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Register a new userHard Magnetic Topological Semimetals in XPt3: Harmony of Berry Curvature
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Topological magnetic semimetals, like Co3Sn2S2 and Co2MnGa, are known to display exotic transport properties, such as large intrinsic anomalous (AHE) due to uncompensated Berry curvature. The highly symmetric XPt3 compounds display anti-crossing gapped nodal lines, which are a driving mechanism in the intrinsic Berry curvature Hall effects. Uniquely, these compounds contain two sets of gapped nodal lines that harmoniously dominate the Berry curvature in this complex multiband system. We calculate a maximum AHE of 1965 S/cm in the CrPt3 by a state-of-the-art first principle electronic structure. We have grown high-quality thin films by magnetron sputtering and measured a robust AHE of 1750 S/cm for different sputtering growth conditions. Additionally, the cubic films display a hard magnetic axis along [111] direction. The facile and scalable fabrication of these materials is prime candidates for integration into topological devices.
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Magnetic topological phases of quantum matter are an emerging frontier in physics and material science. Along these lines, several kagome magnets have appeared as the most promising platforms. However, the magnetic nature of these materials in the presence of topological state remains an unsolved issue. Here, we explore magnetic correlations in the kagome magnet Co_3Sn_2S_2. Using muon spin-rotation, we present evidence for competing magnetic orders in the kagome lattice of this compound. Our results show that while the sample exhibits an out-of-plane ferromagnetic ground state, an in-plane antiferromagnetic state appears at temperatures above 90 K, eventually attaining a volume fraction of 80% around 170 K, before reaching a non-magnetic state. Strikingly, the reduction of the anomalous Hall conductivity above 90 K linearly follows the disappearance of the volume fraction of the ferromagnetic state. We further show that the competition of these magnetic phases is tunable through applying either an external magnetic field or hydrostatic pressure. Our results taken together suggest the thermal and quantum tuning of Berry curvature field via external tuning of magnetic order. Our study shows that Co_3Sn_2S_2 is a rare example where the magnetic competition drives the thermodynamic evolution of the Berry curvature field, thus tuning its topological state.
Topological Weyl semimetals (WSMs) have been predicted to be excellent candidates for detecting Berry curvature dipole (BCD) and the related non-linear effects in electronics and optics due to the large Berry curvature concentrated around the Weyl nodes. And yet, linearized models of isolated tilted Weyl cones only realize a diagonal non-zero BCD tensor which sum to zero in the model of WSM with multiple Weyl nodes in the presence of mirror symmetry. On the other hand, recent textit{ab initio} work has found that realistic WSMs like TaAs-type or MoTe$_2$-type compounds, which have mirror symmetry, indeed show an off-diagonal BCD tensor with an enhanced magnitude for its non-zero components. So far, there is a lack of theoretical work addressing this contradiction for 3D WSMs. In this paper, we systematically study the BCD in 3D WSMs using lattice Weyl Hamiltonians, which go beyond the linearized models. We find that the non-zero BCD and its related important features for these WSMs do not rely on the contribution from the Weyl nodes. Instead, they are dependent on the part of the Fermi surface that lies textit{between} the Weyl nodes, in the region of the reciprocal space where neighboring Weyl cones overlap. For large enough chemical potential such Fermi surfaces are present in the lattice Weyl Hamiltonians as well as in the realistic WSMs. We also show that, a lattice Weyl Hamitonian with a non-zero chiral chemical potential for the Weyl cones can also support dips or peaks in the off-diagonal components of the BCD tensor near the Weyl nodes themselves, consistent with recent textit{ab initio} work.
Various Co2 based Heusler compounds are predicted to be Weyl materials. These systems with broken symmetry possess a large Berry curvature, and introduce exotic transport properties. The present study on epitaxially grown Co2TiSn films is an initial approach to understand and explore this possibility. The anomalous Hall effect in the well-ordered Co2TiSn films has been investigated both experimentally and theoretically. The measured Hall conductivity is in good agreement to the calculated Berry curvature. Small deviations between them are due to the influence of skew scattering on the Hall effect. From theoretical point of view, the main contribution to the anomalous Hall effect originates from slightly gapped nodal lines, due to a symmetry reduction induced by the magnetization. It has been found that only part of the nodal lines contributed near to the anomalous Hall conductivity at a fixed Fermi energy which can be explained from a magnetic symmetry analysis. Furthermore, from hard x-ray photoelectron spectroscopy measurements, we establish the electronic structure in the film that is comparable to the theoretical density of states calculations. The present results provide deeper insight into the spintronics from the prospect of topology.
Recent advances in tuning electronic, magnetic, and topological properties of two-dimensional (2D) magnets have opened a new frontier in the study of quantum physics and promised exciting possibilities for future quantum technologies. In this study, we find that the dual-gate technology can well tune the electronic and topological properties of antiferromagnetic (AFM) even septuple-layer (SL) MnBi$_2$Te$_4$ thin films. Under an out-of-plane electric field that breaks $mathcal{PT}$ symmetry, the Berry curvature of the thin film could be engineered efficiently, resulting in a huge change of anomalous Hall (AH) signal. Beyond the critical electric field, the double-SL MnBi$_2$Te$_4$ thin film becomes a Chern insulator with a high Chern number of 3. We further demonstrate that such 2D material can be used as an AFM switch via electric-field control of the AH signal. These discoveries inspire the design of low-power memory prototype for future AFM spintronic applications.
In two-dimensional layered quantum materials, the stacking order of the layers determines both the crystalline symmetry and electronic properties such as the Berry curvature, topology and electron correlation. Electrical stimuli can influence quasiparticle interactions and the free-energy landscape, making it possible to dynamically modify the stacking order and reveal hidden structures that host different quantum properties. Here we demonstrate electrically driven stacking transitions that can be applied to design nonvolatile memory based on Berry curvature in few-layer WTe$_2$. The interplay of out-of-plane electric fields and electrostatic doping controls in-plane interlayer sliding and creates multiple polar and centrosymmetric stacking orders. In situ nonlinear Hall transport reveals such stacking rearrangements result in a layer-parity-selective Berry curvature memory in momentum space, where the sign reversal of the Berry curvature and its dipole only occurs in odd-layer crystals. Our findings open an avenue towards exploring coupling between topology, electron correlations, and ferroelectricity in hidden stacking orders and demonstrate a new low-energy-cost, electrically controlled topological memory in the atomically thin limit.
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