the amount of interstitial iron situated between the iron-tellurium layers displaying collinear magnetic order coexisting with low temperature metallic resistivity for small concentrations of interstitial iron $x$ and helical magnetic order for large values of $x$. While this phase diagram has been established through scattering [see for example E. E. Rodriguez $textit{et al.}$ Phys. Rev. B ${bf{84}}$, 064403 (2011) and S. Rossler $textit{et al.}$ Phys. Rev. B ${bf{84}}$, 174506 (2011)], recent scanning tunnelling microscopy measurements [C. Trainer $textit{et al.}$ Sci. Adv. ${bf{5}}$, eaav3478 (2019)] have observed a different magnetic structure for small interstitial iron concentrations $x$ with a significant canting of the magnetic moments along the crystallographic $c$ axis of $theta$=28 $pm$ 3$^{circ}$. In this paper, we revisit the magnetic structure of Fe$_{1.09}$Te using spherical neutron polarimetry and scanning tunnelling microscopy to search for this canting in the bulk phase and compare surface and bulk magnetism. The results show that the bulk magnetic structure of Fe$_{1.09}$Te is consistent with collinear in-plane order ($theta=0$ with an error of $sim$ 5$^{circ}$). Comparison with scanning tunnelling microscopy on a series of Fe$_{1+x}$Te samples reveals that the surface exhibits a magnetic surface reconstruction with a canting angle of the spins of $theta=29.8^{circ}$. We suggest that this is a consequence of structural relaxation of the surface layer resulting in an out-of-plane magnetocrystalline anisotropy. The magnetism in Fe$_{1+x}$Te displays different properties at the surface when the symmetry constraints of the bulk are removed.
Manipulating quantum state via electrostatic gating has been intriguing for many model systems in nanoelectronics. When it comes to the question of controlling the electron spins, more specifically, the magnetism of a system, tuning with electric field has been proven to be elusive. Recently, magnetic layered semiconductors have attracted much attention due to their emerging new physical phenomena. However, challenges still remain in the demonstration of a gate controllable magnetism based on them. Here, we show that, via ionic gating, strong field effect can be observed in few-layered semiconducting Cr$_{2}$Ge$_{2}$Te$_{6}$ devices. At different gate doping, micro-area Kerr measurements in the studied devices demonstrate tunable magnetization loops below the Curie temperature, which is tentatively attributed to the moment re-balance in the spin-polarized band structure. Our findings of electric-field controlled magnetism in van der Waals magnets pave the way for potential applications in new generation magnetic memory storage, sensors, and spintronics.
The interplay of magnetism and topology is a key research subject in condensed matter physics and material science, which offers great opportunities to explore emerging new physics, like the quantum anomalous Hall (QAH) effect, axion electrodynamics and Majorana fermions. However, these exotic physical effects have rarely been realized in experiment, due to the lacking of suitable working materials. Here we predict that van der Waals layered MnBi$_2$Te$_4$-family materials show two-dimensional (2D) ferromagnetism in the single layer and three-dimensional (3D) $A$-type antiferromagnetism in the bulk, which could serve as a next-generation material platform for the state-of-art research. Remarkably, we predict extremely rich topological quantum effects with outstanding features in an experimentally available material MnBi$_2$Te$_4$, including a 3D antiferromagnetic topological insulator with the long-sought topological axion states, the type-II magnetic Weyl semimetal (WSM) with simply one pair of Weyl points, and the high-temperature intrinsic QAH effect. These striking predictions, if proved experimentally, could profoundly transform future research and technology of topological quantum physics.
Layered van~der~Waals materials of the family TaTMTe$_4$ (TM=Ir, Rh, Ru) are showing very interesting electronic properties. Here we report the synthesis, crystal growth and structural characterization of TaIrTe$_4$, TaRhTe$_4$, TaIr$_{1-x}$Rh$_{x}$Te$_4$ ($x = 0.06$; 0.14; 0.78; 0.92) and Ta$_{1+x}$Ru$_{1-x}$Te$_4$ single crystals. For Ta$_{1+x}$Ru$_{1-x}$Te$_4$ off-stoichiometry is shown. X-ray powder diffraction confirms that TaRhTe4 is isostructural to TaIrTe4. We show that all these compounds are metallic with diamagnetic behavior. Ta$_{1.26(2)}$Ru$_{0.75(2)}$Te$_{4.000(8)}$ exhibits an upturn in the resistivity at low temperatures which is strongly field dependent. Below $T approx 4$K we observed signatures of the superconductivity in the TaIr$_{1-x}$Rh$_{x}$Te$_4$ compounds for $x = 0.92$. Magnetotransport measurements on all samples show weak magnetoresistance (MR) field dependence that is typically quadratic-in-field. However, for TaIr$_{1-x}$Rh$_{x}$Te$_4$ with $xapprox 0.78$, the MR has a linear term dominating in low fields that indicates the presence of Dirac cones in the vicinity of the Fermi energy. For TaRhTe$_4$ series the MR is almost isotropic. We have performed electronic structure calculations for isostructural TaIrTe$_4$ and TaRhTe$_4$ together with the projected total density of states. The main difference is appearance of the Rh-band close to the Fermi level.
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