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Register a new userTransparent mirror effect in twist-angle-disordered bilayer graphene
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When light is incident on a medium with spatially disordered index of refraction, interference effects lead to near-perfect reflection when the number of dielectric interfaces is large, so that the medium becomes a transparent mirror. We investigate the analog of this effect for electrons in twisted bilayer graphene (TBG), for which local fluctuations of the twist angle give rise to a spatially random Fermi velocity. In a description that includes only spatial variation of Fermi velocity, we derive the incident-angle-dependent localization length for the case of quasi-one-dimensional disorder by mapping this problem onto one dimensional Anderson localization. The localization length diverges at normal incidence as a consequence of Klein tunneling, leading to a power-law decay of the transmission when averaged over incidence angle. In a minimal model of TBG, the modulation of twist angle also shifts the location of the Dirac cones in momentum space in a way that can be described by a random gauge field, and thus Klein tunneling is inexact. However, when the Dirac electrons incident momentum is large compared to these shifts, the primary effect of twist disorder is only to shift the incident angle associated with perfect transmission away from zero. These results suggest a mechanism for disorder-induced collimation, valley filtration, and energy filtration of Dirac electron beams, so that TBG offers a promising new platform for Dirac fermion optics.
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Experiments on bilayer graphene unveiled a fascinating realization of stacking disorder where triangular domains with well-defined Bernal stacking are delimited by a hexagonal network of strain solitons. Here we show by means of numerical simulations that this is a consequence of a structural transformation of the moir{e} pattern inherent of twisted bilayer graphene taking place at twist angles $theta$ below a crossover angle $theta^{star}=1.2^{circ}$. The transformation is governed by the interplay between the interlayer van der Waals interaction and the in-plane strain field, and is revealed by a change in the functional form of the twist energy density. This transformation unveils an electronic regime characteristic of vanishing twist angles in which the charge density converges, though not uniformly, to that of ideal bilayer graphene with Bernal stacking. On the other hand, the stacking domain boundaries form a distinct charge density pattern that provides the STM signature of the hexagonal solitonic network.
Strong electron correlation and spin-orbit coupling (SOC) provide two non-trivial threads to condensed matter physics. When these two strands of physics come together, a plethora of quantum phenomena with novel topological order have been predicted to emerge in the correlated SOC regime. In this work, we examine the combined influence of electron correlation and SOC on a 2-dimensional (2D) electronic system at the atomic interface between magic-angle twisted bilayer graphene (tBLG) and a tungsten diselenide (WSe) crystal. In such a structure, strong electron correlation within the moire flatband stabilizes correlated insulating states at both quarter and half-filling, whereas SOC transforms these Mott-like insulators into ferromagnets, evidenced by robust anomalous Hall effect with hysteretic switching behavior. The coupling between spin and valley degrees of freedom is unambiguously demonstrated as the magnetic order is shown to be tunable with an in-plane magnetic field, or a perpendicular electric field. In addition, we examine the influence of SOC on the isospin order and stability of superconductivity. Our findings establish an efficient experimental knob to engineer topological properties of moire bands in twisted bilayer graphene and related systems.
We propose use of disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the disorders effects are confined to only one of the graphene layers. This effect is based on the bias voltages ability to select which of the graphene layers carries current, and is not tied to the presence of a gap in the density of states. In particular, we demonstrate this effect in models of gapless ABA-stacked trilayer graphene, gapped ABC-stacked trilayer graphene, and gapped bilayer graphene.
Van der Waals layered materials with well-defined twist angles between the crystal lattices of individual layers have attracted increasing attention due to the emergence of unexpected material properties. As many properties critically depend on the exact twist angle and its spatial homogeneity, there is a need for a fast and non-invasive characterization technique of the local twist angle, to be applied preferably right after stacking. We demonstrate that confocal Raman spectroscopy can be utilized to spatially map the twist angle in stacked bilayer graphene with an angle resolution of 0.01{deg} for angles between 6.5{deg} and 8{deg} when using a green excitation laser. The twist angles can directly be extracted from the moire superlattice-activated Raman scattering process of the transverse acoustic (TA) phonon mode. Furthermore, we show that the width of the TA Raman peak contains valuable information on spatial twist-angle variations on length scales below the laser spot size of ~ 500 nm.
The emergence of flat electronic bands and of the recently discovered strongly correlated and superconducting phases in twisted bilayer graphene crucially depends on the interlayer twist angle upon approaching the magic angle $theta_M approx 1.1deg$. Although advanced fabrication methods allow alignment of graphene layers with global twist angle control of about 0.1$deg$, little information is currently available on the distribution of the local twist angles in actual magic angle twisted bilayer graphene (MATBG) transport devices. Here we map the local $theta$ variations in hBN encapsulated devices with relative precision better than 0.002$deg$ and spatial resolution of a few moir$e$ periods. Utilizing a scanning nanoSQUID-on-tip, we attain tomographic imaging of the Landau levels in the quantum Hall state in MATBG, which provides a highly sensitive probe of the charge disorder and of the local band structure determined by the local $theta$. We find that even state-of-the-art devices, exhibiting high-quality global MATBG features including superconductivity, display significant variations in the local $theta$ with a span close to 0.1$deg$. Devices may even have substantial areas where no local MATBG behavior is detected, yet still display global MATBG characteristics in transport, highlighting the importance of percolation physics. The derived $theta$ maps reveal substantial gradients and a network of jumps. We show that the twist angle gradients generate large unscreened electric fields that drastically change the quantum Hall state by forming edge states in the bulk of the sample, and may also significantly affect the phase diagram of correlated and superconducting states. The findings call for exploration of band structure engineering utilizing twist-angle gradients and gate-tunable built-in planar electric fields for novel correlated phenomena and applications.
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