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Register a new userEmpirical Analysis of the Photoelectrochemical Impedance Response of Hematite Photoanodes for Water Photo-Oxidation
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Photoelectrochemical impedance spectroscopy (PEIS) is a useful tool for the characterization of photoelectrodes for solar water splitting. However, the analysis of PEIS spectra often involves a priori assumptions that might bias the results. This work puts forward an empirical method that analyzes the distribution of relaxation times (DRT), obtained directly from the measured PEIS spectra of a model hematite photoanode. By following how the DRT evolves as a function of control parameters such as the applied potential and composition of the electrolyte solution, we obtain unbiased insights into the underlying mechanisms that shape the photocurrent. In a subsequent step, we fit the data to a process-oriented equivalent circuit model (ECM) whose makeup is derived from the DRT analysis in the first step. This yields consistent quantitative trends of the dominant polarization processes observed. Our observations reveal a common step for the photo-oxidation reactions of water and H2O2 in alkaline solution
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Optimising the photoelectrochemical performance of hematite photoanodes for solar water splitting requires better understanding of the relationships between dopant distribution, structural defects and photoelectrochemical properties. Here, we use complementary characterisation techniques including electron microscopy, conductive atomic force microscopy (CAFM), Rutherford backscattering spectroscopy (RBS), atom probe tomography (APT) and intensity modulated photocurrent spectroscopy (IMPS) to study this correlation in Ti-doped (1 cat.%) hematite films deposited by pulsed laser deposition (PLD) on F:SnO2 (FTO) coated glass substrates. The deposition was carried out at 300 {deg}C, followed by annealing at 500 deg C for 2 h. Upon annealing, Ti was observed by APT to segregate to the hematite/FTO interface and into some hematite grains. Since no other pronounced changes in microstructure and chemical composition were observed by electron microscopy and RBS after annealing, the non-uniform Ti redistribution seems to be the reason for a reduced interfacial recombination in the annealed films, as observed by IMPS. This results in a lower onset potential, higher photocurrent and larger fill factor with respect to the as-deposited state. This work provides atomic-scale insights into the microscopic inhomogeneity in Ti-doped hematite thin films and the role of defect segregation in their electrical and photoelectrochemical properties.
In recent years, hematite potential as a photoanode material for solar hydrogen production has ignited a renewed interest in its physical and interfacial properties, which continues to be an active field of research. Research on hematite photoanodes provides new insights on the correlations between electronic structure, transport properties, excited state dynamics and charge transfer phenomena, and expands our knowledge on solar cell materials into correlated electron systems. This research news article presents a snapshot of selected theoretical and experimental developments linking the electronic structure to the photoelectrochemical performance, with particular focus on optoelectronic properties and charge carrier dynamics.
The photoelectrochemical behavior of a planar 1 cm2 thick Ti-doped hematite film deposited on F:SnO2 coated glass was studied with both front and back illumination. Despite low quantum efficiency, photocurrent was observed upon back illumination with low wavelengths, indicating that some photogenerated holes are able to traverse at least 700 nm across the hematite film and effectively oxidize water. This cannot be accounted for using the commonly accepted hole collection length of hematite based on fitting to the Gartner model. Furthermore, under back illumination, 450 nm excitation resulted in increased photocurrent as compared to 530 nm excitation despite most of the light being absorbed further away from the surface. These results demonstrate that the photocurrent is strongly dependent on the optical excitation wavelength, and related to both delocalized holes with long lifetime and localized excitations rather than only being dependent on the proximity of the absorption to the surface.
Perovskite yttrium tantalum oxynitride is theoretically proposed as a promising semiconductor for solar water splitting because of the predicted bandgap and energy positions of band edges. In experiment, however, we show here that depending on processing parameters, yttrium tantalum oxynitrides exist in multiphases, including the desired perovskite YTaON2, defect fluorite YTa(O,N,o)4, and N-doped YTaO4. These multiphases have bandgaps ranging between 2.13 and 2.31 eV, all responsive to visible light. The N-doped YTaO4, perovskite main phase, and fluorite main phase derived from crystalline fergusonite oxide precursors exhibit interesting photoelectrochemical performances for water oxidation, while the defect fluorite derived from low crystallized scheelite-type oxide precursors show negligible activity. Preliminarily measurements show that loading IrOx cocatalyst on N-doped YTaO4 significantly improves its photoelectrochemical performance encouraging further studies to optimize this new material for solar fuel production.
Photoelectrochemical solar water splitting is a promising approach to convert solar energy into sustainable hydrogen fuel using semiconductor electrodes. Due to their visible light absorption properties, oxynitrides have shown to be attractive photocatalysts for this application. In this study, the influence of the preparation method of CaNbO2N particles on their morphological and optical properties, and thereby their photoelectrochemical performance, is investigated. The best performing CaNbO2N photoanode is produced by ammonolysis of Nb enriched calcium niobium oxide. The enhanced photoactivity arises from an enlarged surface area and superior visible light absorption properties. The photoactivity of this photoanode was further enhanced by photodeposition of Co-Pi co-catalyst and by atomic layer deposition of an Al2O3 overlayer. A photocurrent density of 70 microA.cm-2 at 1.23 V vs RHE was achieved. The observed enhancement of the photoelectrochemical performance after Co-Pi/Al2O3 deposition is the combined effect of the improved kinetics of oxygen evolution due to the Co-Pi co-catalyst and the reduced surface recombination of the photogenerated carriers at the Al2O3 surface layer.
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