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Register a new userMagnetoelastic and Magnetostrictive Properties of Co$_2$XAl Heusler Compounds
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We present a comprehensive first principles electronic structure study of the magnetoelastic and magnetostrictive properties in the Co-based Co$_2$XAl (X = V, Ti, Cr, Mn, Fe) full Heusler compounds. In addition to the commonly used total energy approach, we employ torque method to calculate the magnetoelastic tensor elements. We show that the torque based methods are in general computationally more efficient, and allow to unveil the atomic- and orbital-contributions to the magnetoelastic constants in an exact manner, as opposed to the conventional approaches based on second order perturbation with respect to the spin-orbit coupling. The magnetostriction constants are in good agreement with available experimental data. The results reveal that the main contribution to the magnetostriction constants, $lambda_{100}$ and $lambda_{111}$, arises primarily from the strained-induced modulation of the $langle d_{x^2-y^2}|hat{L}_z|d_{xy}rangle$ and $langle d_{z^2}|hat{L}_x|d_{yz}rangle$ spin orbit coupling matrix elements, respectively, of the Co atoms.
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We report the structural, transport, electronic, and magnetic properties of Co$_2$FeGa Heusler alloy nanoparticles. The Rietveld refinements of x-ray diffraction (XRD) data with the space group Fm$bar {3}$m clearly demonstrates that the nanoparticles are of single phase. The particle size (D) decreases with increasing the SiO$_2$ concentration. The Bragg peak positions and the inter-planer spacing extracted from high-resolution transmission electron microscopy image and selected area electron diffraction are in well agreement with data obtained from XRD. The coercivity initially increases from 127~Oe to 208~Oe between D = 8.5~nm and 12.5~nm, following the D$^{-3/2}$ dependence and then decreases with further increasing D up to 21.5~nm with a D$^{-1}$ dependence, indicating the transition from single domain to multidomain regime. The effective magnetic anisotropic constant behaves similarly as coercivity, which confirms this transition. A complex scattering mechanisms have been fitted to explain the electronic transport properties of these nanoparticles. In addition we have studied core-level and valence band spectra using photoemission spectroscopy, which confirm the hybridization between $d$ states of Co/Fe. Further nanoparticle samples synthesized by co-precipitation method show higher saturation magnetization. The presence of Raman active modes can be associated with the high chemical ordering, which motivates for detailed temperature dependent structural investigation using synchrotron radiation and neutron sources.
We report the deposition of thin Co$_2$FeSi films by RF magnetron sputtering. Epitaxial (100)-oriented and L2$_1$ ordered growth is observed for films grown on MgO(100) substrates. (110)-oriented films on Al$_2$O$_3$(110) show several epitaxial domains in the film plane. Investigation of the magnetic properties reveals a saturation magnetization of 5.0 $mu_B/f.u.$ at low temperatures. The temperature dependence of the resistivity $rho_{xx}(T)$ exhibits a crossover from a T^3.5 law at T<50K to a T^1.65 behaviour at elevated temperatures. $rho_{xx}(H)$ shows a small anisotropic magnetoresistive effect. A weak dependence of the normal Hall effect on the external magnetic field indicates the compensation of electron and hole like contributions at the Fermi surface.
The local atomic environments and magnetic properties were investigated for a series of Co(1+x)Fe(2-x)Si (0<x<1) Heusler compounds. While the total magnetic moment in these compounds increases with the number of valance electrons, the highest Curie temperature (Tc) in this series was found for Co1.5Fe1.5Si, with a Tc of 1069 K (24 K higher than the well known Co2FeSi). 57Fe Mossbauer spectroscopy was used to characterize the local atomic order and to estimate the Co and Fe magnetic moments. Consideration of the local magnetic moments and the exchange integrals is necessary to understand the trend in Tc.
The Ohmic spin diode (OSD) is a recent concept in spintronics, which is based on half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to realize the OSD for room temperature applications as these materials possess very high Curie temperatures as well as half-metallic and spin-gapless semiconducting behavior within the same family. Using state-of-the-art first-principles calculations combined with the non-equilibrium Greens function method we design four different OSDs based on half-metallic and spin-gapless semiconducting quaternary Heusler compounds. All four OSDs exhibit linear current-voltage ($I-V$) characteristics with zero threshold voltage $V_T$. We show that these OSDs possess a small leakage current, which stems from the overlap of the conduction and valence band edges of opposite spin channels around the Fermi level in the SGS electrodes. The obtained on/off current ratios vary between $30$ and $10^5$. Our results can pave the way for the experimental fabrication of the OSDs within the family of ordered quaternary Heusler compounds.
Brillouin light scattering spectroscopy from so-called standing spin waves in thin magnetic films is often used to determine the magnetic exchange constant. The data analysis of the experimentally determined spin-wave modes requires an unambiguous assignment to the correct spin wave mode orders. Often additional investigations are needed to guarantee correct assignment. This is particularly important in the case of Heusler compounds where values of the exchange constant vary substantially between different compounds. As a showcase, we report on the determination of the exchange constant (exchange stiffness constant) in Co$_2$MnSi, which is found to be $A=2.35pm0.1$ $mu$erg/cm ($D=575pm20$ meV AA$^2$), a value comparable to the value of the exchange constant of Co.
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