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Register a new userDeep-ultraviolet Layered Oxide B2S2O9 with Strong and Robust Second Harmonic Generation
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Lei Kang
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Two-dimensional (2D) layered semiconductors with both ultrawide bandgap and strong second harmonic generation (SHG) are essential for expanding the nonlinear optical (NLO) applications to deep-ultraviolet (DUV) region in nanoscale. Unfortunately, these materials are rare in nature and have not been discovered until now. In this Letter, we predict the B2S2O9 (BSO), an existing layered oxide, can exhibit both DUV bandgap and strong SHG effects, comparable to the best known DUV NLO bulks. The strong SHG intensities in BSO, originated from the ordered arrangement of polar SO4 and BO4 tetrahedra forming planar structure, are linearly tunable by the layer thickness. Surprisingly, the spontaneous rotations of rigid tetrahedra under strains can induce the (nearly) zero Poissons ratios in BSO, which simultaneously result in the robust SHG effects against large strains, fundamentally differing from other known 2D NLO semiconductors. The discovery of BSO may provide an unprecedented opportunity to explore DUV NLO physics and applications in 2D limit.
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The two-dimensional ferroelectrics GeS, GeSe, SnS and SnSe are expected to have large spontaneous in-plane electric polarization and enhanced shift-current response. Using density functional methods, we show that these materials also exhibit the largest effective second harmonic generation reported so far. It can reach magnitudes up to $10$ nm/V which is about an order of magnitude larger than that of prototypical GaAs. To rationalize this result we model the optical response with a simple one-dimensional two-band model along the spontaneous polarization direction. Within this model the second-harmonic generation tensor is proportional to the shift-current response tensor. The large shift current and second harmonic responses of GeS, GeSe, SnS and SnSe make them promising non-linear materials for optoelectronic applications.
Stacked atomically thin transition metal dichalcogenides (TMDs) exhibit fundamentally new physical properties compared to those of the individual layers. The twist angle between the layers plays a crucial role in tuning these properties. Having a tool that provides highresolution, large area mapping of the twist angle, would be of great importance in the characterization of such 2D structures. Here we use polarization-resolved second harmonic generation (P-SHG) imaging microscopy to rapidly map the twist angle in large areas of overlapping WS2 stacked layers. The robustness of our methodology lies in the combination of both intensity and polarization measurements of SHG in the overlapping region. This allows the accurate measurement and consequent pixel-by-pixel mapping of the twist angle in this area. For the specific case of 30o twist angle, P-SHG enables imaging of individual layers.
The second-order nonlinear optical susceptibility $Pi^{(2)}$ for second harmonic generation is calculated for gapped graphene. The linear and second-order nonlinear plasmon excitations are investigated in context of second harmonic generation (SHG). We report a red shift and an order of magnitude enhancement of the SHG resonance with growing gap, or alternatively, reduced electro-chemical potential.
Quantum geometry of the electron wave function plays a significant role in the linear and non-linear responses of crystalline materials. Here, we study quantum geometry induced second harmonic generation. We identify non-linear responses stemming from the quantum geometric tensor and the quantum geometric connection in systems with finite Fermi surfaces and disorder. In addition to the injection, shift, and anomalous currents we find two new contributions, which we term double resonant and higher-order pole contributions. Our findings can be tested in state-of-the-art devices in WTe2 (time-reversal symmetric system) and in CuMnAs (parity-time reversal symmetric systems).
Second harmonic generation (SHG) spectroscopy ubiquitously enables the investigation of surface chemistry, interfacial chemistry as well as symmetry properties in solids. Polarization-resolved SHG spectroscopy in the visible to infrared regime is regularly used to investigate electronic and magnetic orders through their angular anisotropies within the crystal structure. However, the increasing complexity of novel materials and emerging phenomena hamper the interpretation of experiments solely based on the investigation of hybridized valence states. Here, polarization-resolved SHG in the extreme ultraviolet (XUV-SHG) is demonstrated for the first time, enabling element-resolved angular anisotropy investigations. In non-centrosymmetric LiNbO$_3$, elemental contributions by lithium and niobium are clearly distinguished by energy dependent XUV-SHG measurements. This element-resolved and symmetry-sensitive experiment suggests that the displacement of Li ions in LiNbO$_3$, which is known to lead to ferroelectricity, is accompanied by distortions to the Nb ion environment that breaks the inversion symmetry of the NbO$_{6}$ octahedron as well. Our simulations show that the measured second harmonic spectrum is consistent with Li ion displacements from the centrosymmetric position by $sim$0.5 Angstrom while the Nb-O bonds are elongated/contracted by displacements of the O atoms by $sim$0.1 Angstrom. In addition, the polarization-resolved measurement of XUV-SHG shows excellent agreement with numerical predictions based on dipole-induced SHG commonly used in the optical wavelengths. This constitutes the first verification of the dipole-based SHG model in the XUV regime. The findings of this work pave the way for future angle and time-resolved XUV-SHG studies with elemental specificity in condensed matter systems.
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