Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userAntimony thin films demonstrate programmable optical non-linearity
108
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
The use of metals of nanometer dimensions to enhance and manipulate light-matter interactions for a range of emerging plasmonics-enabled nanophotonic and optoelectronic applications is an interesting, yet not highly explored area of research outside of plasmonics1,2. Even more importantly, the concept of an active metal, i.e. a metal that can undergo an optical non-volatile transition has not been explored. Nanostructure-based applications would have unprecedented impact on both the existing and future of optics with the development of active and nonlinear optical tunabilities in single elemental metals3-5. Compared to alloys, pure metals have the material simplicity and uniformity; however single elemental metals have not been viewed as tunable optical materials, although they have been explored as viable electrically switchable materials. In this paper we demonstrate for the first time that antimony (Sb), a pure metal, is optically distinguishable between two programmable states as nanoscale thin films. We then show that these states are stable at room temperature, and the states correspond to the crystalline and amorphous phases of the metal. Crucially from an application standpoint, we demonstrate both its optoelectronic modulation capabilities as well as speed of switching using single sub-picosecond (ps) pulses. The simplicity of depositing a single metal portends its potential for use in applications ranging from high speed active metamaterials to photonic neuromorphic computing, and opens up the possibility for its use in any optoelectronic application where metallic conductors with an actively tunable state is important.
rate research
Read More
We investigate the ultrafast electron dynamics triggered by terahertz and optical pulses in thin platinum and gold films by probing their transient optical reflectivity. The response of the platinum film to an intense terahertz pulse is similar to the optically-induced dynamics of both films and can be described by a two-temperature model. Surprisingly, gold can exhibit a much smaller terahertz pulse-induced reflectivity change and with opposite sign. For platinum, we estimate a 20% larger electron-phonon coupling for the terahertz-driven dynamics compared to the optically-induced one, which we ascribe to an additional nonthermal electron-phonon coupling contribution. We explain the remarkable response of gold to terahertz radiation with the field emission of electrons due the Fowler-Nordheim tunneling process, in samples with thickness below the structural percolation threshold where near-field enhancement is possible. Our results provide a fundamental insight into the ultrafast processes relevant to modern electro- and magneto-optical applications.
BaSnO_{3}, a high mobility perovskite oxide, is an attractive material for oxide-based electronic devices. However, in addition to low-field mobility, high-field transport properties such as the saturation velocity of carriers play a major role in determining device performance. We report on the experimental measurement of electron saturation velocity in La-doped BaSnO_{3} thin films for a range of doping densities. Predicted saturation velocities based on a simple LO-phonon emission model using an effective LO phonon energy of 120 meV show good agreement with measurements of velocity saturation in La-doped BaSnO_{3} films.. Density-dependent saturation velocity in the range of 1.6x10^{7} cm/s reducing to 2x10^{6} cm/s is predicted for {delta}-doped BaSnO3 channels with carrier densities ranging from 10^{13} cm^{-2} to 2x10^{14} cm^{-2} respectively. These results are expected to aid the informed design of BaSnO3 as the active material for high-charge density electronic transistors.
Na3Bi has attracted significant interest in both bulk form as a three-dimensional topological Dirac semimetal and in ultra-thin form as a wide-bandgap two-dimensional topological insulator. Its extreme air sensitivity has limited experimental efforts on thin- and ultra-thin films grown via molecular beam epitaxy to ultra-high vacuum environments. Here we demonstrate air-stable Na3Bi thin films passivated with magnesium difluoride (MgF2) or silicon (Si) capping layers. Electrical measurements show that deposition of MgF2 or Si has minimal impact on the transport properties of Na3Bi whilst in ultra-high vacuum. Importantly, the MgF2-passivated Na3Bi films are air-stable and remain metallic for over 100 hours after exposure to air, as compared to near instantaneous degradation when they are unpassivated. Air stability enables transfer of films to a conventional high-magnetic field cryostat, enabling quantum transport measurements which verify that the Dirac semimetal character of Na3Bi films is retained after air exposure.
Aluminum scandium nitride alloy (Al1-xScxN) is regarded as a promising material for high-performance acoustic devices used in wireless communication systems. Phonon scattering and heat conduction processes govern the energy dissipation in acoustic resonators, ultimately determining their performance quality. This work reports, for the first time, on phonon scattering processes and thermal conductivity in Al1-xScxN alloys with the Sc content (x) up to 0.26. The thermal conductivity measured presents a descending trend with increasing x. Temperature-dependent measurements show an increase in thermal conductivity as the temperature increases at temperatures below 200K, followed by a plateau at higher temperatures (T> 200K). Application of a virtual crystal phonon conduction model allows us to elucidate the effects of boundary and alloy scattering on the observed thermal conductivity behaviors. We further demonstrate that the alloy scattering is caused mainly by strain-field difference, and less by the atomic mass difference between ScN and AlN, which is in contrast to the well-studied Al1-xGaxN and SixGe1-x alloy systems where atomic mass difference dominates the alloy scattering. This work studies and provides the quantitative knowledge for phonon scattering and the thermal conductivity in Al1-xScxN, paving the way for future investigation of materials and design of acoustic devices.
Understanding microscopic heat conduction in thin films is important for nano/micro heat transfer and thermal management for advanced electronics. As the thickness of thin films is comparable to or shorter than a phonon wavelength, phonon dispersion relations and transport properties are significantly modulated, which should be taken into account for heat conduction in thin films. Although phonon confinement and depletion effects have been considered, it should be emphasized that surface-localized phonons (surface phonons) arise whose influence on heat conduction may not be negligible due to the high surface-to-volume ratio. However, the role of surface phonons in heat conduction has received little attention thus far. In the present work, we performed anharmonic lattice dynamics calculations to investigate the thickness and temperature dependence of in-plane thermal conductivity of silicon thin films with sub-10-nm thickness in terms of surface phonons. Through systematic analysis of the influences of surface phonons, we found that anharmonic coupling between surface and internal phonons localized in thin films significantly suppresses overall in-plane heat conduction in thin films. We also discovered that specific low-frequency surface phonons significantly contribute to surface--internal phonon scattering and heat conduction suppression. Our findings are beneficial for the thermal management of electronics and phononic devices and may lead to surface phonon engineering for thermal conductivity control.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
