Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userPiezo-optic effect of high-harmonic generation in semiconductors
66
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We theoretically investigate the piezo-optic effect of high-harmonic generation (HHG) in shear-strained semiconductors. By focusing on a typical semiconductor, GaAs, we show that there is optical activity, meaning different responses to right-handed and left-handed elliptically polarized electric fields. We also show that this optical activity is more pronounced for higher harmonics whose perturbative order exceeds the band-gap energy. These findings point to a useful pathway for strain engineering of nonlinear optics to control the reciprocity of HHG.
rate research
Read More
Second-order nonlinear effects, such as second-harmonic generation, can be strongly enhanced in nanofabricated photonic materials when both fundamental and harmonic frequencies are spatially and temporally confined. Practically designing low-volume and doubly resonant nanoresonators in conventional semiconductor compounds is challenging owing to their intrinsic refractive index dispersion. In this work we review a recently developed strategy to design doubly resonant nanocavities with low mode volume and large quality factor by localized defects in a photonic crystal structure. We build on this approach by applying an evolutionary optimisation algorithm in connection with Maxwell equations solvers, showing that the proposed design recipe can be applied to any material platform. We explicitly calculate the second-harmonic generation efficiency for doubly resonant photonic crystal cavity designs in typical III-V semiconductor materials, such as GaN and AlGaAs, targeting a fundamental harmonic at telecom wavelengths, and fully accounting for the tensor nature of the respective nonlinear susceptibilities. These results may stimulate the realisation of small footprint photonic nanostructures in leading semiconductor material platforms to achieve unprecedented nonlinear efficiencies.
We study second and third harmonic generation in centrosymmetric semiconductors at visible and UV wavelengths in bulk and cavity environments. Second harmonic generation is due to a combination of symmetry breaking, the magnetic portion of the Lorentz force, and quadrupolar contributions that impart peculiar features to the angular dependence of the generated signals, in analogy to what occurs in metals. The material is assumed to have a non-zero, third order nonlinearity that gives rise to most of the third harmonic signal. Using the parameters of bulk Silicon we predict that cavity environments can significantly modify second harmonic generation (390nm) with dramatic improvements for third harmonic generation (266nm). This occurs despite the fact that the harmonics may be tuned to a wavelength range where the dielectric function of the material is negative: a phase locking mechanism binds the pump to the generated signals and inhibits their absorption. These results point the way to novel uses and flexibility of materials like Silicon as nonlinear media in the visible and UV ranges.
High-harmonic generation (HHG), which is generation of multiple optical harmonic light, is an unconventional nonlinear optical phenomenon beyond perturbation regime. HHG, which was initially observed in gaseous media, has recently been demonstrated in solid state materials. How to control the extreme nonlinear optical phenomena is a challenging subject. Compared to atomic gases, solid state materials have advantages in controlling electronic structures and carrier injection. Here, we demonstrate control of HHG by tuning electronic structure and carrier injection using single-walled carbon nanotubes (SWCNTs). We reveal systematic changes in the high-harmonic spectra of SWCNTs with a series of electronic structures from a metal to a semiconductor. We demonstrate enhancement or reduction of harmonic generation by more than one order of magnitude by tuning electron and hole injection into the semiconductor SWCNTs through electrolyte gating. These results open a way to control HHG within the concept of field effect transistor devices.
We study nonlinear effects in two-dimensional photonic metasurfaces supporting topologically-protected helical edge states at the nanoscale. We observe strong third-harmonic generation mediated by optical nonlinearities boosted by multipolar Mie resonances of silicon nanoparticles. Variation of the pump-beam wavelength enables independent high-contrast imaging of either bulk modes or spin-momentum-locked edge states. We demonstrate topology-driven tunable localization of the generated harmonic fields and map the pseudospin-dependent unidirectional waveguiding of the edge states bypassing sharp corners. Our observations establish dielectric metasurfaces as a promising platform for the robust generation and transport of photons in topological photonic nanostructures.
Using dynamical Hartree-Fock mean-field theory, we study the high-harmonic generation (HHG) in the fullerene molecules C$_{60}$ and C$_{70}$ under strong pump wave driving. We consider a strong-field regime and show that the output harmonic radiation exhibits multiple plateaus, whose borders are defined by the molecular excitonic lines and cutoff energies within each plateau scale linearly with the field strength amplitude. In contrast to atomic cases for the fullerene molecule, with the increase of the pump wave photon energy the cutoff harmonic energy is increased. We also show that with the increase of the electron-electron interaction energy overall the HHG rate is suppressed. We demonstrate that the C$_{70}$ molecule shows richer HHG spectra and a stronger high-harmonic intensity than the C$_{60}$.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
