No Arabic abstract
In condensed matter systems it is necessary to distinguish between the momentum of the constituents of the system and the pseudomomentum of quasiparticles. The same distinction is also valid for angular momentum and pseudoangular momentum. Based on Noethers theorem, we demonstrate that the recently discussed orbital angular momenta of phonons and magnons are pseudoangular momenta. This conceptual difference is important for a proper understanding of the transfer of angular momentum in condensed matter systems, especially in spintronics applications.
We report ferromagnetic resonance in the normal configuration of an electrically insulating magnetic bilayer consisting of two yttrium iron garnet (YIG) films epitaxially grown on both sides of a 0.5-mm-thick nonmagnetic gadolinium gallium garnet (GGG) slab. An interference pattern is observed and it is explained as the strong coupling of the magnetization dynamics of the two YIG layers either in phase or out of phase by the standing transverse sound waves, which are excited through a magnetoelastic interaction. This coherent mediation of angular momentum by circularly polarized phonons through a nonmagnetic material over macroscopic distances can be useful for future information technologies.
We set up a general microscopic theory for the transfer of energy, momentum, and angular momentum mediated by photons among arbitrary objects in vacuum together with the environment at infinity. Using the nonequilibrium Greens function for the electromagnetic field and the self energies (polarizability) representing the properties of materials, we derive Meir-Wingreen type formulas for the energy emitted, force, and torque experienced by the objects in a unified formalism. The theory is applied to transport problems of graphene edges under nonequilibrium conditions. We find that the energy radiation of graphene obeys the $T^4$ law with an emissivity of 2.058$%$ that is consistent with both theoretical and experimental work. To generate momentum and angular momentum radiation, potential bias is needed. The observed effects go beyond the predictions of fluctuational electrodynamics.
Motivated by the importance of understanding competing mechanisms to current-induced spin-orbit torque in complex magnets, we develop a unified theory of current-induced spin-orbital coupled dynamics. The theory describes angular momentum transfer between different degrees of freedom in solids, e.g., the electron orbital and spin, the crystal lattice, and the magnetic order parameter. Based on the continuity equations for the spin and orbital angular momenta, we derive equations of motion that relate spin and orbital current fluxes and torques describing the transfer of angular momentum between different degrees of freedom. We then propose a classification scheme for the mechanisms of the current-induced torque in magnetic bilayers. Based on our first-principles implementation, we apply our formalism to two different magnetic bilayers, Fe/W(110) and Ni/W(110), which are chosen such that the orbital and spin Hall effects in W have opposite sign and the resulting spin- and orbital-mediated torques can compete with each other. We find that while the spin torque arising from the spin Hall effect of W is the dominant mechanism of the current-induced torque in Fe/W(110), the dominant mechanism in Ni/W(110) is the orbital torque originating in the orbital Hall effect of W. It leads to negative and positive effective spin Hall angles, respectively, which can be directly identified in experiments. This clearly demonstrates that our formalism is ideal for studying the angular momentum transfer dynamics in spin-orbit coupled systems as it goes beyond the spin current picture by naturally incorporating the spin and orbital degrees of freedom on an equal footing. Our calculations reveal that, in addition to the spin and orbital torque, other contributions such as the interfacial torque and self-induced anomalous torque within the ferromagnet are not negligible in both material systems.
Identifying quantum numbers to label elementary excitations is essential for the correct description of light-matter interaction in solids. In monolayer semiconducting transition metal dichalcogenides (TMDs) such as MoSe$_2$ or WSe$_2$, most optoelectronic phenomena are described well by labelling electron and hole states with the spin projection along the normal to the layer (S$_z$). In contrast, for WSe$_2$/MoSe$_2$ interfaces recent experiments show that taking S$_z$ as quantum number is not a good approximation, and spin mixing needs to be always considered. Here we argue that the correct quantum number for these systems is not S$_z$, but the $z$-component of the total angular momentum -- J$_z$ = L$_z$ + S$_z$ -- associated to the C$_3$ rotational lattice symmetry, which assumes half-integer values corresponding modulo 3 to distinct states. We validate this conclusion experimentally through the observation of strong intervalley scattering mediated by chiral optical phonons that -- despite carrying angular momentum 1 -- cause resonant intervalley transitions of excitons, with an angular momentum difference of 2.
Charged particles exhibit the Hall effect in the presence of magnetic fields. Analogously, ferromagnetic skyrmions with non-zero topological charges and finite fictitious magnetic fields exhibit the skyrmion Hall effect, which is detrimental for applications. The skyrmion Hall effect has been theoretically predicted to vanish for antiferromagnetic skyrmions because the fictitious magnetic field, proportional to net spin density, is zero. We experimentally confirm this prediction by observing current-driven transverse elongation of pinned ferrimagnetic bubbles. Remarkably, the skyrmion Hall effect, estimated with the angle between the current and bubble elongation directions, vanishes at the angular momentum compensation temperature where the net spin density vanishes. This study establishes a direct connection between the fictitious magnetic field and spin density, offering a pathway towards the realization of skyrmionic devices.