Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userReview on ferroelectric/polar metals
83
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
The possibility of reconciliation between seemingly mutually exclusive properties in one system can not only lead to theoretical breakthroughs but also potential novel applications. The research on the coexistence of two purportedly contra-indicated properties, ferroelectricity/polarity and conductivity, proposed by Anderson and Blount over 50 years ago was recently revitalized by the discovery of the first unambiguous polar metal LiOsO3 and further fueled by the demonstration of the first switchable ferroelectric metal WTe2. In this review, we first discuss the reasons why the coexistence of ferroelectricity/polarity and conductivity have been deemed incompatible, followed by a review on the history of ferroelectric/polar metals. Secondly, we review the important milestones along with the corresponding mechanisms for the ferroelectric/polar metallic phases in these materials. Thirdly, we summarize the design approaches for ferroelectric/polar metals. Finally, we discuss the future prospects and potential applications of ferroelectric/polar metals.
rate research
Read More
Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are mutually exclusive in nature. Here, we report the coexistence of two seemingly mutually exclusive properties-polarity and two-dimensional conductivity-in ferroelectric Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin films at the LaAlO$_3$/Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ interface at room temperature. The polarity of a ~3.2 nm Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin film is preserved with a two-dimensional mobile carrier density of ~0.05 electron per unit cell. We show that the electronic reconstruction resulting from the competition between the built-in electric field of LaAlO$_3$ and the polarization of Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ is responsible for this unusual two-dimensional conducting polar phase. The general concept of exploiting mutually exclusive properties at oxide interfaces via electronic reconstruction may be applicable to other strongly-correlated oxide interfaces, thus opening windows to new functional nanoscale materials for applications in novel nanoelectronics.
An oxide heterostructure made of manganite bilayers and ferroelectric perovskites is predicted to lead to the full control of magnetism when switching the ferroelectric polarizations. By using asymmetric polar interfaces in the superlattices, more electrons occupy the Mn layer at the $n$-type interface side than at the $p$-type side. This charge disproportionation can be enhanced or suppressed by the ferroelectric polarization. Quantum model and density functional theory calculations reach the same conclusion: a ferromagnetic-ferrimagnetic phase transition with maximal change $>90%$ of the total magnetization can be achieved by switching the polarizations direction. This function is robust and provides full control of the magnetizations magnitude, not only its direction, via electrical methods.
We report a complementary metal oxide semiconductor (CMOS) technology compatible ferroelectric tunnel junction memristor grown directly on top of a Silicon substrate using a scandium doped aluminum nitride as the ferroelectric layer.
Controlling magnetism using voltage is highly desired for applications, but remains challenging due to fundamental contradiction between polarity and magnetism. Here we propose a mechanism to manipulate magnetic domain walls in ferrimagnetic or ferromagnetic multiferroics using electric field. Different from those studies based on static domain-level couplings, here the magnetoelectric coupling relies on the collaborative spin dynamics around domain walls. Accompanying the reversal of spin chirality driven by polarization switching, a rolling-downhill-like motion of domain wall is achieved at the nanoscale, which tunes the magnetization locally. Our mechanism opens an alternative route to pursuit practical and fast converse magnetoelectric functions via spin dynamics.
We have studied the longitudinal spin Seebeck effect in a polar antiferromagnet $alpha$-Cu$_{2}$V$_{2}$O$_{7}$ in contact with a Pt film. Below the antiferromagnetic transition temperature of $alpha$-Cu$_{2}$V$_{2}$O$_{7}$, spin Seebeck voltages whose magnetic field dependence is similar to that reported in antiferromagnetic MnF$_{2}$$mid$Pt bilayers are observed. Though a small weak-ferromagnetic moment appears owing to the Dzyaloshinskii-Moriya interaction in $alpha$-Cu$_{2}$V$_{2}$O$_{7}$, the magnetic field dependence of spin Seebeck voltages is found to be irrelevant to the weak ferromagnetic moments. The dependences of the spin Seebeck voltages on magnetic fields and temperature are analyzed by a magnon spin current theory. The numerical calculation of spin Seebeck voltages using magnetic parameters of $alpha$-Cu$_{2}$V$_{2}$O$_{7}$ determined by previous neutron scattering studies reveals that the magnetic-field and temperature dependences of the spin Seebeck voltages for $alpha$-Cu$_{2}$V$_{2}$O$_{7}$$mid$Pt are governed by the changes in magnon lifetimes with magnetic fields and temperature.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
