No Arabic abstract
The advances in the fields of scanning probe microscopy, scanning tunneling spectroscopy, point contact spectroscopy and point contact Andreev reflection spectroscopy to study the properties of conventional and quantum materials at cryogenic conditions have prompted the development of nanopositioners and nanoscanners with enhanced spatial resolution. Piezoelectric-actuator stacks as nanopositioners with working strokes $>100~mumathrm{m}$ and positioning resolution $sim$(1-10) nm are desirable for both basic research and industrial applications. However, information on the performance of most commercial piezoelectric-actuators in cryogenic environment and in the presence of magnetic fields in excess of 5,T is generally not available. In particular, the magnitude, rate and the associated hysteresis of the piezo-displacement at cryogenic temperatures are the most relevant parameters that determine whether a particular piezoelectric-actuator can be used as a nanopositioner. Here, the design and realization of an experimental set-up based on interferometric techniques to characterize a commercial piezoelectric-actuator over a temperature range of $2~mathrm{K}leq{T}leq260~mathrm{K}$ and magnetic fields up to 6,T is presented. The studied piezoelectric-actuator has a maximum displacement of $30~mumathrm{m}$ at room temperature for a maximum driving voltage of 75,V, which reduces to $1.2~mumathrm{m}$ with an absolute hysteresis of $left(9.1pm3.3right)~mathrm{nm}$ at $T=2,mathrm{K}$. The magnetic field is shown to have no substantial effect on the piezo properties of the studied piezoelectric-actuator stack.
We report the design and characterization of an optical shutter based on a piezoelectric cantilever. Compared to conventional electro-magnetic shutters, the device is intrinsically low power and acoustically quiet. The cantilever position is controlled by a high-voltage op-amp circuit for easy tuning of the range of travel, and mechanical slew rate, which enables a factor of 30 reduction in mechanical noise compared to a rapidly switched device. We achieve shuttering rise and fall times of 11 $mu$s, corresponding to mechanical slew rates of 1.3 $textrm{ ms}^{-1}$, with an timing jitter of less than 1 $mu$s. When used to create optical pulses, we achieve minimum pulse durations of 250 $mu$s. The reliability of the shutter was investigated by operating continuously for one week at 10 Hz switching rate. After this period, neither the shutter delay or actuation speed had changed by a notable amount. We also show that the high-voltage electronics can be easily configured as a versatile low-noise, high-bandwidth piezo driver, well-suited to applications in laser frequency control.
Tunneling magnetoresistance (TMR) in a vertical manganite junction was investigated by low-temperature scanning laser microscopy (LTSLM) allowing to determine the local relative magnetization M orientation of the two electrodes as a function of magnitude and orientation of the external magnetic field H. Sweeping the field amplitude at fixed orientation revealed magnetic domain nucleation and propagation in the junction electrodes. For the high-resistance state an almost single-domain antiparallel magnetization configuration was achieved, while in the low-resistance state the junction remained in a multidomain state. Calculated resistance $R_mathrm{calc}(H)$ based on the local M configuration obtained by LTSLM is in quantitative agreement with R(H) measured by magnetotransport.
Magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As have been investigated. Measurements at low temperature (50 mK) and high magnetic field (<= 27 T) have been employed in order to determine the hole concentration p = 3.5x10^20 cm ^-3 of a metallic (Ga0.947Mn0.053)As layer. The analysis of the temperature and magnetic field dependencies of the resistivity in the paramagnetic region was performed with the use of the above value of p, which gave the magnitude of p-d exchange energy |N0beta | ~ 1.5 eV.
The low-temperature and high-magnetic field (2K, 8T) powder x-ray diffraction (LTHM-XRD) measurements have been carried out at different temperatures (T) and magnetic fields (H) to investigate the structural phase diagram for phase separated La0.175Pr0.45Ca0.375MnO3 (LPCMO) manganite. The antiferromagnetic (AFM) P21/m insulating phase undergoes field induced transformation to ferromagnetic (FM) Pnma metallic ground state below its AFM ordering temperature (220K) in zero-field cooling (ZFC) from room temperature. At temperature greater than 25K, the field induced FM Pnma phase remained irreversible even after complete removal of field. However, for T ( 39-65K), the field induced transformation is partially reversible. This behaviour has been attributed to magnetic field induced devitrification of the glass-like arrested AFM P21/m phase to FM Pnma equilibrium phase. The devitrified FM Pnma phase starts transforming back to AFM P21/m phase around ~39K on heating the sample under zero field. Our results corroborate the evidence of strong magneto-structural coupling in this system. An H-T phase-diagram has been constructed based on LTHM-XTD data, which resembles with the one made from magnetic measurements. These results have been explained on the basis of kinetic arrest of first order phase transition and field induced devitrification of the arrested phase.
Different from conventional electroactive polymers, here we firstly present a new facile actuator made from aluminum alloy. The high-frequency electrically induced flapping motion was characterized under varied physical factors. This electroactuation results from alternative processes of charge induction and discharge, which is confirmed by the existence of periodical pulse current in the circuit. The metal actuator is of great stability and can maintain several days if not for any structural fatigue. Easy fabrication, high tunable frequency and durability make it potential for implementation of actuators for sensors, microelectromechanical systems and robotics.