No Arabic abstract
The research on layered van der Waals (vdW) magnets is rapidly progressing owing to exciting fundamental science and potential applications. In bulk crystal form, CrCl3 is a vdW antiferromagnet with in-plane ferromagnetic ordering below 17 K, and CrI3 is a vdW ferromagnet below 61 K. Here, we report on the electron spin resonance (ESR) properties of CrCl3 and CrI3 single crystals upon photo-excitation in the visible range. We noticed remarkable changes in the ESR spectra upon illumination. In the case of CrCl3, at 10 K, the ESR signal is shifted from g = 1.492 (dark) to 1.661 (light), line width increased from 376 to 506 Oe, and the signal intensity is reduced by 1.5 times. Most interestingly, the observed change in the signal intensity is reversible when the light is cycled on/off. We observed almost no change in the ESR spectral parameters in the paramagnetic phase (>20 K) upon illumination. Upon photo-excitation of CrI3, the ESR signal intensity is reduced by 1.9 times; the g-value increased from 1.956 to 1.990; the linewidth increased from 1170 to 1260 Oe at 60 K. These findings are discussed by taking into account the skin depth, the slow relaxation mechanism and the appearance of low-symmetry fields at the photo-generated Cr2+ Jahn-Teller centers. Such an increase in the g-value as a result of photo-generated Cr2+ ions is further supported by our many-body wavefunction calculations. This work has the potential to extend to monolayer vdWs magnets by combining ESR spectroscopy with optical excitation and detection.
The recent experimental discovery of intrinsic ferromagnetism in single-layer CrI3 opens a new avenue to low-dimensional spintronics. However, the low Curie temperature Tc=45 K is still a large obstacle to its realistic device application. In this work, we demonstrate that the Tc and magnetic moment of CrX3(X=Br, I) can be enhanced simultaneously by coupling them to buckled two-dimensional Mene (M=Si, Ge) to form magnetic van der Waals (vdW) heterostructures. Our first-principles calculations reveal that n-doping of CrX3, induced by a significant spin-dependent interlayer charge transfer from Mene, is responsible for its drastic enhancement of Tc and magnetic moment. Furthermore, the diversified electronic properties including halfmetallicity and semi-conductivity with configuration dependent energy gap are also predicted in this novel vdW heterostructure, implying their broad potential applications in spintronics. Our study suggests that the vdW engineering may be an efficient way to tune the magnetic properties of 2D magnets, and the Mene_CrX3 magnetic vdW heterostructures are wonderful candidates in spintronics and nanoelectronics device.
Superatomic crystals are composed of discrete modular clusters that emulate the role of atoms in traditional atomic solids$^{1-4}$. Owing to their unique hierarchical structures, these materials are promising candidates to host exotic phenomena, such as superconductivity and magnetism that can be revealed through doping$^{5-10}$. Low-dimensional superatomic crystals hold great promise as electronic components$^{11,12}$, enabling these properties to be applied to nanocircuits, but the impact of doping in such compounds remains unexplored. Here we report the electrical transport properties of Re$_6$Se$_8$Cl$_2$, a two-dimensional superatomic semiconductor$^{13,14}$. Using an in situ current annealing technique, we find that this compound can be n-doped through Cl dissociation, drastically altering the transport behaviour from semiconducting to metallic and giving rise to superconductivity below $sim$ 9 K. This work is the first example of superconductivity in a van der Waals (vdW) superatomic crystal; more broadly, it establishes a new chemical strategy to manipulate the electronic properties of vdW materials with labile ligands.
Antiferromagnets display enormous potential in spintronics owing to its intrinsic nature, including terahertz resonance, multilevel states, and absence of stray fields. Combining with the layered nature, van der Waals (vdW) antiferromagnets hold the promise in providing new insights and new designs in two-dimensional (2D) spintronics. The zero net magnetic moments of vdW antiferromagnets strengthens the spin stability, however, impedes the correlation between spin and other excitation elements, like excitons. Such coupling is urgently anticipated for fundamental magneto-optical studies and potential opto-spintronic devices. Here, we report an ultra-sharp excitonic emission with excellent monochromaticity in antiferromagnetic nickel phosphorus trisulfides (NiPS3) from bulk to atomically thin flakes. We prove that the linear polarization of the excitonic luminescence is perpendicular to the ordered spin orientation in NiPS3. By applying an in-plane magnetic field to alter the spin orientation, we further manipulate the excitonic emission polarization. Such strong correlation between exciton and spins provides new insights for the study of magneto-optics in 2D materials, and hence opens a path for developing opto-spintronic devices and antiferromagnet-based quantum information technologies.
Two-dimensional (2D) crystals have renewed opportunities in design and assembly of artificial lattices without the constraints of epitaxy. However, the lack of thickness control in exfoliated van der Waals (vdW) layers prevents realization of repeat units with high fidelity. Recent availability of uniform, wafer-scale samples permits engineering of both electronic and optical dispersions in stacks of disparate 2D layers with multiple repeating units. We present optical dispersion engineering in a superlattice structure comprised of alternating layers of 2D excitonic chalcogenides and dielectric insulators. By carefully designing the unit cell parameters, we demonstrate > 90 % narrowband absorption in < 4 nm active layer excitonic absorber medium at room temperature, concurrently with enhanced photoluminescence in cm2 samples. These superlattices show evidence of strong light-matter coupling and exciton-polariton formation with geometry-tunable coupling constants. Our results demonstrate proof of concept structures with engineered optical properties and pave the way for a broad class of scalable, designer optical metamaterials from atomically-thin layers.
Low temperature magnetization of CrI3, CrSiTe3 and CrGeTe3 single crystals were systematically studied. Based on the temperature dependence of extrapolated spontaneous magnetization from magnetic isotherms measured at different temperatures, the spin stiffness constant (D) and spin excitation gap ($Delta$) were extracted according to Blochs law. For spin stiffness, D is estimated to be 27${pm}$6 meV $r{A}^2$, 20${pm}$3 meV $r{A}^2$ and 38${pm}$7 meV $r{A}^2$ for CrI3, CrSiTe3 and CrGeTe3 respectively. Spin excitation gaps determined via Blochs formulation have larger error bars yielding 0.59${pm}$0.34 meV (CrI3), 0.37${pm}$0.22 meV (CrSiTe3) and 0.28${pm}$0.19 meV (CrGeTe3). Among all three studied compounds, larger spin stiffness value leads to higher ferromagnetic transition temperature.