Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userA Dynamical Model of Harmonic Generation in Centrosymmetric Semiconductors
267
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We study second and third harmonic generation in centrosymmetric semiconductors at visible and UV wavelengths in bulk and cavity environments. Second harmonic generation is due to a combination of symmetry breaking, the magnetic portion of the Lorentz force, and quadrupolar contributions that impart peculiar features to the angular dependence of the generated signals, in analogy to what occurs in metals. The material is assumed to have a non-zero, third order nonlinearity that gives rise to most of the third harmonic signal. Using the parameters of bulk Silicon we predict that cavity environments can significantly modify second harmonic generation (390nm) with dramatic improvements for third harmonic generation (266nm). This occurs despite the fact that the harmonics may be tuned to a wavelength range where the dielectric function of the material is negative: a phase locking mechanism binds the pump to the generated signals and inhibits their absorption. These results point the way to novel uses and flexibility of materials like Silicon as nonlinear media in the visible and UV ranges.
rate research
Read More
We theoretically investigate the piezo-optic effect of high-harmonic generation (HHG) in shear-strained semiconductors. By focusing on a typical semiconductor, GaAs, we show that there is optical activity, meaning different responses to right-handed and left-handed elliptically polarized electric fields. We also show that this optical activity is more pronounced for higher harmonics whose perturbative order exceeds the band-gap energy. These findings point to a useful pathway for strain engineering of nonlinear optics to control the reciprocity of HHG.
Second-order nonlinear effects, such as second-harmonic generation, can be strongly enhanced in nanofabricated photonic materials when both fundamental and harmonic frequencies are spatially and temporally confined. Practically designing low-volume and doubly resonant nanoresonators in conventional semiconductor compounds is challenging owing to their intrinsic refractive index dispersion. In this work we review a recently developed strategy to design doubly resonant nanocavities with low mode volume and large quality factor by localized defects in a photonic crystal structure. We build on this approach by applying an evolutionary optimisation algorithm in connection with Maxwell equations solvers, showing that the proposed design recipe can be applied to any material platform. We explicitly calculate the second-harmonic generation efficiency for doubly resonant photonic crystal cavity designs in typical III-V semiconductor materials, such as GaN and AlGaAs, targeting a fundamental harmonic at telecom wavelengths, and fully accounting for the tensor nature of the respective nonlinear susceptibilities. These results may stimulate the realisation of small footprint photonic nanostructures in leading semiconductor material platforms to achieve unprecedented nonlinear efficiencies.
As a promising avenue to obtain new extreme ultraviolet light source and detect electronic properties, high harmonic generation (HHG) has been actively developed both theoretically and experimentally. In solids lacking inversion symmetry, when electrons undergo a nonadiabatic transition, a directional charge shift occurs and is characterized by shift vector, which measures the real-space shift of the photoexcited electron and hole. We have revealed that shift vector plays prominent roles in the three-step model of real-space tunneling mechanism for electrons under strong laser fields. Since shift vector is determined by the topological properties of related wavefunctions, we expect HHG with its contribution can provid direct knowledge on the band topology in noncentrosymmetric topological insulators (TIs). In both Kane-Mele model and realistic material BiTeI, we have found that the shift vector reverses when band inversion happens during the topological phase transition between normal and topological insulators. Under strong laser fields, the reverse of shift vector leads to the sign change of HHG tropisms to the polarization direction of the laser field. This makes HHG a feasible all-optical strong-field method to directly identify the band inversion in non-centrosymmetric TIs.
For centrosymmetric materials such as monolayer graphene, no optical second harmonic generation (SHG) is generally expected because it is forbidden under the electric-dipole approximation. Yet we observed a strong, doping induced SHG from graphene, with its highest strength comparable to the electric-dipole allowed SHG in non-centrosymmetric 2D materials. This novel SHG has the nature of an electric-quadrupole response, arising from the effective breaking of inversion symmetry by optical dressing with an in-plane photon wave vector. More remarkably, the SHG is widely tuned by carrier doping or chemical potential, being sharply enhanced at Fermi edge resonances, but vanishing at the charge neutral point that manifests the electron-hole symmetry of massless Dirac Fermions. The striking behavior in graphene, which should also arise in graphene-like Dirac materials, expands the scope of nonlinear optics, and holds the promise of novel optoelectronic and photonic applications.
A new concept for second-harmonic generation (SHG) in an optical nanocircuit is proposed. We demonstrate both theoretically and experimentally that the symmetry of an optical mode alone is sufficient to allow SHG even in centro-symmetric structures made of centro-symmetric material. The concept is realized using a plasmonic two-wire transmission-line (TWTL), which simultaneously supports a symmetric and an anti-symmetric mode. We first confirm the generated second-harmonics belong only to the symmetric mode of the TWTL when fundamental excited modes are either purely symmetric or anti-symmetric. We further switch the emission into the anti-symmetric mode when a controlled mixture of the fundamental modes is excited simultaneously. Our results open up a new degree of freedom into the designs of nonlinear optical components, and should pave a new avenue towards multi-functional nanophotonic circuitry.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
