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Spin wave excitations in exchange biased IrMn/CoFe bilayers

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 Added by Sarah Jenkins
 Publication date 2020
  fields Physics
and research's language is English




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Using an atomistic spin model, we have simulated spin wave injection and propagation into antiferromagnetic IrMn from an exchange coupled CoFe layer. The spectral characteristics of the exited spin waves have a complex beating behavior arising from the non-collinear nature of the antiferromagnetic order. We find that the frequency response of the system depends strongly on the strength and frequency of oscillating field excitations. We also find that the strength of excited spin waves strongly decays away from the interfacial layer with a frequency dependent attenuation. Our findings suggest that spin waves generated by coupled ferromagnets are too weak to reverse IrMn in their entirety even with resonant excitation of a coupled ferromagnet. However, efficient spin wave injection into the antiferromagnet is possible due to the non-collinear nature of the IrMn spin ordering.



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We report magnetization and magetoresistance measurements in hybrid ferromagnetic metal/semiconductor heterostructures comprised of MnAs/(Ga,Mn)As bilayers. Our measurements show that the (metallic) MnAs and (semiconducting) (Ga,Mn)As layers are exchange coupled, re- sulting in an exchange biasing of the magnetically softer (Ga,Mn)As layer that weakens with layer thickness. Magnetoresistance measurements in the current-perpendicular-to-the-plane geometry show a spin valve effect in these self-exchange biased bilayers. Similar measurements in MnAs/p- GaAs/(Ga,Mn)As trilayers show that the exchange coupling diminishes with spatial separation between the layers.
Antiferromagnetic spintronic devices have the potential to outperform conventional ferromagnetic devices due to their ultrafast dynamics and high data density. A challenge in designing these devices is the control and detection of the orientation of the anti-ferromagnet. One of the most promising ways to achieve this is through the exchange bias effect. This is of particular importance in large scale multigranular devices. Due to the large system sizes, previously, only micromagnetic simulations have been possible, these have an assumed distribution of antiferromagnetic anisotropy directions. Here, we use an atomistic model where the distribution of antiferromagnetic anisotropy directions occurs naturally and the exchange bias occurs due to the intrinsic disorder in the antiferromagnet. We perform large scale simulations, generating realistic values of exchange bias. We find a strong temperature dependance of the exchange bias, which approaches zero at the blocking temperature while the coercivity has a peak at the blocking temeprature due to the superparamagnetic flipping of the antiferromagnet during the hysteresis loop. We find a large discrepancy between the exchange bias predicted from a geometric model of the antiferromagnetic interface indicating the importance of grain edge effects in multigranular exchange biased systems. The grain size dependence shows the expected peak due to a competition between the superparamagnetic nature of small grains and reduction in the statistical imbalance in the number of interfacial spins for larger grain sizes. Our simulations confirm the existence of single antiferromagnetic domains within each grain. The model gives insights into the physical origin of exchange bias and provides a route to developing optimised nanoscale antiferromagnetic spintronic devices.
107 - A. Sud , Y. Koike , S. Iihama 2020
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