No Arabic abstract
We have investigated the magnetic and charge transport properties of single crystals of Nowotney Chimney Ladder compound Cr$_{11}$Ge$_{19}$ and mapped out a comprehensive phase diagram reflecting the complicated interplay between the Dzyaloshinskii-Moriya (DM) interaction, the dipolar interaction, and the magnetic anisotropy. We have identified a set of interesting magnetic phases and attributed a finite topological Hall effect to the recently discovered bi-skyrmion phase. These data also suggest the existence of an anti-skyrmion state at finite fields for temperatures just below the magnetic ordering temperature, $T_c$, as indicated by a distinct change in sign of the topological Hall effect. Above $T_c$, we discovered a region of enhanced magnetic response corresponding to a disordered phase likely existing near the ferromagnetic critical point under small magnetic fields. Strong spin chirality fluctuations are demonstrated by the large value of the topological Hall resistivity persisting up to 1 T which is most likely due to the existence of the DM interaction. We argue that changes to the topological Hall effect correspond to different topological spin textures that are controlled by magnetic dipolar and DM interactions that vary in importance with temperature.
A topological insulator (TI) interfaced with a magnetic insulator (MI) may host an anomalous Hall effect (AHE), a quantum AHE, and a topological Hall effect (THE). Recent studies, however, suggest that coexisting magnetic phases in TI/MI heterostructures may result in an AHE-associated response that resembles a THE but in fact is not. This article reports a genuine THE in a TI/MI structure that has only one magnetic phase. The structure shows a THE in the temperature range of T=2-3 K and an AHE at T=80-300 K. Over T=3-80 K, the two effects coexist but show opposite temperature dependencies. Control measurements, calculations, and simulations together suggest that the observed THE originates from skyrmions, rather than the coexistence of two AHE responses. The skyrmions are formed due to an interfacial DMI interaction. The DMI strength estimated is substantially higher than that in heavy metal-based systems.
Breaking the time-reversal symmetry of a topological insulator (TI) by ferromagnetism can induce exotic magnetoelectric phenomena such as quantized anomalous Hall (QAH) effect. Experimental observation of QAH effect in a magnetically doped TI requires ferromagnetism not relying on the charge carriers. We have realized the ferromagnetism independent of both polarity and density of carriers in Cr-doped BixSb2-xTe3 thin films grown by molecular beam epitaxy. Meanwhile, the anomalous Hall effect is found significantly enhanced with decreasing carrier density, with the anomalous Hall angle reaching unusually large value 0.2 and the zero field Hall resistance reaching one quarter of the quantum resistance (h/e2), indicating the approaching of the QAH regime. The work paves the way to ultimately realize QAH effect and other unique magnetoelectric phenomena in TIs.
We implement the molecular beam epitaxy method to embed the black-phosphorus-like bismuth nanosheets into the bulk ferromagnet Cr$_2$Te$_3$. As a typical surfactant, bismuth lowers the surface tensions and mediates the layer-by-layer growth of Cr$_2$Te$_3$. Meanwhile, the bismuth atoms precipitate into black-phosphorus-like nanosheets with the lateral size of several tens of nanometers. In Cr$_2$Te$_3$ embedded with Bi-nanosheets, we observe simultaneously a large topological Hall effect together with the magnetic susceptibility plateau and magnetoresistivity anomaly. As a control experiment, none of these signals is observed in the pristine Cr$_2$Te$_3$ samples. Therefore, the Bi-nanosheets serve as seeds of topological Hall effect induced by non-coplanar magnetic textures planted into Cr$_2$Te$_3$. Our experiments demonstrate a new method to generates a large topological Hall effect by planting strong spin-orbit couplings into the traditional ferromagnet, which may have potential applications in spintronics.
Precise estimation of spin Hall angle as well as successful maximization of spin-orbit torque (SOT) form a basis of electronic control of magnetic properties with spintronic functionality. Until now, current-nonlinear Hall effect, or second harmonic Hall voltage has been utilized as one of the methods for estimating spin Hall angle, which is attributed to the magnetization oscillation by SOT. Here, we argue the second harmonic Hall voltage in magnetic/nonmagnetic topological insulator (TI) heterostructures, Cr$_x$(Bi$_{1-y}$Sb$_y$)$_{2-x}$Te$_3$/(Bi$_{1-y}$Sb$_y$)$_2$Te$_3$. From the angular, temperature and magnetic field dependence, it is unambiguously shown that the large second harmonic Hall voltage in TI heterostructures is governed not by SOT but mainly by asymmetric magnon scattering mechanism without magnetization oscillation. Thus, this method does not allow an accurate estimation of spin Hall angle when magnons largely contribute to electron scattering. Instead, the SOT contribution in a TI heterostructure is exemplified by current pulse induced non-volatile magnetization switching, which is realized with a current density of $sim 2.5 times 10^{10} mathrm{A/m}^2$, showing its potential as spintronic materials.
We have investigated anomalous Hall effect and magnetoresistance in a noncentrosymmetric itinerant magnet Cr$_{11}$Ge$_{19}$. While the temperature- and magnetic-field-dependent anomalous Hall conductivity is just proportional to the magnetization above 30 K, it is more enhanced in the lower temperature region. The magnitude of negative magnetoresistance begins to increase toward low temperature around 30 K. The anisotropic magnetoresistance emerges at similar temperature. Because there is no anomaly in the temperature dependence of magnetization around 30 K, the origin of these observations in transport properties is ascribed to some electronic structure with the energy scale of 30 K. We speculate this is caused by the spin splitting due to breaking of spatial inversion symmetry.