No Arabic abstract
Topological materials have attracted considerable experimental and theoretical attention. They exhibit strong spin-orbit coupling both in the band structure (intrinsic) and in the impurity potentials (extrinsic), although the latter is often neglected. Here we discuss weak localization and antilocalization of massless Dirac fermions in topological insulators and massive Dirac fermions in Weyl semimetal thin films taking into account both intrinsic and extrinsic spin-orbit interactions. The physics is governed by the complex interplay of the chiral spin texture, quasiparticle mass, and scalar and spin-orbit scattering. We demonstrate that terms linear in the extrinsic spin-orbit scattering are generally present in the Bloch and momentum relaxation times in all topological materials, and the correction to the diffusion constant is linear in the strength of the extrinsic spin-orbit. In TIs, which have zero quasiparticle mass, the terms linear in the impurity spin-orbit coupling lead to an observable density dependence in the weak antilocalization correction. They produce substantial qualitative modifications to the magnetoconductivity, differing greatly from the conventional HLN formula traditionally used in experimental fits, which predicts a crossover from weak localization to antilocalization as a function of the extrinsic spin-orbit strength. In contrast, our analysis reveals that topological insulators always exhibit weak antilocalization. In WSM thin films having intermediate to large values of the quasiparticle mass extrinsic spin-orbit scattering strongly affects the boundary of the weak localization to antilocalization transition. We produce a complete phase diagram for this transition as a function of the mass and spin-orbit scattering strength. We discuss implications for experiments and provide a brief comparison with transition metal dichalcogenides.
We study the spin-orbit interaction (SOI) in InAs/ GaSb and InAs quantum wells. We show through temperature- and gate-dependent magnetotransport measurements of weak antilocalization that the dominant spin-orbit relaxation mechanism in our low-mobility heterostructures is Elliott-Yafet and not Dyakonov-Perel in the form of the Rashba or Dresselhaus SOI as previously suggested. We compare our findings with recent work on this material system and show that the SOI length lies within the same range. The SOI length may be controlled using an electrostatic gate, opening up prospects for developing spintronic applications.
We show that the spin-orbit interaction (SOI) produced by the Coulomb fields of charged impurities provides an efficient mechanism for the bound states formation. The mechanism can be realized in 2D materials with sufficiently strong Rashba SOI provided that the impurity locally breaks the structure inversion symmetry in the direction normal to the layer.
Topological insulators (TI) are a new class of quantum materials with insulating bulk enclosed by topologically protected metallic boundaries. The surface states of three-dimensional TIs have spin helical Dirac structure, and are robust against time reversal invariant perturbations. This extraordinary property is notably exemplified by the absence of backscattering by nonmagnetic impurities and the weak antilocalization (WAL) of Dirac fermions. Breaking the time reversal symmetry (TRS) by magnetic element doping is predicted to create a variety of exotic topological magnetoelectric effects. Here we report transport studies on magnetically doped TI Cr-Bi2Se3. With increasing Cr concentration, the low temperature electrical conduction exhibits a characteristic crossover from WAL to weak localization (WL). In the heavily doped regime where WL dominates at the ground state, WAL reenters as temperature rises, but can be driven back to WL by strong magnetic field. These complex phenomena can be explained by a unified picture involving the evolution of Berry phase with the energy gap opened by magnetic impurities. This work demonstrates an effective way to manipulate the topological transport properties of the TI surface states by TRS-breaking perturbations.
The quantum correction to electrical conductivity is studied on the basis of two-dimensional Wolff Hamiltonian, which is an effective model for a spin-orbit coupled (SOC) lattice system. It is shown that weak anti-localization (WAL) arises in SOC lattices, although its mechanism and properties are different from the conventional WAL in normal metals with SOC impurities. The interband SOC effect induces the contribution from the interband singlet Cooperon, which plays a crucial role for WAL in the SOC lattice. It is also shown that there is a crossover from WAL to weak localization in SOC lattices when the Fermi energy or band gap changes. The implications of the present results to Bi-Sb alloys and PbTe under pressure are discussed.
Tellurium (Te) has attracted great research interest due to its unique crystal structure since 1970s. However, the conduction band of Te is rarely studied experimentally because of the intrinsic p-type nature of Te crystal. By atomic layer deposited dielectric doping technique, we are able to access the conduction band transport properties of Te in a controlled fashion. In this paper, we report on a systematic study of weak-antilocalization (WAL) effect in n-type two-dimensional (2D) Te films. We find that the WAL agrees well with Iordanskii, Lyanda-Geller, and Pikus (ILP) theory. The gate and temperature dependent WAL reveals that Dyakonov-Perel (DP) mechanism is dominant for spin relaxation and phase relaxation is governed by electron-electron (e-e) interaction. Large phase coherence length near 600nm at T=1K is obtained, together with gate tunable spin-orbit interaction (SOI). Transition from weak-localization (WL) to weak-antilocalization (WAL) depending on gate bias is also observed. These results demonstrate that newly developed solution-based synthesized Te films provide a new controllable strong SOI 2D semiconductor with high potential for spintronic applications.