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Register a new userThe Coulomb impurity in 2D materials with strong spin-orbit interaction
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We show that the spin-orbit interaction (SOI) produced by the Coulomb fields of charged impurities provides an efficient mechanism for the bound states formation. The mechanism can be realized in 2D materials with sufficiently strong Rashba SOI provided that the impurity locally breaks the structure inversion symmetry in the direction normal to the layer.
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In layered semiconductors with spin-orbit interaction (SOI) a persistent spin helix (PSH) state with suppressed spin relaxation is expected if the strengths of the Rashba and Dresselhaus SOI terms, alpha and beta, are equal. Here we demonstrate gate control and detection of the PSH in two-dimensional electron systems with strong SOI including terms cubic in momentum. We consider strain-free InGaAs/InAlAs quantum wells and first determine alpha/beta ~ 1 for non-gated structures by measuring the spin-galvanic and circular photogalvanic effects. Upon gate tuning the Rashba SOI strength in a complementary magneto-transport experiment, we then monitor the complete crossover from weak antilocalization via weak localization to weak antilocalization, where the emergence of weak localization reflects a PSH type state. A corresponding numerical analysis reveals that such a PSH type state indeed prevails even in presence of strong cubic SOI, however no longer at alpha = beta.
The Wigner-crystal phase of two-dimensional electrons interacting via the Coulomb repulsion and subject to a strong Rashba spin-orbit coupling is investigated. For low enough electronic densities the spin-orbit band splitting can be larger than the zero-point energy of the lattice vibrations. Then the degeneracy of the lower subband results in a spontaneous symmetry breaking of the vibrational ground state. The $60^{circ}-$rotational symmetry of the triangular (spin-orbit coupling free) structure is lost, and the unit cell of the new lattice contains two electrons. Breaking the rotational symmetry also leads to a (slight) squeezing of the underlying triangular lattice.
Topological materials have attracted considerable experimental and theoretical attention. They exhibit strong spin-orbit coupling both in the band structure (intrinsic) and in the impurity potentials (extrinsic), although the latter is often neglected. Here we discuss weak localization and antilocalization of massless Dirac fermions in topological insulators and massive Dirac fermions in Weyl semimetal thin films taking into account both intrinsic and extrinsic spin-orbit interactions. The physics is governed by the complex interplay of the chiral spin texture, quasiparticle mass, and scalar and spin-orbit scattering. We demonstrate that terms linear in the extrinsic spin-orbit scattering are generally present in the Bloch and momentum relaxation times in all topological materials, and the correction to the diffusion constant is linear in the strength of the extrinsic spin-orbit. In TIs, which have zero quasiparticle mass, the terms linear in the impurity spin-orbit coupling lead to an observable density dependence in the weak antilocalization correction. They produce substantial qualitative modifications to the magnetoconductivity, differing greatly from the conventional HLN formula traditionally used in experimental fits, which predicts a crossover from weak localization to antilocalization as a function of the extrinsic spin-orbit strength. In contrast, our analysis reveals that topological insulators always exhibit weak antilocalization. In WSM thin films having intermediate to large values of the quasiparticle mass extrinsic spin-orbit scattering strongly affects the boundary of the weak localization to antilocalization transition. We produce a complete phase diagram for this transition as a function of the mass and spin-orbit scattering strength. We discuss implications for experiments and provide a brief comparison with transition metal dichalcogenides.
Kondo-type zero-bias anomalies have been frequently observed in quantum dots occupied by two electrons and attributed to a spin-triplet configuration that may become stable under particular circumstances. Conversely, zero-bias anomalies have been so far quite elusive when quantum dots are occupied by an even number of electrons greater than two, even though a spin-triplet configuration is more likely to be stabilized there than for two electrons. We propose as an origin of this phenomenon the spin-orbit interaction, and we show how it profoundly alters the conventional Kondo screening scenario in the simple case of a laterally confined quantum dot with four electrons.
Spin-orbit qubit (SOQ) is the dressed spin by the orbital degree of freedom through a strong spin-orbit coupling. We show that Coulomb interaction between two electrons in quantum dots located separately in two nanowires can efficiently induce quantum entanglement between two SOQs. The physical mechanism to achieve such quantum entanglement is based on the feasibility of the SOQ responding to the external electric field via an intrinsic electric dipole spin resonance.
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