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Register a new userExtraordinarily Large Permittivity Modulation in Zinc Oxide for Dynamic Nanophotonics
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The dielectric permittivity of a material encapsulates the essential physics of light-matter interaction into the materials local response to optical excitation. Dynamic, photo-induced modulation of the permittivity can enable an unprecedented level of control over the phase, amplitude, and polarization of light. Therefore, the detailed dynamic characterization of technology-relevant materials with substantially tunable optical properties and fast response times is a crucial step in the realization of tunable optical devices. This work reports on the extraordinarily large permittivity changes in zinc oxide thin films (up to -3.6 relative change in the real part of the dielectric permittivity at 1600 nm wavelength) induced by optically generated free carriers. We demonstrate broadband reflectance modulation up to 70 percent in metal-backed oxide mirrors at the telecommunication wavelengths, with picosecond-scale relaxation times. The epsilon near zero points of the films can be dynamically shifted from 8.5 microns to 1.6 microns by controlling the pump fluence. Finally, we show that the modulation can be selectively enhanced at specific wavelengths employing metal-backed ZnO disks while maintaining picosecond-scale switching times. This work provides insights into the free-carrier assisted permittivity modulation in zinc oxide and could enable the realization of novel dynamic devices for beam-steering, polarizers, and spatial light modulators.
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All-dielectric nanoantennas have recently opened exciting opportunities for functional nanophotonics, owing to their strong optical resonances along with low material loss in the near-infrared range. Pushing these concepts to the visible range is hindered by a larger absorption coefficient of Si and other high-index semiconductors, thus encouraging the search for alternative dielectrics for nanophotonics. In this paper, we employ bandgap engineering to synthesize hydrogenated amorphous Si nanoparticles (a-Si:H NPs) offering ideal features for functional nanophotonics. We observe significant material loss suppression in a-Si:H NPs in the visible range caused by hydrogenation-induced bandgap renormalization, producing resonant modes in single a-Si:H NPs with Q factors up to ~100, in the visible and near-IR range for the first time. In order to demonstrate light-matter interaction enhancement, we realize highly tunable all-dielectric nanoantennas coupling them to photochromic spiropyran (SP) molecules. We show ~70% reversible all-optical tuning of light scattering at the high-Q resonant mode, along with minor tunability when out of resonance. This remarkable all-optical tuning effect is achieved under a low incident light intensity ~3.8 W/cm2 for UV light and ~1.1*10^2 W/cm2 for green light.
Recent advancements in computational inverse design have begun to reshape the landscape of structures and techniques available to nanophotonics. Here, we outline a cross section of key developments at the intersection of these two fields: moving from a recap of foundational results to motivation of emerging applications in nonlinear, topological, near-field and on-chip optics.
Rare-earth doped nanocrystals are emerging light sources used for many applications in nanotechnology enabled by human ability to control their various optical properties with chemistry and material science. However, one important optical problem -- polarisation of photoluminescence -- remains largely out of control by chemistry methods. Control over photoluminescence polarisation can be gained via coupling of emitters to resonant nanostructures such as optical antennas and metasurfaces. However, the resulting polarization is typically sensitive to position disorder of emitters, which is difficult to mitigate. Recently, new classes of disorder-immune optical systems have been explored within the framework of topological photonics. Here we explore disorder-robust topological arrays of Mie-resonant nanoparticles for polarisation control of photoluminescence of nanocrystals. We demonstrate polarized emission from rare-earth-doped nanocrystals governed by photonic topological edge states supported by zigzag arrays of dielectric resonators. We verify the topological origin of polarised photoluminescence by comparing emission from nanoparticles coupled to topologically trivial and nontrivial arrays of nanoresonators.
The field of 2D materials-based nanophotonics has been growing at a rapid pace, triggered by the ability to design nanophotonic systems with in situ control, unprecedented degrees of freedom, and to build material heterostructures from bottom up with atomic precision. A wide palette of polaritonic classes have been identified, comprising ultra confined optical fields, even approaching characteristic length scales of a single atom. These advances have been a real boost for the emerging field of quantum nanophotonics, where the quantum mechanical nature of the electrons and-or polaritons and their interactions become relevant. Examples include, quantum nonlocal effects, ultrastrong light matter interactions, Cherenkov radiation, access to forbidden transitions, hydrodynamic effects, single plasmon nonlinearities, polaritonic quantization, topological effects etc. In addition to these intrinsic quantum nanophotonic phenomena, the 2D material system can also be used as a sensitive probe for the quantum properties of the material that carries the nanophotonics modes, or quantum materials in its vicinity. Here, polaritons act as a probe for otherwise invisible excitations, e.g. in superconductors, or as a new tool to monitor the existence of Berry curvature in topological materials and superlattice effects in twisted 2D materials.
The wide bandgap semiconductor ZnO is interesting for spintronic applications because of its small spin-orbit coupling implying a large spin coherence length. Utilizing vertical spin valve devices with ferromagnetic electrodes (TiN/Co/ZnO/Ni/Au), we study the spin-polarized transport across ZnO in all-electrical experiments. The measured magnetoresistance agrees well with the prediction of a two spin channel model with spin-dependent interface resistance. Fitting the data yields spin diffusion lengths of 10.8nm (2K), 10.7nm (10K), and 6.2nm (200K) in ZnO, corresponding to spin lifetimes of 2.6ns (2K), 2.0ns (10K), and 31ps (200K).
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