Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userOn-chip coherent frequency-domain THz spectroscopy for electrical transport
260
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We developed a coherent frequency-domain THz spectroscopic technique on a coplanar waveguide in the ultrabroad frequency range from 200 MHz to 1.6 THz based on continuous wave (CW) laser spectroscopy. Optical beating created by mixing two frequency-tunable CW lasers is focused on photoconductive switches to generate and detect high-frequency current in a THz circuit. In contrast to time-domain spectroscopy, our frequency-domain spectroscopy enables unprecedented frequency resolution of 10 MHz without using complex building blocks of femtosecond laser optics. Furthermore, due to the coherent nature of the photomixing technique, we are able to identify the origin of multiple reflections in the time domain using the Hilbert analysis and inverse Fourier transform. These results demonstrate that the advantages of on-chip coherent frequency-domain spectroscopy, such as its broadband, frequency resolution, usability, and time-domain accessibility, provide a unique capability for measuring ultrafast electron transport in integrated THz circuits.
rate research
Read More
Frequency combs have revolutionized time and frequency metrology and in recent years, new frequency comb lasers that are highly compact or even on-chip have been demonstrated in the mid-infrared and THz regions of the electromagnetic spectrum. The emerging technologies include electrically pumped quantum and interband cascade semiconductor devices, as well as high-quality factor microresonators. In this guest editorial, the authors summarize recent advances in the field, the potential for rapid broadband spectroscopy, as well as the challenges and prospects for use in molecular gas sensing.
We present a theory of the current-voltage characteristics of a magnetic domain wall between two highly spin-polarized materials, which takes into account the effect of the electrical bias on the spin-flip probability of an electron crossing the wall. We show that increasing the voltage reduces the spin-flip rate, and is therefore equivalent to reducing the width of the domain wall. As an application, we show that this effect widens the temperature window in which the operation of a unipolar spin diode is nearly ideal.
We study the damping of perpendicular standing spin-waves (PSSWs) in ultrathin Fe films at frequencies up to 2.4 THz. The PSSWs are excited by optically generated ultrashort spin current pulses, and probed optically in the time domain. Analyzing the wavenumber and thickness dependence of the damping, we separate different contributions and demonstrate that at sufficiently large wave vectors $k$ the damping is dominated by spin transport effects scaling with k^4 and limiting the frequency range of observable PSSWs. Although such contribution is known to originate in the spin diffusion, we argue that at moderate and large k the super-diffusive character of the spin transport again reduces the related damping term.
The status of the ac quantum Hall effect is reviewed with emphasis on the theoretical development in recent years. In particular, the numerical approaches for the calculation of the frequency dependent Hall and longitudinal conductivities of non-interacting electrons are considered in detail. Results for the frequency scaling at the critical point and for the frequency dependent deviation of the Hall conductivity from the quantised plateau value are presented.
In this letter, we describe operation of a radio-frequency superconducting single electron transistor (RF-SSET) with an on-chip superconducting LC matching network consisting of a spiral inductor L and its capacitance to ground. The superconducting network has a lower parasitic capacitance and gives a better matching for the RF-SSET than does a commercial chip inductor. Moreover, the superconducting network has negligibly low dissipation, leading to sensitive response to changes in the RF-SSET impedance. The charge sensitivity 2.4*10^-6 e/(Hz)^1/2 in the sub-gap region and energy sensitivity of 1.9 hbar indicate that the RF-SSET is operating in the vicinity of the shot noise limit.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
