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Register a new userAntiphase Oscillations in the Time-Resolved Spin Structure Factor of a Photoexcited Mott Insulator
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Motivated by the recent development of time-resolved resonant-inelastic x-ray scattering (TRRIXS) in photoexcited antiferromagnetic Mott insulators, we numerically investigate momentum-dependent transient spin dynamics in a half-filled Hubbard model on a square lattice. After turning off a pumping photon pulse, the intensity of a dynamical spin structure factor temporally oscillates with frequencies determined by the energy of two magnons in the antiferromagnetic Mott insulator. We find an antiphase behavior in the oscillations between two orthogonal momentum directions, parallel and perpendicular to the electric field of a pump pulse. The phase difference comes from the $B_{1g}$ channel of the two-magnon excitation. Observing the antiphase oscillations will be a big challenge for TRRIXS experiments when their time resolution will be improved by more than an order of magnitude.
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As an elementary particle the electron carries spin hbar/2 and charge e. When binding to the atomic nucleus it also acquires an angular momentum quantum number corresponding to the quantized atomic orbital it occupies (e.g., s, p or d). Even if electrons in solids form bands and delocalize from the nuclei, in Mott insulators they retain their three fundamental quantum numbers: spin, charge and orbital[1]. The hallmark of one-dimensional (1D) physics is a breaking up of the elementary electron into its separate degrees of freedom[2]. The separation of the electron into independent quasi-particles that carry either spin (spinons) or charge (holons) was first observed fifteen years ago[3]. Using Resonant Inelastic X-ray Scattering on the 1D Mott-insulator Sr2CuO3 we now observe also the orbital degree of freedom separating. We resolve an orbiton liberating itself from spinons and propagating through the lattice as a distinct quasi-particle with a substantial dispersion of ~0.2 eV.
Although the mechanism of superconductivity in the cuprates remains elusive, it is generally agreed that at the heart of the problem is the physics of doped Mott insulators. The cuprate parent compound has one unpaired electron per Cu site, and is predicted by band theory to be a half-filled metal. The strong onsite Coulomb repulsion, however, prohibits electron hopping between neighboring sites and leads to a Mott insulator ground state with antiferromagnetic (AF) ordering. Charge carriers doped into the CuO2 plane destroy the insulating phase and superconductivity emerges as the carrier density is sufficiently high. The natural starting point for tackling high Tc superconductivity is to elucidate the electronic structure of the parent Mott insulator and the behavior of a single doped charge. Here we use a scanning tunneling microscope to investigate the atomic scale electronic structure of the Ca2CuO2Cl2 parent Mott insulator of the cuprates. The full electronic spectrum across the Mott-Hubbard gap is uncovered for the first time, which reveals the particle-hole symmetric and spatially uniform Hubbard bands. A single electron donated by surface defect is found to create a broad in-gap electronic state that is strongly localized in space with spatial characteristics intimately related to the AF spin background. The unprecedented real space electronic structure of the parent cuprate sheds important new light on the origion of high Tc superconductivity from the doped Mott insulator perspective.
Motivated by the rich interplay among electronic correlation, spin-orbit coupling (SOC), crystal-field splitting, and geometric frustrations in the honeycomb-like lattice, we systematically investigated the electronic and magnetic properties of Li$_2$RhO$_3$. The material is semiconducting with a narrow band gap of $Deltasim$78 meV, and its temperature dependence of resistivity conforms to 3D variable range hopping mechanism. No long-range magnetic ordering was found down to 0.5 K, due to the geometric frustrations. Instead, single atomic spin-glass behavior below the spin-freezing temperature ($sim$6 K) was observed and its spin dynamics obeys the universal critical slowing down scaling law. First principle calculations suggested it to be a relativistic Mott insulator mediated by both electronic correlation and SOC. With moderate strength of electronic correlation and SOC, our results shed new light to the research of Heisenberg-Kitaev model in realistic materials.
How a Mott insulator develops into a weakly coupled metal upon doping is a central question to understanding various emergent correlated phenomena. To analyze this evolution and its connection to the high-$T_c$ cuprates, we study the single-particle spectrum for the doped Hubbard model using cluster perturbation theory on superclusters. Starting from extremely low doping, we identify a heavily renormalized quasiparticle dispersion that immediately develops across the Fermi level, and a weakening polaronic side band at higher binding energy. The quasiparticle spectral weight roughly grows at twice the rate of doping in the low doping regime, but this rate is halved at optimal doping. In the heavily doped regime, we find both strong electron-hole asymmetry and a persistent presence of Mott spectral features. Finally, we discuss the applicability of the single-band Hubbard model to describe the evolution of nodal spectra measured by angle-resolved photoemission spectroscopy (ARPES) on the single-layer cuprate La$_{2-x}$Sr$_x$CuO$_4$ ($0 le x le 0.15$). This work benchmarks the predictive power of the Hubbard model for electronic properties of high-$T_c$ cuprates.
The evolution from an anomalous metallic phase to a Mott insulator within the two-dimensional Hubbard model is investigated by means of the Cellular Dynamical Mean-Field Theory. We show that the density-driven Mott metal-insulator transition is approached in a non-uniform way in different regions of the momentum space. This gives rise to a breakup of the Fermi surface and to the formation of hot and cold regions, whose position depends on the hole or electron like nature of the carriers in the system.
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