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Register a new userGate-Modulated Quantum Interference Oscillations in Sb-Doped Bi2Se3 Topological Insulator Nanoribbon
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Topological insulator nanoribbons (TI NRs) provide a useful platform to explore the phase-coherent quantum electronic transport of topological surface states, which is crucial for the development of topological quantum devices. When applied with an axial magnetic field, the TI NR exhibits magnetoconductance (MC) oscillations with a flux period of h/e, i.e., Aharonov-Bohm (AB) oscillations, and h/2e, i.e., Altshuler-Aronov-Spivak (AAS) oscillations. Herein, we present an extensive study of the AB and AAS oscillations in Sb doped Bi$_2$Se$_3$ TI NR as a function of the gate voltage, revealing phase-alternating topological AB oscillations. Moreover, the ensemble-averaged fast Fourier transform analysis on the Vg dependent MC curves indicates the suppression of the quantum interference oscillation amplitudes near the Dirac point, which is attributed to the suppression of the phase coherence length within the low carrier density region. The weak antilocalization analysis on the perpendicular MC curves confirms the idea of the suppressed coherence length near the Dirac point in the TI NR.
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Topological insulator (TI) nanoribbons (NRs) provide a unique platform for investigating quantum interference oscillations combined with topological surface states. One-dimensional subbands formed along the perimeter of a TI NR can be modulated by an axial magnetic field, exhibiting Aharonov-Bohm (AB) and Altshuler-Aronov-Spivak (AAS) oscillations of magnetoconductance (MC). Using Sb-doped Bi2Se3 TI NRs, we found that the relative amplitudes of the two quantum oscillations can be tuned by varying the channel length, exhibiting crossover from quasi-ballistic to diffusive transport regimes. The AB and AAS oscillations were discernible even for a 70 micrometer long channel, while only the AB oscillations were observed for a short channel. Analyses based on ensemble-averaged fast Fourier transform of MC curves revealed exponential temperature dependences of the AB and AAS oscillations, from which the circumferential phase-coherence length and thermal length were obtained. Our observations indicate that the channel length in a TI NR can be a useful control knob for tailored quantum interference oscillations, especially for developing topological hybrid quantum devices.
We report the fabrication and characterization of superconducting quantum interference devices (SQUIDs) made of Sb-doped Bi2Se3 topological insulator (TI) nanoribbon (NR) contacted with PbIn superconducting electrodes. When an external magnetic field was applied along the NR axis, the TI NR exhibited periodic magneto-conductance oscillations, the so-called Aharonov-Bohm oscillations, owing to one-dimensional subbands. Below the superconducting transition temperature of PbIn electrodes, we observed supercurrent flow through TI NR-based SQUID. The critical current periodically modulates with a magnetic field perpendicular to the SQUID loop, revealing that the periodicity corresponds to the superconducting flux quantum. Our experimental observations can be useful to explore Majorana bound states (MBS) in TI NR, promising for developing topological quantum information devices.
Electrical field control of the carrier density of topological insulators (TI) has greatly expanded the possible practical use of these materials. However, the combination of low temperature local probe studies and a gate tunable TI device remains challenging. We have overcome this limitation by scanning tunneling microscopy and spectroscopy measurements on in-situ molecular beam epitaxy growth of Bi2Se3 films on SrTiO3 substrates with pre-patterned electrodes. Using this gating method, we are able to shift the Fermi level of the top surface states by 250 meV on a 3 nm thick Bi2Se3 device. We report field effect studies of the surface state dispersion, band gap, and electronic structure at the Fermi level.
We have studied the magnetotransport properties of the metallic, p-type Sb2Te2Se which is a topological insulator. Magnetoresistance shows Shubnikov de Haas oscillations in fields above B=15 T. The maxima/minima positions of oscillations measured at different tilt angles with respect to the B direction align with the normal component of field Bcosine, implying the existence of a 2D Fermi surface in Sb2Te2Se. The value of the Berry phase determined from a Landau level fan diagram is very close to 0.5, further suggesting that the oscillations result from topological surface states. From Lifshitz-Kosevich analyses, the position of the Fermi level is found to be EF =250 meV, above the Dirac point. This value of EF is almost 3 times as large as that in our previous study on the Bi2Se2:1Te0:9 topological insulator; however, it still touches the tip of the bulk valence band. This explains the metallic behavior and hole-like bulk charge carriers in the Sb2Te2Se compound.
Understanding the spin-texture behavior of boundary modes in ultrathin topological insulator films is critically essential for the design and fabrication of functional nano-devices. Here by using spin-resolved photoemission spectroscopy with p-polarized light in topological insulator Bi2Se3 thin films, we report tunneling-dependent evolution of spin configuration in topological insulator thin films across the metal-to-insulator transition. We observe strongly binding energy- and wavevector-dependent spin polarization for the topological surface electrons in the ultra-thin gapped-Dirac-cone limit. The polarization decreases significantly with enhanced tunneling realized systematically in thin insulating films, whereas magnitude of the polarization saturates to the bulk limit faster at larger wavevectors in thicker metallic films. We present a theoretical model which captures this delicate relationship between quantum tunneling and Fermi surface spin polarization. Our high-resolution spin-based spectroscopic results suggest that the polarization current can be tuned to zero in thin insulating films forming the basis for a future spin-switch nano-device.
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