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Register a new userFerromagnetic-electrodes-induced Hall effect in topological Dirac semimetals
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We propose an unconventional type of Hall effect in a topological Dirac semimetal with ferromagnetic electrodes. The topological Dirac semimetal itself has time-reversal symmetry, whereas attached ferromagnetic electrodes break it, causing the large Hall response. This induced Hall effect is a characteristic of the helical surface/edge states that arise in topological materials, such as topological Dirac semimetals or quantum spin Hall insulators. We compute the Hall conductance/resistance and the Hall angle by using a lattice model with four-terminal geometry. For topological Dirac semimetals with four electrodes, the induced Hall effect occurs whether the current electrodes or the voltage electrodes are ferromagnetic. When the spins in electrodes are almost fully polarized, the Hall angle becomes as large as that of quantum Hall states or ideal magnetic Weyl semimetals. We show the robustness of the induced Hall effect against impurities and also discuss the spin injection and spin decay problems. This Hall response can be used to detect whether the magnetizations of the two ferromagnetic electrodes are parallel or antiparallel.
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In addition to the well known chiral anomaly, Dirac semimetals have been argued to exhibit mirror anomaly, close analogue to the parity anomaly of ($2+1$)-dimensional massive Dirac fermions. The observable response of such anomaly is manifested in a singular step-like anomalous Hall response across the mirror-symmetric plane in the presence of a magnetic field. Although this result seems to be valid in type-II Dirac semimetals (strictly speaking, in the linearized theory), we find that type-I Dirac semimetals do not possess such an anomaly in anomalous Hall response even at the level of the linearized theory. In particular, we show that the anomalous Hall response continuously approaches zero as one approaches the mirror symmetric angle in a type-I Dirac semimetal as opposed to the singular Hall response in a type-II Dirac semimetal. Moreover, we show that, under certain condition, the anomalous Hall response may vanish in a linearized type-I Dirac semimetal, even in the presence of time reversal symmetry breaking.
The quantum Hall effect is usually observed in 2D systems. We show that the Fermi arcs can give rise to a distinctive 3D quantum Hall effect in topological semimetals. Because of the topological constraint, the Fermi arc at a single surface has an open Fermi surface, which cannot host the quantum Hall effect. Via a wormhole tunneling assisted by the Weyl nodes, the Fermi arcs at opposite surfaces can form a complete Fermi loop and support the quantum Hall effect. The edge states of the Fermi arcs show a unique 3D distribution, giving an example of (d-2)-dimensional boundary states. This is distinctly different from the surface-state quantum Hall effect from a single surface of topological insulator. As the Fermi energy sweeps through the Weyl nodes, the sheet Hall conductivity evolves from the 1/B dependence to quantized plateaus at the Weyl nodes. This behavior can be realized by tuning gate voltages in a slab of topological semimetal, such as the TaAs family, Cd$_3$As$_2$, or Na$_3$Bi. This work will be instructive not only for searching transport signatures of the Fermi arcs but also for exploring novel electron gases in other topological phases of matter.
After the experimental realization, the Berry curvature dipole (BCD) induced nonlinear Hall effect (NLHE) has attracted tremendous interest to the condensed matter community. Here, we investigate another family of Hall effect, namely, chiral anomaly induced nonlinear Hall effect (CNHE) in multi-Weyl semimetal (mWSM). In contrast to the BCD induced NLHE, CNHE appears because of the combination of both chiral anomaly and anomalous velocity due to non-trivial Berry curvature. Using the semiclassical Boltzmann theory within the relaxation time approximation, we show that, in contrast to the chiral anomaly induced linear Hall effect, the magnitude of CNHE decreases with the topological charge n. Interestingly, we find that unlike the case of n=1, the CNHE has different behaviors in different planes. Our prediction on the behavior of CNHE in mWSM can directly be checked in experiments.
We propose a mechanism to generate a static magnetization via {em axial magnetoelectric effect} (AMEE). Magnetization ${bf M} sim {bf E}_5(omega)times {bf E}_5^{*}(omega)$ appears as a result of the transfer of the angular momentum of the axial electric field ${bf E}_5(t)$ into the magnetic moment in Dirac and Weyl semimetals. We point out similarities and differences between the proposed AMEE and a conventional inverse Faraday effect (IFE). As an example, we estimated the AMEE generated by circularly polarized acoustic waves and find it to be on the scale of microgauss for gigahertz frequency sound. In contrast to a conventional IFE, magnetization rises linearly at small frequencies and fixed sound intensity as well as demonstrates a nonmonotonic peak behavior for the AMEE. The effect provides a way to investigate unusual axial electromagnetic fields via conventional magnetometry techniques.
Employing the quantum Liouville equation with phenomenological dissipation, we investigate the transport properties of massless and massive Dirac fermion systems that mimics graphene and topological insulators, respectively. The massless Dirac fermion system does not show an intrinsic Hall effect, but it shows a Hall current under the presence of circularly-polarized laser fields as a nature of a optically-driven nonequilibrium state. Based on the microscopic analysis, we find that the light-induced Hall effect mainly originates from the imbalance of photocarrier distribution in momentum space although the emergent Floquet-Berry curvature also has a non-zero contribution. We further compute the Hall transport property of the massive Dirac fermion system with an intrinsic Hall effect in order to investigate the interplay of the intrinsic topological contribution and the extrinsic light-induced population contribution. As a result, we find that the contribution from the photocarrier population imbalance becomes significant in the strong field regime and it overcomes the intrinsic contribution. This finding clearly demonstrates that intrinsic transport properties of materials can be overwritten by external driving and may open a way to ultrafast optical-control of transport properties of materials.
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