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The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a function of applied bias. Above a punch-through voltage ($V_t$) corresponding to the onset of a space-charge-limited hole current, the longitudinal $langle 110 rangle$ PZR $pi$-coefficient is $pi approx 65 times 10^{-11}$~Pa$^{-1}$, similar to the value obtained in charge-neutral, p-type silicon. Below $V_t$, the mechanical stress dependence of the Shockley-Read-Hall (SRH) recombination parameters, specifically the divacancy trap energy $E_T$ which is estimated to vary by $approx 30$~$mu$V/MPa, yields $pi approx -25 times 10^{-11}$~Pa$^{-1}$. The combination of space-charge-limited transport and defect engineering which significantly reduces SRH recombination lifetimes makes this work directly relevant to discussions of giant or anomalous PZR at small strains in nano-silicon whose characteristic dimension is larger than a few nanometers. In this limit the reduced electrostatic dimensionality lowers $V_t$ and amplifies space-charge-limited currents and efficient SRH recombination occurs via surface defects. The results reinforce the growing evidence that in steady state, electro-mechanically active defects can result in anomalous, but not giant, PZR.
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We present a systematic study of the magnetic properties of semiconducting ZnFe$_2$O$_4$ thin films fabricated by pulsed laser deposition at low and high oxygen partial pressure and annealed in oxygen and argon atmosphere, respectively. The magnetic response is enhanced by annealing the films at 250$^{circ}$C and diminished at annealing temperatures above 300$^{circ}$C. The initial increase is attributed to the formation of oxygen vacancies after argon treatment, evident by the increase in the low energy absorption at $sim$ 0.9 eV involving Fe$^{2+}$ cations. The weakened magnetic response is related to a decline in disorder with a cation redistribution toward a normal spinel configuration. The structural renormalization is consistent with the decrease and increase in oscillator strength of respective electronic transitions involving tetrahedrally (at $sim$ 3.5 eV) and octahedrally (at $sim$ 5.7 eV) coordinated Fe$^{3+}$ cations.
Irradiation damage is a key physics issue for semiconductor devices under extreme environments. For decades, the ionization-irradiation-induced damage in transistors with silica-silicon structures under constant dose rate is modeled by a uniform generation of $E$ centers in the bulk silica region and their irreversible conversion to $P_b$ centers at the silica-silicon interface. But, the traditional model fails to explain experimentally observed dependence of the defect concentrations on dose, especially at low dose rate. Here, we propose that, the generation of $E$ is decelerated due to the dispersive diffusion of induced holes in the disordered silica and the conversion of $P_b$ is reversible due to recombination-enhanced defect reactions under irradiation. It is shown that the derived analytic model based on these new understandings can consistently explain the fundamental but puzzling dependence of the defect concentrations on dose and dose rate in a wide range.
Acting as artificial synapses, two-terminal memristive devices are considered fundamental building blocks for the realization of artificial neural networks. Organized into large arrays with a top-down approach, memristive devices in conventional crossbar architecture demonstrated the implementation of brain-inspired computing for supervised and unsupervised learning. Alternative way using unconventional systems consisting of many interacting nano-parts have been proposed for the realization of biologically plausible architectures where the emergent behavior arises from a complexity similar to that of biological neural circuits. However, these systems were unable to demonstrate bio-realistic implementation of synaptic functionalities with spatio-temporal processing of input signals similarly to our brain. Here we report on emergent synaptic behavior of biologically inspired nanoarchitecture based on self-assembled and highly interconnected nanowire (NW) networks realized with a bottom up approach. The operation principle of this system is based on the mutual electrochemical interaction among memristive NWs and NW junctions composing the network and regulating its connectivity depending on the input stimuli. The functional connectivity of the system was shown to be responsible for heterosynaptic plasticity that was experimentally demonstrated and modelled in a multiterminal configuration, where the formation of a synaptic pathway between two neuron terminals is responsible for a variation in synaptic strength also at non-stimulated terminals. These results highlight the ability of nanowire memristive architectures for building brain-inspired intelligent systems based on complex networks able to physically compute the information arising from multi-terminal inputs.
Controlling nanostructure from molecular, crystal lattice to the electrode level remains as arts in practice, where nucleation and growth of the crystals still require more fundamental understanding and precise control to shape the microstructure of metal deposits and their properties. This is vital to achieve dendrite-free Li metal anodes with high electrochemical reversibility for practical high-energy rechargeable Li batteries. Here, cryogenic-transmission electron microscopy was used to capture the dynamic growth and atomic structure of Li metal deposits at the early nucleation stage, in which a phase transition from amorphous, disordered states to a crystalline, ordered one was revealed as a function of current density and deposition time. The real-time atomic interaction over wide spatial and temporal scales was depicted by the reactive-molecular dynamics simulations. The results show that the condensation accompanied with the amorphous-to-crystalline phase transition requires sufficient exergy, mobility and time to carry out, contrary to what the classical nucleation theory predicts. These variabilities give rise to different kinetic pathways and temporal evolutions, resulting in various degrees of order and disorder nanostructure in nano-sized domains that dominate in the morphological evolution and reversibility of Li metal electrode. Compared to crystalline Li, amorphous/glassy Li outperforms in cycle life in high-energy rechargeable batteries and is the desired structure to achieve high kinetic stability for long cycle life.
Understanding the mechanisms which relate properties of liquid and solid phases is crucial for fabricating new advanced solid materials, such as glasses, quasicrystals and high-entropy alloys. Here we address this issue for quasicrystal-forming Al-Cu-Fe alloys which can serve as a model for studying microscopic mechanisms of quasicrystal formation. We study experimentally two structural-sensitive properties of the liquid -- viscosity and undercoolability -- and compare results with textit{ab initio} investigations of short-range order (SRO). We observe that SRO in Al-Cu-Fe melts is polytetrahedral and mainly presented by distorted Kasper polyhedra. However, topologically perfect icosahedra are almost absent an even stoichiometry of icosahedral quasicrystal phase that suggests the topological structure of local polyhedra does not survive upon melting. It is shown that the main features of interatomic interaction in Al-Cu-Fe system, extracted from radial distribution function and bong-angle distribution function, are the same for both liquid and solid states. In particular, the system demonstrates pronounced repulsion between Fe and Cu as well as strong chemical interaction between Fe and Al, which are almost concentration-independent. We argue that SRO and structural-sensitive properties of a melt may serve as useful indicators of solid phase formation. In particular, in the concentration region corresponding to the composition of the icosahedral phase, a change in the chemical short-range order is observed, which leads to minima on the viscosity and udercoolability isotherms and has a noticeable effect on the initial stage of solidification.
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