Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userExperimental evidence on the dissipationless transport of chiral edge state of the high-field Chern insulator in MnBi2Te4 nanodevices
61
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We demonstrate the dissipationless transport of the chiral edge state (CES) in the nanodevices of quantum anomalous Hall insulator candidate MnBi2Te4. The device presents a near-zero longitudinal resistance together with a quantized Hall plateau in excess of 0.97 h/e2 over a range of temperatures from very low up to the Neel temperature of 22 K. Each of four-probe nonlocal measurements gives near-zero resistance and two-probe measurements exhibit a plateau of +1 h/e2, while the results of three-probe nonlocal measurements depend on the magnetic field. This indicates non-dissipation as well as the chirality of the edge state. The CES shows three regimes of temperature dependence, i.e., well-preserved dissipationless transport below 6 K, variable range hopping while increasing the temperature and thermal activation at higher than 22 K. Even at the lowest temperature, a current of over 1.4 {mu}A breaks the dissipationless transport. These form a complete set of evidences of the Chern insulator state in the MnBi2Te4 systems.
rate research
Read More
The intrinsic antiferromagnetic topological insulator MnBi2Te4 provides a versatile platform for exploring exotic topological phenomena. In this work, we report nonlocal transport studies of exfoliated MnBi2Te4 flakes in the axion insulator state. We observe pronounced nonlocal transport signals in six septuple-layer thick MnBi2Te4 devices within the axion insulator regime at low magnetic fields. As a magnetic field drives the axion insulator into the Chern insulator, the nonlocal resistance almost vanishes due to the dissipationless nature of the chiral edge state. Our nonlocal transport measurements provide strong evidence that the charge transport in the axion insulator state is carried by the half-quantized helical edge state that is proposed to appear at the hinges of the top and bottom surfaces.
Being an antiferromagnetic topological insulator (AFM-TI), MnBi2Te4 offers an ideal platform to study the interplay between magnetism and topological order. We combine both transport and scanning microwave impedance microscopy (sMIM) to examine such interplay in atomically thin MnBi2Te4 with even-layer thickness. Transport measurement shows a quantized Hall resistivity under a magnetic field above 6 T signaling a Chern insulator phase, and a zero Hall plateau at low fields consistent with axion insulator phase. With sMIM, we directly visualize a magnetic-field-driven insulator-to-metal (IMT) transition of the bulk resulting from a quantum phase transition from a Chern insulator to axion insulator phase. Strikingly, sMIM reveals a persistent edge state across the transition. The observed edge state at low fields, in particular at zero field, calls for careful considerations for the topological nature of its bulk state. We discuss the possibility of having edge states in the context of axion insulator and beyond such a context. Our finding signifies the richness of topological phases in MnB2Te4 that has yet to be fully explored.
Topological insulators are new states of matter in which the topological phase originates from symmetry breaking. Recently, time-reversal invariant topological insulators were demonstrated for classical wave systems, such as acoustic systems, but limited by inter-pseudo-spin or inter-valley backscattering. This challenge can be effectively overcome via breaking the time-reversal symmetry. Here, we report the first experimental realization of acoustic topological insulators with nonzero Chern numbers, viz., acoustic Chern insulator (ACI), by introducing an angular-momentum-biased resonator array with broken Lorentz reciprocity. High Q-factor resonance is leveraged to reduce the required speed of rotation. Experimental results show that the ACI featured with a stable and uniform metafluid flow bias supports one-way nonreciprocal transport of sound at the boundaries, which is topologically immune to the defect-induced scatterings. Our work opens up opportunities for exploring unique observable topological phases and developing practical nonreciprocal devices in acoustics.
The interplay between band topology and magnetic order plays a key role in quantum states of matter. MnBi2Te4, a van der Waals magnet, has recently emerged as an exciting platform for exploring Chern insulator physics. Its layered antiferromagnetic order was predicted to enable even-odd layer-number dependent topological states, supported by promising edge transport measurements. Furthermore, it becomes a Chern insulator when all spins are aligned by an applied magnetic field. However, the evolution of the bulk electronic structure as the magnetic state is continuously tuned and its dependence on layer number remains unexplored. Here, employing multimodal probes, we establish one-to-one correspondence between bulk electronic structure, magnetic state, topological order, and layer thickness in atomically thin MnBi2Te4 devices. As the magnetic state is tuned through the canted magnetic phase, we observe a band crossing, i.e., the closing and reopening of the bulk bandgap, corresponding to the concurrent topological phase transition. Surprisingly, we find that the even- and odd-layer number devices exhibit a similar topological phase transition coupled to magnetic states, distinct from recent theoretical and experimental reports. Our findings shed new light on the interplay between band topology and magnetic order in this newly discovered topological magnet and validate the band crossing with concurrent measurements of topological invariant in a continuously tuned topological phase transition.
Two-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi2Te4 (MBT) has attracted great interest, and its 2D structure has been reported to host coexisting magnetism and topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) and reveal their spin-dependent transport properties by means of the first-principles calculations. The pn-junction diodes and sub-3-nm pin-junction field-effect transistors (FETs) show a strong rectifying effect and a spin filtering effect, with an ideality factor n close to 1 even at a reasonably high temperature. In addition, the pip- and nin-junction FETs give an interesting negative differential resistive (NDR) effect. The gate voltages can tune currents through these FETs in a large range. Furthermore, the MBT-ML has a strong response to light. Our results uncover the multifunctional nature of MBT-ML, pave the road for its applications in diverse next-generation semiconductor spin electric devices.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
