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Quantum geometry induced second harmonic generation

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 Added by Amit Agarwal
 Publication date 2021
  fields Physics
and research's language is English




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Quantum geometry of the electron wave function plays a significant role in the linear and non-linear responses of crystalline materials. Here, we study quantum geometry induced second harmonic generation. We identify non-linear responses stemming from the quantum geometric tensor and the quantum geometric connection in systems with finite Fermi surfaces and disorder. In addition to the injection, shift, and anomalous currents we find two new contributions, which we term double resonant and higher-order pole contributions. Our findings can be tested in state-of-the-art devices in WTe2 (time-reversal symmetric system) and in CuMnAs (parity-time reversal symmetric systems).



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488 - L.E. Golub , S.A. Tarasenko 2014
The valley degeneracy of electron states in graphene stimulates intensive research of valley-related optical and transport phenomena. While many proposals on how to manipulate valley states have been put forward, experimental access to the valley polarization in graphene is still a challenge. Here, we develop a theory of the second optical harmonic generation in graphene and show that this effect can be used to measure the degree and sign of the valley polarization. We show that, at the normal incidence of radiation, the second harmonic generation stems from imbalance of carrier populations in the valleys. The effect has a specific polarization dependence reflecting the trigonal symmetry of electron valley and is resonantly enhanced if the energy of incident photons is close to the Fermi energy.
A hallmark of wave-matter duality is the emergence of quantum-interference phenomena when an electronic transition follows different trajectories. Such interference results in asymmetric absorption lines such as Fano resonances, and gives rise to secondary effects like electromagnetically induced transparency (EIT) when multiple optical transitions are pumped. Few solid-state systems show quantum interference and EIT, with quantum-well intersubband transitions in the IR offering the most promising avenue to date to devices exploiting optical gain without inversion. Quantum interference is usually hampered by inhomogeneous broadening of electronic transitions, making it challenging to achieve in solids at visible wavelengths and elevated temperatures. However, disorder effects can be mitigated by raising the oscillator strength of atom-like electronic transitions - excitons - which arise in monolayers of transition-metal dichalcogenides (TMDCs). Quantum interference, probed by second-harmonic generation (SHG), emerges in monolayer WSe2, without a cavity, splitting the SHG spectrum. The splitting exhibits spectral anticrossing behaviour, and is related to the number of Rabi flops the strongly driven system undergoes. The SHG power-law exponent deviates strongly from the canonical value of 2, showing a Fano-like wavelength dependence which is retained at room temperature. The work opens opportunities in solid-state quantum-nonlinear optics for optical mixing, gain without inversion and quantum-information processing.
139 - Yu Zhang , Di Huang , Yuwei Shan 2018
For centrosymmetric materials such as monolayer graphene, no optical second harmonic generation (SHG) is generally expected because it is forbidden under the electric-dipole approximation. Yet we observed a strong, doping induced SHG from graphene, with its highest strength comparable to the electric-dipole allowed SHG in non-centrosymmetric 2D materials. This novel SHG has the nature of an electric-quadrupole response, arising from the effective breaking of inversion symmetry by optical dressing with an in-plane photon wave vector. More remarkably, the SHG is widely tuned by carrier doping or chemical potential, being sharply enhanced at Fermi edge resonances, but vanishing at the charge neutral point that manifests the electron-hole symmetry of massless Dirac Fermions. The striking behavior in graphene, which should also arise in graphene-like Dirac materials, expands the scope of nonlinear optics, and holds the promise of novel optoelectronic and photonic applications.
The second-order nonlinear optical susceptibility $Pi^{(2)}$ for second harmonic generation is calculated for gapped graphene. The linear and second-order nonlinear plasmon excitations are investigated in context of second harmonic generation (SHG). We report a red shift and an order of magnitude enhancement of the SHG resonance with growing gap, or alternatively, reduced electro-chemical potential.
Second harmonic generation (SHG) is a fundamental nonlinear optical phenomenon widely used both for experimental probes of materials and for application to optical devices. Even-order nonlinear optical responses including SHG generally require breaking of inversion symmetry, and thus have been utilized to study noncentrosymmetric materials. Here, we study theoretically the SHG in inversion-symmetric Dirac and Weyl semimetals under a DC current which breaks the inversion symmetry by creating a nonequilibrium steady state. Based on analytic and numerical calculations, we find that Dirac and Weyl semimetals exhibit strong SHG upon application of finite current. Our experimental estimation for a Dirac semimetal Cd$_3$As$_2$ and a magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$ suggests that the induced susceptibility $chi^{(2)}$ for practical applied current densities can reach $10^5~mathrm{pm}cdotmathrm{V}^{-1}$ with mid-IR or far-IR light. This value is 10$^2$-10$^4$ times larger than those of typical nonlinear optical materials. We also discuss experimental approaches to observe the current-induced SHG and comment on current-induced SHG in other topological semimetals in connection with recent experiments.
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